JPS6428369A - Magnetron sputtering device - Google Patents
Magnetron sputtering deviceInfo
- Publication number
- JPS6428369A JPS6428369A JP18397287A JP18397287A JPS6428369A JP S6428369 A JPS6428369 A JP S6428369A JP 18397287 A JP18397287 A JP 18397287A JP 18397287 A JP18397287 A JP 18397287A JP S6428369 A JPS6428369 A JP S6428369A
- Authority
- JP
- Japan
- Prior art keywords
- target
- substrate
- gas
- torr
- low pressure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To provide a titled device with which a good step coverage characteristic is obtd. without decreasing the speed of film formation by localizing an atmosphere gas necessary for a magnetron state only near to the target and maintaining a low pressure except near the target. CONSTITUTION:The atmosphere gas of Ar, etc., is localized (1X10<-2>Torr) near the target 13 by using a gas introducing port A16 and a gas discharge port A17. The magnetron state is created by the magnetic field by an electromagnet or solenoid 15 on the rear side of the target 13 and the DC alternating magnetic field by the electric field between a cathode 14 and an anode 12. On the other hand, the low pressure (1X10<-4>Torr) can be maintained between a substrate 11 and the target 13 by a gas discharge port B19. Since the distance between the substrate 11 and the target 13 is substantially long as compared to the thickness of the plasma region near the target 13, the sputtering particles arriving at the substrate arrive perpendicularly at the substrate 11. The method of this invention is thus highly effective in improving the step coverage characteristic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18397287A JPS6428369A (en) | 1987-07-23 | 1987-07-23 | Magnetron sputtering device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18397287A JPS6428369A (en) | 1987-07-23 | 1987-07-23 | Magnetron sputtering device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6428369A true JPS6428369A (en) | 1989-01-30 |
Family
ID=16145050
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18397287A Pending JPS6428369A (en) | 1987-07-23 | 1987-07-23 | Magnetron sputtering device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6428369A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143521A (en) * | 1988-11-25 | 1990-06-01 | Tokyo Electron Ltd | Sputtering method |
-
1987
- 1987-07-23 JP JP18397287A patent/JPS6428369A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02143521A (en) * | 1988-11-25 | 1990-06-01 | Tokyo Electron Ltd | Sputtering method |
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