JPS6413809A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6413809A
JPS6413809A JP62168652A JP16865287A JPS6413809A JP S6413809 A JPS6413809 A JP S6413809A JP 62168652 A JP62168652 A JP 62168652A JP 16865287 A JP16865287 A JP 16865287A JP S6413809 A JPS6413809 A JP S6413809A
Authority
JP
Japan
Prior art keywords
output
turned
constant current
current
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62168652A
Other languages
Japanese (ja)
Inventor
Ryoichi Hori
Kiyoo Ito
Goro Kitsukawa
Yoshiki Kawajiri
Takao Watabe
Takayuki Kawahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62168652A priority Critical patent/JPS6413809A/en
Priority to US07/126,485 priority patent/US4873673A/en
Priority to KR1019870013720A priority patent/KR930010524B1/en
Publication of JPS6413809A publication Critical patent/JPS6413809A/en
Priority to US09/168,998 priority patent/US6125075A/en
Priority to US09/506,438 priority patent/US6363029B1/en
Priority to US10/103,827 priority patent/US6608791B2/en
Priority to US10/441,207 priority patent/US6970391B2/en
Pending legal-status Critical Current

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  • Dram (AREA)

Abstract

PURPOSE:To reduce the transient current at the charge/discharge of a load by using a current mirror circuit controlled by an input pluse and driving the load by constant current corresponding to a predetermined constant current source in the circuit. CONSTITUTION:When an input pulse phi is applied to an AND in case of the output voltage V0 of a driving circuit DRV lower than the internal power supply VCL and the output of a comparator at a high voltage, a transistor(TR) Q2 in TRs Q1, Q2 constituting an inverter is turned on and the TR Q1 is turned off. Thus, a current mirror circuit is formed between a TR Q3, a constant current source (i/n) and an output drive TR QD and a constant current (i) flows to a common line Cl of a sense amplifier to charge the data line. In this case, when the current flowing to the common line Cl is increased and the voltage V0 exceeds the VCL, the output of the comparator goes to a low voltage, the output of the AND goes to a low voltage, the TR Q1 is turned on, the TRs Q2, QD are turned off, the data lines D0, D0' are charged without increasing the transient current.
JP62168652A 1985-07-22 1987-07-08 Semiconductor device Pending JPS6413809A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP62168652A JPS6413809A (en) 1987-07-08 1987-07-08 Semiconductor device
US07/126,485 US4873673A (en) 1986-12-03 1987-11-30 Driver circuit having a current mirror circuit
KR1019870013720A KR930010524B1 (en) 1986-12-03 1987-12-02 Semiconductor memory driver circuit having a current mirror circuit
US09/168,998 US6125075A (en) 1985-07-22 1998-10-09 Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US09/506,438 US6363029B1 (en) 1985-07-22 2000-02-18 Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US10/103,827 US6608791B2 (en) 1985-07-22 2002-03-25 Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions
US10/441,207 US6970391B2 (en) 1985-07-22 2003-05-20 Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62168652A JPS6413809A (en) 1987-07-08 1987-07-08 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6413809A true JPS6413809A (en) 1989-01-18

Family

ID=15871994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62168652A Pending JPS6413809A (en) 1985-07-22 1987-07-08 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6413809A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065267A (en) * 1990-07-20 1991-11-12 Matsushita Electric Industrial Co., Ltd. Multi-track magnetic head having different height head chips
JPH04113583A (en) * 1990-08-31 1992-04-15 Nec Ic Microcomput Syst Ltd Driving circuit for sense amplifier
JPH04162289A (en) * 1990-10-26 1992-06-05 Nec Corp Dynamic memory
US5422771A (en) * 1992-07-21 1995-06-06 U.S. Philips Corporation Rotary scanning device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065267A (en) * 1990-07-20 1991-11-12 Matsushita Electric Industrial Co., Ltd. Multi-track magnetic head having different height head chips
JPH04113583A (en) * 1990-08-31 1992-04-15 Nec Ic Microcomput Syst Ltd Driving circuit for sense amplifier
JPH04162289A (en) * 1990-10-26 1992-06-05 Nec Corp Dynamic memory
US5422771A (en) * 1992-07-21 1995-06-06 U.S. Philips Corporation Rotary scanning device

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