JPS6429836U - - Google Patents
Info
- Publication number
- JPS6429836U JPS6429836U JP12420087U JP12420087U JPS6429836U JP S6429836 U JPS6429836 U JP S6429836U JP 12420087 U JP12420087 U JP 12420087U JP 12420087 U JP12420087 U JP 12420087U JP S6429836 U JPS6429836 U JP S6429836U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- melting point
- high melting
- point metal
- wiring layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims 2
- 238000002844 melting Methods 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420087U JPS6429836U (enExample) | 1987-08-13 | 1987-08-13 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12420087U JPS6429836U (enExample) | 1987-08-13 | 1987-08-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6429836U true JPS6429836U (enExample) | 1989-02-22 |
Family
ID=31373723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12420087U Pending JPS6429836U (enExample) | 1987-08-13 | 1987-08-13 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6429836U (enExample) |
-
1987
- 1987-08-13 JP JP12420087U patent/JPS6429836U/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6429836U (enExample) | ||
| JPS63302538A (ja) | 半導体装置 | |
| JPS58163A (ja) | キヤパシタの製造方法 | |
| JPH0224541U (enExample) | ||
| JPS6186943U (enExample) | ||
| JPS59132661U (ja) | 混成集積回路用絶縁基板 | |
| JPH02113566A (ja) | 半導体集積回路 | |
| JPH0183340U (enExample) | ||
| JPS5818345U (ja) | 耐マイグレ−ション性Ａｌ配線 | |
| JPS58191450A (ja) | 多層配線構造 | |
| JPH01162240U (enExample) | ||
| JPS6242243U (enExample) | ||
| JPS584946A (ja) | 埋込配線層の形成法 | |
| JPH0310531U (enExample) | ||
| JPS63164246U (enExample) | ||
| JPS5853448U (ja) | 温度ヒユ−ズ | |
| JPS625657U (enExample) | ||
| JPS6282763U (enExample) | ||
| JPH0465459U (enExample) | ||
| JPS60169863U (ja) | 回路基板 | |
| JPH0267730A (ja) | 半導体装置 | |
| JPS61131829U (enExample) | ||
| JPS5840848U (ja) | 半導体装置 | |
| JPS6240852U (enExample) | ||
| JPS6298263U (enExample) |