JPS6431412A - Formation of ohmic contact electrode layer and device therefor - Google Patents

Formation of ohmic contact electrode layer and device therefor

Info

Publication number
JPS6431412A
JPS6431412A JP18744187A JP18744187A JPS6431412A JP S6431412 A JPS6431412 A JP S6431412A JP 18744187 A JP18744187 A JP 18744187A JP 18744187 A JP18744187 A JP 18744187A JP S6431412 A JPS6431412 A JP S6431412A
Authority
JP
Japan
Prior art keywords
contact
semiconductor substrate
heating body
metallic layer
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18744187A
Other languages
Japanese (ja)
Other versions
JP2579490B2 (en
Inventor
Yasuaki Yamane
Masahiro Hirayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18744187A priority Critical patent/JP2579490B2/en
Publication of JPS6431412A publication Critical patent/JPS6431412A/en
Application granted granted Critical
Publication of JP2579490B2 publication Critical patent/JP2579490B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PURPOSE:To reduce contact resistance between a metallic layer and a semiconductor substrate as well as the distribution unevenness of the contact resistance, by causing a semiconductor substrate, which is contact-placed on a heating body and to which a metallic layer is attached, to be vacuum-attracted to the heating body side. CONSTITUTION:A semiconductor substrate 6 to which a metallic layer to form an ohmic contact electrode layer is attached is contact-placed on a placing place 12 of a heating body 11 with cylindrical rollers 26 from the upper position or from the position at a distance from the heating body 11. The cylindrical rollers 26 are received in striped grooves 27 of the heating body 11 and the semiconductor substrate 6 covers large number of inlet ports 29. Further, its substrate 6 is attracted by the placing plane 12 side of the heating body 11 through large number of the inlet ports 29 with the operation of a suction air pump 32 and is placed after coming closely into contact with the placing place 12 without having contact distribution unevenness very much. Under this state, the semiconductor substrate 6 is treated by heat. Then it can be heated at the prescribed temperature without having temperature distribution unevenness very much. As a result, contact-resistance can be lessened without having the distribution unevenness of contact-resistance very much between the metallic layer and the semiconductor substrate 6.
JP18744187A 1987-07-27 1987-07-27 Method for forming ohmic contact electrode layer and apparatus used therefor Expired - Lifetime JP2579490B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18744187A JP2579490B2 (en) 1987-07-27 1987-07-27 Method for forming ohmic contact electrode layer and apparatus used therefor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18744187A JP2579490B2 (en) 1987-07-27 1987-07-27 Method for forming ohmic contact electrode layer and apparatus used therefor

Publications (2)

Publication Number Publication Date
JPS6431412A true JPS6431412A (en) 1989-02-01
JP2579490B2 JP2579490B2 (en) 1997-02-05

Family

ID=16206117

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18744187A Expired - Lifetime JP2579490B2 (en) 1987-07-27 1987-07-27 Method for forming ohmic contact electrode layer and apparatus used therefor

Country Status (1)

Country Link
JP (1) JP2579490B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267309A (en) * 1992-03-19 1993-10-15 Ngk Insulators Ltd Heating apparatus
US5923427A (en) * 1997-07-10 1999-07-13 Banner Engineering Corporation Optical triangulation distance sensing system and method using a position sensitive detector and an automatic power controlled light source
US6122039A (en) * 1998-10-28 2000-09-19 Banner Engineering Corp. Method and apparatus to detect and report object displacement utilizing optical triangulation principles

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05267309A (en) * 1992-03-19 1993-10-15 Ngk Insulators Ltd Heating apparatus
US5923427A (en) * 1997-07-10 1999-07-13 Banner Engineering Corporation Optical triangulation distance sensing system and method using a position sensitive detector and an automatic power controlled light source
US6122039A (en) * 1998-10-28 2000-09-19 Banner Engineering Corp. Method and apparatus to detect and report object displacement utilizing optical triangulation principles

Also Published As

Publication number Publication date
JP2579490B2 (en) 1997-02-05

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