JPS6415914A - Crystal growth method - Google Patents

Crystal growth method

Info

Publication number
JPS6415914A
JPS6415914A JP62172148A JP17214887A JPS6415914A JP S6415914 A JPS6415914 A JP S6415914A JP 62172148 A JP62172148 A JP 62172148A JP 17214887 A JP17214887 A JP 17214887A JP S6415914 A JPS6415914 A JP S6415914A
Authority
JP
Japan
Prior art keywords
substrate
face azimuth
inp
face
crystal growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62172148A
Other languages
Japanese (ja)
Other versions
JP2664904B2 (en
Inventor
Kikuo Makita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62172148A priority Critical patent/JP2664904B2/en
Publication of JPS6415914A publication Critical patent/JPS6415914A/en
Application granted granted Critical
Publication of JP2664904B2 publication Critical patent/JP2664904B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

PURPOSE:To prevent the generation of a hillock, etc., and to form film thickness having excellent uniform crystallizability by bringing the face azimuth of an InP substrate to a face azimuth inclined at 0.2-0.5 deg. from a (100) face and forming multilayer structure. CONSTITUTION:An InP substrate 1 inclined at 0.2-0.5 deg. from a face azimuth (100) is used, an InP buffer layer 2, an InxGa1-xAs (x=0.53) light absorbing layer 3 and an InP window layer 4 are shaped onto the substrate 1, and a p<+> region 5 is formed through a diffusion method. Consequently, since the multilayer structure of InxGa1-xAsyP1-y (0<=x<=1, 0<=y<=1) layers is laminated onto the substrate having a face azimuth tilted at 0.2-0.5 deg. from (100), and the surface atoms have some randomness because the face azimuth of the surface of the substrate is inclined slightly. Accordingly, the generation of a hillock, etc., is inhibited, crystallizability is not deteriorated by suppressing the inclination within 0.2-0.5 deg., and crystal growth having uniform layer thickness is enabled.
JP62172148A 1987-07-09 1987-07-09 Manufacturing method of semiconductor light receiving element Expired - Lifetime JP2664904B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62172148A JP2664904B2 (en) 1987-07-09 1987-07-09 Manufacturing method of semiconductor light receiving element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62172148A JP2664904B2 (en) 1987-07-09 1987-07-09 Manufacturing method of semiconductor light receiving element

Publications (2)

Publication Number Publication Date
JPS6415914A true JPS6415914A (en) 1989-01-19
JP2664904B2 JP2664904B2 (en) 1997-10-22

Family

ID=15936454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62172148A Expired - Lifetime JP2664904B2 (en) 1987-07-09 1987-07-09 Manufacturing method of semiconductor light receiving element

Country Status (1)

Country Link
JP (1) JP2664904B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0701008A2 (en) 1994-09-08 1996-03-13 Sumitomo Electric Industries, Limited Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207119A (en) * 1987-02-24 1988-08-26 Toshiba Corp Vapor growth method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63207119A (en) * 1987-02-24 1988-08-26 Toshiba Corp Vapor growth method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0701008A2 (en) 1994-09-08 1996-03-13 Sumitomo Electric Industries, Limited Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
EP0701008A3 (en) * 1994-09-08 1996-06-26 Sumitomo Electric Industries Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth
US5647917A (en) * 1994-09-08 1997-07-15 Sumitomo Electric Industries, Ltd. Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth

Also Published As

Publication number Publication date
JP2664904B2 (en) 1997-10-22

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