JPS6414855A - Ion implantation device - Google Patents

Ion implantation device

Info

Publication number
JPS6414855A
JPS6414855A JP62171502A JP17150287A JPS6414855A JP S6414855 A JPS6414855 A JP S6414855A JP 62171502 A JP62171502 A JP 62171502A JP 17150287 A JP17150287 A JP 17150287A JP S6414855 A JPS6414855 A JP S6414855A
Authority
JP
Japan
Prior art keywords
electrode
pullout
detector
light
predetermined position
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62171502A
Other languages
Japanese (ja)
Inventor
Kazunori Hosokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62171502A priority Critical patent/JPS6414855A/en
Publication of JPS6414855A publication Critical patent/JPS6414855A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE:To enable the simple adjustment of a pullout electrode in a short time by providing a detector and a display corresponding to respective illuminants so as to detect light from a plurlaity of the illuminants when the pullout electrode is at the predetermined position. CONSTITUTION:A slit 10 is so set as to allow a maximum amount of light from an illuminant 9 when a pullout electrode 2a is set at the predetermined position. The light from the illuminant 9 provided in an ion source part 1 passes the slit 10 of the pullout electrode 2a and is received by a detector 11 provided at the rear of the electrode 2a. As a detected signal from the detector 11 gives a voltage change depending upon a light receiving amount, the voltage is measured by a measurement instrument 12 and the result of the measurement is shown on a display 13. By controlling the position of the pullout electrode 2a in such a way as to obtain the maximum value of measurement with each instrument 12, therefore, the position of the electrode 2a can be adjusted to the predetermined position.
JP62171502A 1987-07-08 1987-07-08 Ion implantation device Pending JPS6414855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62171502A JPS6414855A (en) 1987-07-08 1987-07-08 Ion implantation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62171502A JPS6414855A (en) 1987-07-08 1987-07-08 Ion implantation device

Publications (1)

Publication Number Publication Date
JPS6414855A true JPS6414855A (en) 1989-01-19

Family

ID=15924291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62171502A Pending JPS6414855A (en) 1987-07-08 1987-07-08 Ion implantation device

Country Status (1)

Country Link
JP (1) JPS6414855A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007076759A (en) * 2005-09-12 2007-03-29 Mitsubishi Electric Corp Cable fixing device
JP2008258084A (en) * 2007-04-09 2008-10-23 Seiko Instruments Inc Ion beam inspection device and method, semiconductor manufacturing device, and ion source device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007076759A (en) * 2005-09-12 2007-03-29 Mitsubishi Electric Corp Cable fixing device
JP2008258084A (en) * 2007-04-09 2008-10-23 Seiko Instruments Inc Ion beam inspection device and method, semiconductor manufacturing device, and ion source device
KR101421737B1 (en) * 2007-04-09 2014-07-22 세이코 인스트루 가부시키가이샤 Ion beam inspection apparatus, ion beam inspecting method, semiconductor manufacturing apparatus, and ion source apparatus

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