WO2000038213A3 - Physical vapor deposition of semiconducting and insulating materials - Google Patents
Physical vapor deposition of semiconducting and insulating materials Download PDFInfo
- Publication number
- WO2000038213A3 WO2000038213A3 PCT/US1999/030476 US9930476W WO0038213A3 WO 2000038213 A3 WO2000038213 A3 WO 2000038213A3 US 9930476 W US9930476 W US 9930476W WO 0038213 A3 WO0038213 A3 WO 0038213A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- target
- substrate
- bias
- chamber
- physical vapor
- Prior art date
Links
- 238000005240 physical vapour deposition Methods 0.000 title abstract 2
- 239000011810 insulating material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 3
- 230000008021 deposition Effects 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 238000006386 neutralization reaction Methods 0.000 abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- -1 argon ions Chemical class 0.000 abstract 1
- 229910052454 barium strontium titanate Inorganic materials 0.000 abstract 1
- 230000005591 charge neutralization Effects 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 238000005546 reactive sputtering Methods 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 230000001360 synchronised effect Effects 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/345—Applying energy to the substrate during sputtering using substrate bias
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3444—Associated circuits
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention provides an apparatus for depositing semiconducting, insulating, and particularly, high dielectric constant (HDC) material, such as barium strontium titanate, on a substrate through reactive sputtering. The apparatus comprises a physical vapor deposition chamber having an asymmetric bipolar pulsed direct current power source supplying a first bias to a target and a second bias to the substrate support member in the chamber. The pulsed direct current power source supplies an electrical waveform comprising a negative deposition voltage that attracts the argon ions to cause sputtering from the target and a reverse small positive neutralization voltage to cause charge neutralisation of the target that eliminates arcing and micro-arcing on the target surface. Preferably, the first bias is synchronized with the second bias for the deposition period and the neutralization period. A floating-ground shield surrounds the processing region between the target and the substrate. A first gast inlet introduces a gas for the plasma through the top portion of the chamber, and a second gas inlet introduces a reaction gas adjacent the substrate surface to react with the sputtered material to form the HDC film on the substrate.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020017007925A KR20010089674A (en) | 1998-12-21 | 1999-12-20 | Physical vapor deposition of semiconducting and insulating materials |
| JP2000590192A JP2002533574A (en) | 1998-12-21 | 1999-12-20 | Physical vapor deposition equipment for semiconductive and insulating materials |
| EP99968156A EP1141997A2 (en) | 1998-12-21 | 1999-12-20 | Physical vapor deposition of semiconducting and insulating materials |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US21918798A | 1998-12-21 | 1998-12-21 | |
| US09/219,187 | 1998-12-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2000038213A2 WO2000038213A2 (en) | 2000-06-29 |
| WO2000038213A3 true WO2000038213A3 (en) | 2000-09-14 |
Family
ID=22818241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/US1999/030476 WO2000038213A2 (en) | 1998-12-21 | 1999-12-20 | Physical vapor deposition of semiconducting and insulating materials |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1141997A2 (en) |
| JP (1) | JP2002533574A (en) |
| KR (1) | KR20010089674A (en) |
| TW (1) | TW454245B (en) |
| WO (1) | WO2000038213A2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6461483B1 (en) * | 2000-03-10 | 2002-10-08 | Applied Materials, Inc. | Method and apparatus for performing high pressure physical vapor deposition |
| KR100417112B1 (en) * | 2001-08-21 | 2004-02-05 | (주) 브이에스아이 | A Pulse Type Metal Plasma Ion Source Generating Device |
| KR101116105B1 (en) * | 2004-05-21 | 2012-02-13 | 주식회사 케이티 | Method for fabricating a titanium oxide film for film capacitor |
| KR100784381B1 (en) * | 2004-07-23 | 2007-12-11 | 삼성전자주식회사 | Deposition apparatus and method |
| TWI554630B (en) | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | Deposition apparatus and methods to reduce deposition asymmetry |
| US20220056571A1 (en) * | 2019-11-28 | 2022-02-24 | Ulvac, Inc. | Film Forming Method |
| CN117203364A (en) * | 2021-03-02 | 2023-12-08 | 应用材料公司 | Pulsed DC power for deposition of films |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3700633C1 (en) * | 1987-01-12 | 1988-05-26 | Reinar Dr Gruen | Method and device for the gentle coating of electrically conductive objects by means of plasma |
| EP0818803A2 (en) * | 1996-07-10 | 1998-01-14 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
| US5789071A (en) * | 1992-11-09 | 1998-08-04 | Northwestern University | Multilayer oxide coatings |
-
1999
- 1999-12-20 JP JP2000590192A patent/JP2002533574A/en not_active Withdrawn
- 1999-12-20 WO PCT/US1999/030476 patent/WO2000038213A2/en not_active Application Discontinuation
- 1999-12-20 KR KR1020017007925A patent/KR20010089674A/en not_active Application Discontinuation
- 1999-12-20 EP EP99968156A patent/EP1141997A2/en not_active Withdrawn
- 1999-12-21 TW TW088122549A patent/TW454245B/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3700633C1 (en) * | 1987-01-12 | 1988-05-26 | Reinar Dr Gruen | Method and device for the gentle coating of electrically conductive objects by means of plasma |
| US5789071A (en) * | 1992-11-09 | 1998-08-04 | Northwestern University | Multilayer oxide coatings |
| EP0818803A2 (en) * | 1996-07-10 | 1998-01-14 | Applied Materials, Inc. | Electrically floating shield in a plasma reactor |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000038213A2 (en) | 2000-06-29 |
| TW454245B (en) | 2001-09-11 |
| EP1141997A2 (en) | 2001-10-10 |
| KR20010089674A (en) | 2001-10-08 |
| JP2002533574A (en) | 2002-10-08 |
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