JPS6432629A - Etching device - Google Patents

Etching device

Info

Publication number
JPS6432629A
JPS6432629A JP18753987A JP18753987A JPS6432629A JP S6432629 A JPS6432629 A JP S6432629A JP 18753987 A JP18753987 A JP 18753987A JP 18753987 A JP18753987 A JP 18753987A JP S6432629 A JPS6432629 A JP S6432629A
Authority
JP
Japan
Prior art keywords
etching
section
etched
resist
observed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18753987A
Other languages
Japanese (ja)
Inventor
Hideo Sunami
Sadayuki Okudaira
Yoshifumi Kawamoto
Tokuo Kure
Masao Tamura
Naoji Yoshihiro
Sukeyoshi Tsunekawa
Kiyohiko Funakoshi
Toru Kaga
Shigeru Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18753987A priority Critical patent/JPS6432629A/en
Publication of JPS6432629A publication Critical patent/JPS6432629A/en
Pending legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To detect the completion of etching by removing a resist in extremely one part of a wafer during dry etching and detecting SEM observation and an open-circuit and a short circuit. CONSTITUTION:Fixed overetching is conducted on the basis of the specified time or the time of the monitor of the end point of etching in an etching section 1, a material to be etched is transferred to a resist removing section 2 through a connecting section 4 without breaking a vacuum, and only the section of an area sufficient for observing a resist in a predetermined one part in a wafer is gotten rid of. The shape of a thin-film to be etched is observed with an observing section 3 of a scanning electron microscope (SEM), etc., When potential is applied to the material to be etched and the potential image of the SEM is observed, the so-called etching remainder is generated, and the short circuit of adjacent wirings is detected. When etching remainder is confirmed, etching is performed again. The resist is taken off again, and the material to be etched is observed.
JP18753987A 1987-07-29 1987-07-29 Etching device Pending JPS6432629A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18753987A JPS6432629A (en) 1987-07-29 1987-07-29 Etching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18753987A JPS6432629A (en) 1987-07-29 1987-07-29 Etching device

Publications (1)

Publication Number Publication Date
JPS6432629A true JPS6432629A (en) 1989-02-02

Family

ID=16207858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18753987A Pending JPS6432629A (en) 1987-07-29 1987-07-29 Etching device

Country Status (1)

Country Link
JP (1) JPS6432629A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263769A (en) * 1994-03-24 1995-10-13 Agency Of Ind Science & Technol Method and device for forming josephson junction
JPH1154456A (en) * 1997-07-25 1999-02-26 Samsung Electron Co Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07263769A (en) * 1994-03-24 1995-10-13 Agency Of Ind Science & Technol Method and device for forming josephson junction
JPH1154456A (en) * 1997-07-25 1999-02-26 Samsung Electron Co Ltd Manufacture of semiconductor device

Similar Documents

Publication Publication Date Title
NO930680L (en) PROCEDURE AND DEVICE FOR AA REMOVAL DAMAGE ALSO UNDER THE SURFACE IN SEMICONDUCTOR MATERIALS THROUGH PLASMA MEASUREMENT
EP0781976A3 (en) Method for measuring critical dimension of pattern on sample
EP0849586A3 (en) Detection of substances on surfaces and electrodes therefor
EP0328078A3 (en) Reactive ion etching apparatus
EP0855737A3 (en) Integrated processing for an etch module using a hard mask technique
JPS6432629A (en) Etching device
JPS5687666A (en) Plasma etching method
EP1211723A3 (en) Optimized metal fuse process in semiconductor device
JPS5670644A (en) Manufacture of semiconductor integrated circuit
JPS5625972A (en) Etching treatment by plasma
EP0926506A3 (en) Integrated circuit with latch up prevention during burn in testing
JPS5527686A (en) Projection eliminating device
JPS6415953A (en) Dry etching method
JPH01145816A (en) Wet etching
JPS58123880A (en) Plasma etching device
JPS6481229A (en) Manufacture of semiconductor device
JPS5587437A (en) Method of detecting completion of dry etching
JPS6446934A (en) Detection of quantity of etched surface of solid
JPH0312928A (en) Manufacturing device for semiconductor
KR920002198B1 (en) Semiconductor device
Broers et al. Nanolithography and direct exposure of SiO2 layers
KR100641990B1 (en) Method of detecting not-open of hole using bright-field apparatus
Matsukawa et al. Charging Damage of Silicon-on-Insulator (SOI) Wafer Determined by Scanning Maxwell-Stress Microscopy
JPS5693319A (en) Manufacture of semiconductor device
Jager-Waldau et al. Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes