JPS6415370A - Dc sputtering method - Google Patents

Dc sputtering method

Info

Publication number
JPS6415370A
JPS6415370A JP17023587A JP17023587A JPS6415370A JP S6415370 A JPS6415370 A JP S6415370A JP 17023587 A JP17023587 A JP 17023587A JP 17023587 A JP17023587 A JP 17023587A JP S6415370 A JPS6415370 A JP S6415370A
Authority
JP
Japan
Prior art keywords
target
sintered body
chamber
sputtering
conductive sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17023587A
Other languages
Japanese (ja)
Other versions
JP2578815B2 (en
Inventor
Yosuke Fujita
Jun Kuwata
Masahiro Nishikawa
Takao Toda
Tomizo Matsuoka
Atsushi Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62170235A priority Critical patent/JP2578815B2/en
Publication of JPS6415370A publication Critical patent/JPS6415370A/en
Application granted granted Critical
Publication of JP2578815B2 publication Critical patent/JP2578815B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PURPOSE:To inexpensively and easily form a thin metallic film layer having excellent characteristics at a high speed by impressing a DC voltage intermittently to a conductive sintered body consisting of a metal compd. in a reactive gas-contg. atmosphere. CONSTITUTION:The conductive sintered body consisting of the metal compd. obtd. by adding a binder to powder of, for example, BaTiO3, and molding the mixture under pressurization, then removing the binder therefrom by heating and subjecting the molding to sintering and reduction in a reducing atmosphere is polished and formed and is stuck onto a backing plate made of phosphor bronze, etc., to obtain a target 1 consisting of the conductive sintered body of the metal compd. The above-mentioned target 1 is then imposed on a cathode 3 installed with a permanent magnet 4 which applies a magnetic field parallel with the surface of the target 1 in a sputtering chamber 2 of a DC sputtering device and a substrate 5 consisting of aluminosilicate glass provided with an ITO film is disposed in the chamber and is heated, while a reactive gas such as O2 and gas such as Ar are introduced into the chamber. Sputtering is thus executed by impressing the DC voltage intermittently the target from a DC power supply 6, by which the colorless and transparent high-performance thin film is formed on the substrate 5.
JP62170235A 1987-07-08 1987-07-08 DC sputtering method Expired - Fee Related JP2578815B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170235A JP2578815B2 (en) 1987-07-08 1987-07-08 DC sputtering method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170235A JP2578815B2 (en) 1987-07-08 1987-07-08 DC sputtering method

Publications (2)

Publication Number Publication Date
JPS6415370A true JPS6415370A (en) 1989-01-19
JP2578815B2 JP2578815B2 (en) 1997-02-05

Family

ID=15901171

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170235A Expired - Fee Related JP2578815B2 (en) 1987-07-08 1987-07-08 DC sputtering method

Country Status (1)

Country Link
JP (1) JP2578815B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01301856A (en) * 1988-05-30 1989-12-06 Shimadzu Corp Sputtering device
EP0905273A2 (en) * 1993-07-28 1999-03-31 Asahi Glass Company Method for producing films
JP2004107774A (en) * 2002-09-20 2004-04-08 Seiko Epson Corp Sputtering film deposition method, sputtering film deposition system, and method for producing optoelectronic apparatus
WO2008040502A1 (en) * 2006-09-29 2008-04-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for depositing an oxide layer on absorbers of solar cells, solar cell and use of the method
RU2620534C2 (en) * 2015-09-08 2017-05-26 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Казанский (Приволжский) федеральный университет" (ФГАОУВПО КФУ) Method of coating and device for its implementation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7488526B2 (en) 2005-11-22 2009-02-10 Ricoh Company, Ltd. Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136480A (en) * 1983-01-10 1984-08-06 メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Target for cathode sputtering
JPS61261473A (en) * 1985-05-15 1986-11-19 Tokuda Seisakusho Ltd Sputtering device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59136480A (en) * 1983-01-10 1984-08-06 メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング Target for cathode sputtering
JPS61261473A (en) * 1985-05-15 1986-11-19 Tokuda Seisakusho Ltd Sputtering device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01301856A (en) * 1988-05-30 1989-12-06 Shimadzu Corp Sputtering device
EP0905273A2 (en) * 1993-07-28 1999-03-31 Asahi Glass Company Method for producing films
EP0905273A3 (en) * 1993-07-28 1999-04-28 Asahi Glass Company Method for producing films
US6468403B1 (en) 1993-07-28 2002-10-22 Asahi Glass Company Ltd. Methods for producing functional films
JP2004107774A (en) * 2002-09-20 2004-04-08 Seiko Epson Corp Sputtering film deposition method, sputtering film deposition system, and method for producing optoelectronic apparatus
WO2008040502A1 (en) * 2006-09-29 2008-04-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Method for depositing an oxide layer on absorbers of solar cells, solar cell and use of the method
RU2620534C2 (en) * 2015-09-08 2017-05-26 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Казанский (Приволжский) федеральный университет" (ФГАОУВПО КФУ) Method of coating and device for its implementation

Also Published As

Publication number Publication date
JP2578815B2 (en) 1997-02-05

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees