JPS6414982A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS6414982A
JPS6414982A JP17061387A JP17061387A JPS6414982A JP S6414982 A JPS6414982 A JP S6414982A JP 17061387 A JP17061387 A JP 17061387A JP 17061387 A JP17061387 A JP 17061387A JP S6414982 A JPS6414982 A JP S6414982A
Authority
JP
Japan
Prior art keywords
laser
output
laser diode
deterioration
monitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17061387A
Other languages
Japanese (ja)
Inventor
Toshiyuki Nagano
Masashi Mizunoe
Mitsuhiko Hotta
Shigetaka Kishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
J Morita Manufaturing Corp
Original Assignee
Sony Corp
J Morita Manufaturing Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp, J Morita Manufaturing Corp filed Critical Sony Corp
Priority to JP17061387A priority Critical patent/JPS6414982A/en
Publication of JPS6414982A publication Critical patent/JPS6414982A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To detect any abnormal deterioration or/and abnormal high laser output by a simple circuit enabling any trouble of a laser diode, etc. to be prevented by a method wherein a judging means to make a judgment on the deterioration of a semiconductor laser or/and the abnormality of a semiconductor laser output making reference to the fluctuation of monitor output is provided. CONSTITUTION:The title semiconductor laser device is composed of a laser diode 1, a detecting circuit 2 detecting the monitor current of laser output from the laser diode 1 to output monitor voltage V0, an APC circuit 3 comparing the monitor voltage V0 with a reference voltage V1 to keep the laser output from the laser diode 1 constant and a judging circuit 4 comparing the monitor voltage V0 with another reference voltage V2 to make a judgment on the deterioration of the laser diode 1 or the abnormality of laser output. When the deterioration of the laser diode 1 advances, the driving current to assure a specific laser output increases, however, the output current from an operating amplifier is bypassed to a Zener diode 18 to prevent an overcurrent from running into the laser diode 1.
JP17061387A 1987-07-08 1987-07-08 Semiconductor laser device Pending JPS6414982A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17061387A JPS6414982A (en) 1987-07-08 1987-07-08 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17061387A JPS6414982A (en) 1987-07-08 1987-07-08 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS6414982A true JPS6414982A (en) 1989-01-19

Family

ID=15908107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17061387A Pending JPS6414982A (en) 1987-07-08 1987-07-08 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS6414982A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018011986A1 (en) * 2016-07-15 2018-01-18 オリンパス株式会社 Scanning endoscope

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018011986A1 (en) * 2016-07-15 2018-01-18 オリンパス株式会社 Scanning endoscope

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