JP2578815B2 - DC sputtering method - Google Patents
DC sputtering methodInfo
- Publication number
- JP2578815B2 JP2578815B2 JP62170235A JP17023587A JP2578815B2 JP 2578815 B2 JP2578815 B2 JP 2578815B2 JP 62170235 A JP62170235 A JP 62170235A JP 17023587 A JP17023587 A JP 17023587A JP 2578815 B2 JP2578815 B2 JP 2578815B2
- Authority
- JP
- Japan
- Prior art keywords
- target
- sputtering
- sputtering method
- metal compound
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 この発明は電子部品等の化合物薄膜の製造工程に用い
られる直流スパッタリング法に関する。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a direct current sputtering method used in a manufacturing process of a compound thin film such as an electronic component.
従来の技術 酸化物等の金属化合物の誘電体薄膜を形成するには、
金属をターゲットとする場合と焼結体をターゲットとす
る場合がある。特に複合酸化物等の複雑な化合物薄膜
は、相当する組成の合金ターゲットが作りにくいため、
焼結体をターゲットにする必要がある。この時スパッタ
リングの方法はRFスパッタリングが一般的である。2. Description of the Related Art To form a dielectric thin film of a metal compound such as an oxide,
There are a case where a metal is a target and a case where a sintered body is a target. In particular, complex compound thin films such as complex oxides are difficult to produce alloy targets of the corresponding composition,
It is necessary to target a sintered body. At this time, the sputtering method is generally RF sputtering.
発明が解決しようとする問題点 RFスパッタリングは直流スパッタリングに比べて同一
パワーでは成膜速度が遅い。また、RF電源、カソードの
マッチング回路、及びその自動制御装置等が必要であ
り、直流スパッタリング法に比べて、装置の構成が大き
くなり非常に高価である。Problems to be Solved by the Invention RF sputtering has a lower film formation rate at the same power than DC sputtering. In addition, an RF power source, a matching circuit for a cathode, an automatic control device for the same, and the like are required, and the configuration of the device becomes large and very expensive as compared with the DC sputtering method.
本発明は上述した従来の欠点に鑑み、誘電体薄膜を高
速度で安価に形成する方法を提供するものである。The present invention has been made in view of the above-mentioned conventional drawbacks, and provides a method for forming a dielectric thin film at high speed and at low cost.
問題点を解決するための手段 反応性ガスを含む雰囲気中で、誘導性を有する金属化
合物を導電性に改質した焼結体をターゲットとして間欠
的に直流電圧を印加する事により、前記ターゲットと前
記反応性ガスの反応により生じた金属化合物の誘電体を
形成する。Means for solving the problem In an atmosphere containing a reactive gas, by intermittently applying a DC voltage to a sintered body obtained by modifying a metal compound having conductivity to be conductive, the target and the target are intermittently applied. A dielectric of the metal compound formed by the reaction of the reactive gas is formed.
作 用 導電性の金属化合物ターゲットに間欠的に直流電圧を
印加することで、ターゲット表面の電位の不安定さが除
かれてスパッタリングが安定して行われる。Effect By applying a DC voltage intermittently to the conductive metal compound target, the instability of the potential on the target surface is removed and the sputtering is stably performed.
実施例 ターゲットとしては導電性のBaTiO3焼結体を用いた。
この焼結体は次のようにして作成する。BaCO3とTiO2の
粉末を混合し、1200℃の空気雰囲気で２時間の熱処理を
することでBaCO3とTiO2が反応してBaTiO3の粉末が出来
る。その粉末にバインダを加えて加圧成形した後、約30
0℃の加熱により前記バインダを飛散させ、10％H2を含
むN2中、熱処理温度1350℃で３時間の処理により焼結と
還元を同時に行った。Example A conductive BaTiO 3 sintered body was used as a target.
This sintered body is prepared as follows. Mixing the powders of BaCO 3 and TiO 2, 1200 ° C. for making the heat treatment of 2 hours in an air atmosphere BaCO 3 and TiO 2 is BaTiO 3 powder can be reacted. After adding a binder to the powder and pressing it, about 30
The heating of 0 ℃ to scatter the binder, in N 2 containing 10% H 2, was carried out with sintered reduced simultaneously by treatment for 3 hours at the heat treatment temperature 1350 ° C..
こうして得られた焼結体の密度は理論値の約92％、抵
抗率は５×103Ω・cmであり、還元されたため体色は鼠
色であった。The density of the thus obtained sintered body was about 92% of the theoretical value, the resistivity was 5 × 10 3 Ω · cm, and the body color was rattan due to reduction.
上記により得た焼結体の外形を研磨等により成形し、
直径100mm,厚さ5mmの円板状にし、それを燐青銅製のバ
ッキングプレート上にインジウム半田で貼り着けてBaTi
O3のターゲットを作成した。The outer shape of the sintered body obtained above is formed by polishing or the like,
A disk with a diameter of 100mm and a thickness of 5mm is attached on a backing plate made of phosphor bronze with indium solder and BaTi
It created the O 3 of the target.
第１図は直流スパッタリング装置の断面概要を示した
もので、上述のように形成したBaTiO3のターゲット１
を、図のようにスパッタリングチャンバ２の中に設置し
た。この直流スパッタリング装置のカソード３内に、タ
ーゲット１の表面と平行な磁界を与える永久磁石４が設
置されており、直流マグネトロンスパッタリングを行う
装置である。基板５はITO膜を設けたアルミノシリケイ
ドガラスを使用し、450℃に加熱した。FIG. 1 shows an outline of a cross section of a DC sputtering apparatus, and a target 1 of BaTiO 3 formed as described above.
Was installed in the sputtering chamber 2 as shown in the figure. A permanent magnet 4 for applying a magnetic field parallel to the surface of the target 1 is installed in a cathode 3 of the DC sputtering apparatus, and is an apparatus for performing DC magnetron sputtering. The substrate 5 was made of aluminosilicate glass provided with an ITO film, and was heated to 450 ° C.
O2ガスとArガスをスパッタリングチャンバ２内に導入
して圧力を1.5Paに設定した。O2ガスとArガスの流量比
は30:70とした。スパッタリングチャンバ２にアース電
位を与えた。直流電源６には供給する電力をオンオフす
る回路が設けられていて、第２図に示すような波形の電
圧をターゲット１に印加した。この電圧は−260Vを間欠
的に印加するもので、0.9ms印加し0.1ms休止するサイク
ルを繰り返した。放電電流は1150mA、電力は300Wであ
り、放電は安定に持続した。そのまま30分間スパッタリ
ングを続けたところ、無色透明な薄膜が基板５上に形成
された。膜厚は570nmであった。この膜の1kHzでの誘電
特性を測定したところ、比誘電率は140で、誘電損失は
0.6％であった。又、絶縁破壊電界強度は1.8MV/cmであ
り、優れた誘電体膜であった。O 2 gas and Ar gas were introduced into the sputtering chamber 2 and the pressure was set to 1.5 Pa. The flow ratio of O 2 gas to Ar gas was 30:70. An earth potential was applied to the sputtering chamber 2. The DC power supply 6 was provided with a circuit for turning on and off the supplied power, and a voltage having a waveform as shown in FIG. 2 was applied to the target 1. This voltage was applied intermittently at -260 V, and a cycle of applying 0.9 ms and resting for 0.1 ms was repeated. The discharge current was 1150 mA, the power was 300 W, and the discharge continued stably. When the sputtering was continued for 30 minutes, a colorless and transparent thin film was formed on the substrate 5. The film thickness was 570 nm. When the dielectric properties of this film at 1 kHz were measured, the relative dielectric constant was 140 and the dielectric loss was
0.6%. Further, the dielectric breakdown electric field strength was 1.8 MV / cm, and it was an excellent dielectric film.
同じターゲットを用い、ガス流量、ガス圧力、スパッ
タリング電力を同じにしてRFマグネトロンスパッタリン
グを行ったところ、30分間のスパッタリングで360nmの
膜厚となった。直流スパッタリングの63％の成膜速度で
ある。この時の印加電圧は2.4kV、電流は195mAであっ
た。When RF magnetron sputtering was performed using the same target with the same gas flow rate, gas pressure, and sputtering power, the film thickness was 360 nm after 30 minutes of sputtering. It is a film formation rate of 63% of DC sputtering. At this time, the applied voltage was 2.4 kV and the current was 195 mA.
従来の方法のように、休止期間を設けずにターゲット
に−260Vを印加し続けたところ、ターゲット上で異常放
電が発生した。この異常放電はプラズマ中で瞬間的に明
るく光るもので、アーク放電が起こっていると考えられ
る。ターゲット表面は放電のエネルギーで直径1mm程度
の領域が破壊した。割れたり溶けたセラミックスが基板
５の上に付着するという問題も起こった。これはターゲ
ット表面の一部に電位的な不均一が生じたために起きた
絶縁破壊と考えられる。As in the conventional method, when -260 V was continuously applied to the target without a pause, abnormal discharge occurred on the target. This abnormal discharge instantly glows brightly in the plasma, and it is considered that arc discharge has occurred. An area of about 1 mm in diameter was destroyed on the target surface by the energy of discharge. There was also a problem that cracked or melted ceramics adhered to the substrate 5. This is considered to be dielectric breakdown caused by potential nonuniformity on a part of the target surface.
BaTiO3以外の金属酸化物でも、本発明が適用出来るの
は言うまでもない。又、窒化物等の金属化合物において
も本発明は同様に有用である。It goes without saying that the present invention can be applied to metal oxides other than BaTiO 3 . The present invention is also useful for metal compounds such as nitrides.
発明の効果 この発明の製造方法によれば、特性の優れた金属化合
物薄膜層をDCスパッタリング法により高速度で、簡単に
形成することができる。According to the manufacturing method of the present invention, a metal compound thin film layer having excellent characteristics can be easily formed at a high speed by a DC sputtering method.
第１図は本発明の直流スパッタリング法を模式的に示す
断面図、第２図はターゲットへの印加電圧を示す波形図
である。 １……焼結体ターゲット、２……スパッタリングチャン
バ、５……基板、６……直流電源。FIG. 1 is a cross-sectional view schematically showing a DC sputtering method of the present invention, and FIG. 2 is a waveform chart showing a voltage applied to a target. 1 ... Sintered body target, 2 ... Sputtering chamber, 5 ... Substrate, 6 ... DC power supply.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 任田 隆夫 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 松岡 富造 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (72)発明者 阿部 惇 大阪府門真市大字門真1006番地 松下電 器産業株式会社内 (56)参考文献 特開 昭59−136480（ＪＰ，Ａ) 特開 昭61−261473（ＪＰ，Ａ) ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Takao Nita 1006 Kazuma Kadoma, Kadoma City, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. In-company (72) Inventor Atsushi Abe 1006 Kadoma, Kadoma, Osaka Prefecture Inside Matsushita Electric Industrial Co., Ltd. (56) References JP-A-59-136480 (JP, A) JP-A-61-261473 (JP, A )
Claims (2)
する金属化合物を導電性に改質した焼結体をターゲット
として、間欠的に直流電圧を印加する事により、前記タ
ーゲットと前記反応性ガスの反応により生じた金属化合
物の誘電体を形成することを特徴とする直流スパッタリ
ング法。An intermittent application of a DC voltage to a target of a sintered body obtained by modifying a metal compound having a dielectric property to be conductive in an atmosphere containing a reactive gas, whereby the target reacts with the target. A direct current sputtering method characterized by forming a dielectric of a metal compound generated by a reaction of a reactive gas.
が金属酸化物であることを特徴とする特許請求の範囲第
１項に記載の直流スパッタリング法。2. The direct-current sputtering method according to claim 1, wherein the reactive gas is oxygen gas, and the metal compound is a metal oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170235A JP2578815B2 (en) | 1987-07-08 | 1987-07-08 | DC sputtering method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62170235A JP2578815B2 (en) | 1987-07-08 | 1987-07-08 | DC sputtering method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6415370A JPS6415370A (en) | 1989-01-19 |
| JP2578815B2 true JP2578815B2 (en) | 1997-02-05 |
Family
ID=15901171
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62170235A Expired - Fee Related JP2578815B2 (en) | 1987-07-08 | 1987-07-08 | DC sputtering method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2578815B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7488526B2 (en) | 2005-11-22 | 2009-02-10 | Ricoh Company, Ltd. | Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2836072B2 (en) * | 1988-05-30 | 1998-12-14 | 株式会社島津製作所 | Sputtering equipment |
| EP0636702B1 (en) | 1993-07-28 | 1999-05-19 | Asahi Glass Company Ltd. | Methods for producing functional films |
| JP2004107774A (en) * | 2002-09-20 | 2004-04-08 | Seiko Epson Corp | Sputtering film deposition method, sputtering film deposition system, and method for producing optoelectronic apparatus |
| DE102006046312B4 (en) * | 2006-09-29 | 2010-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Solar cells with stable, transparent and conductive layer system |
| RU2620534C2 (en) * | 2015-09-08 | 2017-05-26 | Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Казанский (Приволжский) федеральный университет" (ФГАОУВПО КФУ) | Method of coating and device for its implementation |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3300525A1 (en) * | 1983-01-10 | 1984-07-12 | Merck Patent Gmbh, 6100 Darmstadt | TARGETS FOR CATHOD SPRAYING |
| JPS61261473A (en) * | 1985-05-15 | 1986-11-19 | Tokuda Seisakusho Ltd | Sputtering device |
-
1987
- 1987-07-08 JP JP62170235A patent/JP2578815B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7488526B2 (en) | 2005-11-22 | 2009-02-10 | Ricoh Company, Ltd. | Sputtering target and manufacturing method therefor, and optical recording medium and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6415370A (en) | 1989-01-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |