JPS6428362A - Method and device for forming thin insulating film - Google Patents

Method and device for forming thin insulating film

Info

Publication number
JPS6428362A
JPS6428362A JP18261987A JP18261987A JPS6428362A JP S6428362 A JPS6428362 A JP S6428362A JP 18261987 A JP18261987 A JP 18261987A JP 18261987 A JP18261987 A JP 18261987A JP S6428362 A JPS6428362 A JP S6428362A
Authority
JP
Japan
Prior art keywords
substrate
cathodes
alloy
negative voltage
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18261987A
Other languages
Japanese (ja)
Inventor
Tsutomu Ikeda
Hiroshi Hirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kobe Steel Ltd
Original Assignee
Kobe Steel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kobe Steel Ltd filed Critical Kobe Steel Ltd
Priority to JP18261987A priority Critical patent/JPS6428362A/en
Publication of JPS6428362A publication Critical patent/JPS6428362A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C23C14/325—Electric arc evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To control a negative voltage by a high-frequency self-bias and to efficiently obtain a hard thin insulating film having high purity and high adhesion to a base material by providing metal (alloy) cathodes which are evaporation sources facing a substrate to a position superposed on an arc plasma region and supplying a high-frequency electric power to the substrate. CONSTITUTION:The above-mentioned metal (alloy) cathodes 2a-2c facing the substrate 4 impressed with the negative voltage are provided in a vacuum vessel 1 and arc discharges are generated between the cathodes and the substrate. Since the cathodes 2a-2c are disposed in the position superposed on the arc plasma region formed over the substrate 4, the evaporated metal (alloy) vapor is ionized before arriving at the glow discharge region near the substrate and the thin film is formed on the substrate 4. The inside of the vacuum vessel is maintained in <=5X10<-2>Torr reactive atmosphere during the above-mentioned operation. The high-frequency electric power to be supplied to the substrate 4 is required to be controlled to >=0.5W/cm<2> and the negative voltage by the high-frequency self bias to <=1kV.
JP18261987A 1987-07-22 1987-07-22 Method and device for forming thin insulating film Pending JPS6428362A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18261987A JPS6428362A (en) 1987-07-22 1987-07-22 Method and device for forming thin insulating film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18261987A JPS6428362A (en) 1987-07-22 1987-07-22 Method and device for forming thin insulating film

Publications (1)

Publication Number Publication Date
JPS6428362A true JPS6428362A (en) 1989-01-30

Family

ID=16121456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18261987A Pending JPS6428362A (en) 1987-07-22 1987-07-22 Method and device for forming thin insulating film

Country Status (1)

Country Link
JP (1) JPS6428362A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05165218A (en) * 1991-12-16 1993-07-02 Nippon Zeon Co Ltd Negative photosensitive resin composition
JP2008533686A (en) * 2005-03-24 2008-08-21 エルリコン トレーディング アクチェンゲゼルシャフト，トリューブバハ How to operate a pulsed arc source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05165218A (en) * 1991-12-16 1993-07-02 Nippon Zeon Co Ltd Negative photosensitive resin composition
JP2008533686A (en) * 2005-03-24 2008-08-21 エルリコン トレーディング アクチェンゲゼルシャフト，トリューブバハ How to operate a pulsed arc source

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