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Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Application filed by Matsushita Electric Industrial Co LtdfiledCriticalMatsushita Electric Industrial Co Ltd
Priority to JP17140387ApriorityCriticalpatent/JPS6414197A/en
Publication of JPS6414197ApublicationCriticalpatent/JPS6414197A/en
Physical Deposition Of Substances That Are Components Of Semiconductor Devices
(AREA)
Recrystallisation Techniques
(AREA)
Crystals, And After-Treatments Of Crystals
(AREA)
Abstract
PURPOSE:To improve the crystallinity of a zinc selenide film and to increase the light emitting efficiency of a blue light emitting device using the film by forming the zinc selenide film on a gallium arsenide substrate with a prescribed strain superlattice as a buffer layer in-between. CONSTITUTION:The compositional ratio of sulfur in zinc sulfide selenide (ZnSxSe1-x) forming a first layer is regulated to 0.16+ or -0.04. A strain superlattice consisting of zinc sulfide selenide layers in which the compositional ratio of sulfur has been gradually reduced and a zinc selenide layer is formed as a butter layer on a gallium arsenide substrate. Zinc selenide is epitaxial-grown on the buffer layer.
JP17140387A1987-07-091987-07-09Formation of zinc selenide film
PendingJPS6414197A
(en)
Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least Zn, Se and in an amount of 1 to 40 atomic per cent
Pin junction photovoltaic element with p or n-type semiconductor layer comprising non-single crystal material containing zn, se, h in an amount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material
Pin junction photovoltaic element with p or n-type semiconductor layer comprising non-single crystal material containing zn, se, te, h in an amount of 1 to 4 atomic % and a dopant and i-type semiconductor layer comprising non-single crystal si(h,f) material