JPS642189B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a sputtering device, and particularly to a magnetron-type sputtering device in which an electric field and a magnetic field are orthogonal to each other.

[Technical background of the invention and its problems]

In recent years, magnetron sputtering equipment, which combines an electric field perpendicular to the target and a magnetic field perpendicular to the electric field, has been widely used because of its high sputtering speed, little heat damage to the treated surface, and good film quality. .

FIG. 8 shows an outline of a conventional magnetron sputtering device.
A disk-shaped magnet 2 is provided, each pole of which is arranged concentrically at a predetermined interval H, and the magnet 2 is arranged such that its center axis is separated from the center axis of the target 1 by a distance D. The target 1 is rotated eccentrically around the central axis of the target 1. Further, on the upper surface side of the target 1, a workpiece 3 is placed at a predetermined interval h.
A holder 4 is provided to fixedly support the above-mentioned members, and each of the above-mentioned members is housed in a vacuum container (not shown).

In the above sputtering apparatus, when sputtering the material of the target 1 onto the surface of the workpiece 3,
By eccentrically rotating the magnet 2 to uniformly scatter the material of the target 1, spatter is uniformly applied to the surface of the workpiece 3.
Further, the object 3 to be processed is not necessarily fixed, but may be rotated, revolved, or revolved as necessary.

The eccentric distance D of the magnet 2 is usually set so as to make the region where the film thickness distribution is constant as wide as possible.

However, in the case of the above-mentioned apparatus, since a uniform film thickness distribution area is secured over a wide area, the target 1
Even if the sputtering speed itself is high, the adhesion speed on the surface of the object 3 to be treated is low, and particularly when the surface area of the object to be treated is small, there is a problem in that the efficiency with respect to the sputtering speed is extremely reduced.

In addition, when various conditions change, such as when changing the distance between the object to be processed and the target to obtain the desired film quality, or when using a ferromagnetic target, the above-mentioned apparatus will not be able to maintain the uniformity of the film thickness distribution. There is a problem in that the value decreases significantly, and this is particularly noticeable in experimental equipment used under various conditions.

[Purpose of the invention]

The present invention has been made in view of the above points, and
It is an object of the present invention to provide a sputtering device that can always obtain an optimal film thickness distribution without reducing the sputtering speed.

[Summary of the invention]

In order to achieve the above object, the sputtering apparatus according to the present invention arranges a target in a vacuum container at a constant distance from the workpiece, and rotates a magnet arranged on the back side of the target with respect to the center of the target. In a sputtering apparatus that performs sputtering on the object to be treated while sputtering, a magnet mounting plate that rotates around an axis that coincides with the center of the target is disposed outside the vacuum vessel, and a magnet is attached to the upper surface of the sputtering apparatus. The vacuum container is characterized in that the distance between the center of the magnet and the center of rotation of the magnet mounting plate is adjustable, and a space is provided on the back side of the target for conducting water for cooling the target. The uniformity of the film thickness distribution is achieved by adjusting the mounting position of the magnet on the magnet mounting plate located outside the magnet.

[Embodiments of the invention]

Embodiments of the present invention will be described below with reference to FIGS. 1 to 7.

FIG. 1 shows a magnetron sputtering device according to the present invention, in which a target 1 made of a Co-Cr alloy is fixed to the upper surface of a support base 6 made of copper attached to the inside of a vacuum vessel 5. A space is formed between the support base 6 and the vacuum container 5, and the cooling efficiency of the target 1 is increased by conducting cooling water into this space. Further, a motor 7 is disposed on the outside of the vacuum container 5 so that its rotating shaft is positioned on the central axis of the target 1, and the shaft 8 of the motor 7 has an oblong mounting hole 9. One end of the magnet mounting plate 10 is fixed. The magnet 2 is attached to the magnet attachment plate 10 by screws passing through the attachment hole 9, and by changing the tightening position of the screw in the attachment hole 9, the magnet 2 can be attached to the target 1 of the magnet 2 relative to the central axis. The eccentric distance D can be adjusted.

In addition, Figures 3 to 5 show Ar in the vacuum container.
Under the conditions that the pressure is 5 × 10 ^-3 Torr, the sputtering power is 380 W, the distance between the workpiece and the target is 6.5 cm, and the diameter of the magnet is 11.5 cm, the eccentric distance D is calculated as D = 0 in Fig. 3. Figure 4 is D=7.5cm, 5th
The figures show the film thickness distribution when D = 7.0 cm. When the eccentric distance is 0, the film thickness between the center and the peripheral part of the object is significantly different, whereas when the magnet is This shows that a more uniform film thickness distribution can be obtained by making the film eccentric. Furthermore, as can be seen from FIGS. 4 and 5, the film thickness distribution can be changed by changing the eccentric distance, and therefore the desired film thickness distribution can be adjusted depending on the size of the workpiece. Obtainable.

Furthermore, Figure 6 shows the sputtering speed per unit power and unit time in the sputtering region where the film thickness distribution at various eccentric distances is 100±10% and 100±5%. The diameters of the range in which film thickness distributions of ±10% and 100±5% can be obtained are 8 cm (r = 4 cm) and 10 cm (r = 5 cm).
cm), the sputtering speed is 1.2 times and 1.3 times, respectively, depending on the size of the workpiece.
In other words, it is shown that the sputtering speed can be significantly increased by changing the eccentric distance when the film thickness range is small.

Furthermore, Fig. 7 shows the state of target erosion when sputtering is performed for a long time with an eccentric distance D of 7.5 cm, indicating that the target utilization efficiency is significantly increased compared to the conventional method. There is.

In addition, in order to reduce the influence of plasma and charged particles on the surface to be processed, when installing a mask, adjust the eccentric distance according to the dimensions and shape of the mask to ensure an appropriate film thickness distribution. Obtainable.

The present invention can also be applied to a sputtering device in which the distance between the target and the holder that holds the object to be processed or the object to be processed can be adjusted.

〔Effect of the invention〕

Since the present invention has the above-described configuration, by adjusting the mounting position of the magnet to the magnet mounting plate placed outside the vacuum container, an optimal film thickness distribution can be obtained under various conditions. Particularly when the area of the object to be treated is small, it is possible to ensure an appropriate film thickness distribution and also to improve the sputtering speed. Further, there is an effect that it is possible to improve the cooling efficiency of the target and the utilization efficiency of the target.

[Brief explanation of the drawing]

1 to 7 each show an embodiment of the present invention. FIG. 1 is a schematic diagram of the sputtering device, FIG. 2 is a perspective view of the motor, and FIGS.
5 and 5 are diagrams showing the film thickness distribution with respect to the eccentric distance of the magnet, FIG. 6 is a diagram showing the sputtering speed with respect to the sputtering area, FIG. 7 is an explanatory diagram showing the state of target erosion, and FIG. 8 1 is a schematic configuration diagram showing a conventional sputtering device. DESCRIPTION OF SYMBOLS 1... Target, 2... Magnet, 3... Processing object, 4... Holder, 5... Vacuum container, 6... Support stand, 7
...Motor, 8...Shaft, 9...Mounting hole, 10...Magnet mounting plate.

Claims (1)

[Claims] 1. A sputtering apparatus in which a target is placed in a vacuum container at a constant distance from the workpiece, and a magnet placed on the back side of the target is rotated around the center of the target to sputter the workpiece. In the apparatus, a magnet mounting plate is disposed outside the vacuum container and rotates around an axis that coincides with the center of the target, and a magnet is attached to the top surface thereof, and the center of the magnet and the rotation center of the magnet mounting plate are connected to each other. 1. A sputtering device characterized in that the distance between the sputtering device and the sputtering device is adjustable, and a space is provided on the back side of the target to conduct water for cooling the target.