JPS6418436A - Synthesizing method for cubic boron nitride single crystal - Google Patents
Synthesizing method for cubic boron nitride single crystalInfo
- Publication number
- JPS6418436A JPS6418436A JP17680087A JP17680087A JPS6418436A JP S6418436 A JPS6418436 A JP S6418436A JP 17680087 A JP17680087 A JP 17680087A JP 17680087 A JP17680087 A JP 17680087A JP S6418436 A JPS6418436 A JP S6418436A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- cubic boron
- borate
- temperature
- solvent substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
- B01J3/062—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies characterised by the composition of the materials to be processed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0605—Composition of the material to be processed
- B01J2203/0645—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/065—Composition of the material produced
- B01J2203/066—Boronitrides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2203/00—Processes utilising sub- or super atmospheric pressure
- B01J2203/06—High pressure synthesis
- B01J2203/0675—Structural or physico-chemical features of the materials processed
- B01J2203/068—Crystal growth
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17680087A JPS6418436A (en) | 1987-07-14 | 1987-07-14 | Synthesizing method for cubic boron nitride single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17680087A JPS6418436A (en) | 1987-07-14 | 1987-07-14 | Synthesizing method for cubic boron nitride single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6418436A true JPS6418436A (en) | 1989-01-23 |
Family
ID=16020062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17680087A Pending JPS6418436A (en) | 1987-07-14 | 1987-07-14 | Synthesizing method for cubic boron nitride single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6418436A (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160237558A1 (en) * | 2015-02-12 | 2016-08-18 | Samsung Electronics Co., Ltd. | Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same |
-
1987
- 1987-07-14 JP JP17680087A patent/JPS6418436A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160237558A1 (en) * | 2015-02-12 | 2016-08-18 | Samsung Electronics Co., Ltd. | Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same |
| US9963346B2 (en) * | 2015-02-12 | 2018-05-08 | Samsung Electronics Co., Ltd. | Seamless hexagonal boron nitride atomic monolayer thin film and method of fabricating the same |
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