JPS642191B2 - - Google Patents
Info
- Publication number
- JPS642191B2 JPS642191B2 JP28312785A JP28312785A JPS642191B2 JP S642191 B2 JPS642191 B2 JP S642191B2 JP 28312785 A JP28312785 A JP 28312785A JP 28312785 A JP28312785 A JP 28312785A JP S642191 B2 JPS642191 B2 JP S642191B2
- Authority
- JP
- Japan
- Prior art keywords
- deposited film
- reaction vessel
- cvd method
- plasma
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 99
- 238000006243 chemical reaction Methods 0.000 claims description 81
- 239000002184 metal Substances 0.000 claims description 37
- 239000002994 raw material Substances 0.000 claims description 34
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 19
- 239000003989 dielectric material Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 92
- 239000007789 gas Substances 0.000 description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 description 17
- 239000011521 glass Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 108091008695 photoreceptors Proteins 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 210000000078 claw Anatomy 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- -1 Si * Chemical class 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 230000007847 structural defect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28312785A JPS62142784A (ja) | 1985-12-18 | 1985-12-18 | プラズマｃｖｄ法による堆積膜形成装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28312785A JPS62142784A (ja) | 1985-12-18 | 1985-12-18 | プラズマｃｖｄ法による堆積膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62142784A JPS62142784A (ja) | 1987-06-26 |
| JPS642191B2 true JPS642191B2 (cs) | 1989-01-13 |
Family
ID=17661577
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28312785A Granted JPS62142784A (ja) | 1985-12-18 | 1985-12-18 | プラズマｃｖｄ法による堆積膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62142784A (cs) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115537765B (zh) * | 2022-09-27 | 2024-07-12 | 盛吉盛(宁波)半导体科技有限公司 | 等离子体化学气相沉积装置和小尺寸沟槽填充方法 |
-
1985
- 1985-12-18 JP JP28312785A patent/JPS62142784A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62142784A (ja) | 1987-06-26 |
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