KR870001387Y1 - Power circuit - Google Patents
Power circuit Download PDFInfo
- Publication number
- KR870001387Y1 KR870001387Y1 KR2019840010351U KR840010351U KR870001387Y1 KR 870001387 Y1 KR870001387 Y1 KR 870001387Y1 KR 2019840010351 U KR2019840010351 U KR 2019840010351U KR 840010351 U KR840010351 U KR 840010351U KR 870001387 Y1 KR870001387 Y1 KR 870001387Y1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- transistor
- output side
- input
- output
- Prior art date
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Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Abstract
내용 없음.No content.
Description
본 고안의 회로도.Circuit diagram of the present invention.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 입력측 2 : 출력측1: input side 2: output side
Q1,Q2,Q3: 트랜지스터 R1,R2,R3: 저항Q 1 , Q 2 , Q 3 : Transistors R 1 , R 2 , R 3 : Resistance
VR1: 가변저항 C1: 콘덴서VR 1 : Variable resistor C 1 : Capacitor
본 고안은 입력 전원의 변동에 관계 없이 안정된 출력 전압을 얻고자 하는 정전압 회로에 관한 것이다. 정전압 회로는 기존에서부터 여러가지 회로들이 제안되었으나 각 사용 전압이나 용도에 따라서는 각각 상이한 정전압 회로들이 요구되는 것이었다.The present invention relates to a constant voltage circuit for obtaining a stable output voltage regardless of fluctuation of an input power source. In the constant voltage circuit, various circuits have been proposed in the past, but different constant voltage circuits were required according to the respective voltages and applications.
본 고안은 특히 저전압의 전압에 따라 구동되는 정전압 회로를 제공하고자 하는 것이며, 순간적인 전압 강하시에는 콘덴서의 방전 전압에 의하여 안정된 출력 전압을 얻고자 하는 것으로 출력측에 제너다이오드와 가변 저항으로 트랜지스터의 바이어스 전압을 공급하여 입력측의 트랜지스터가 제어되도록 구성하고 출력측의 콘덴서에 의하여 순간적인 전압강하시에 방전되도록 구성함으로서 안정된 출력 전압을 얻고자 하는 것이다. 이를 첨부 도면에 의하여 상세히 설명하면 다음과 같다.The present invention aims to provide a constant voltage circuit driven according to a low voltage, and in order to obtain a stable output voltage due to the discharge voltage of a capacitor during instantaneous voltage drop, the bias of the transistor with a zener diode and a variable resistor on the output side. It is intended to obtain a stable output voltage by supplying a voltage so that the transistor on the input side is controlled and discharged at a momentary voltage drop by the capacitor on the output side. This will be described in detail with reference to the accompanying drawings.
본 고안은 입력측(1)에서 저항(R2)을 통하여 트랜지스터(Q2) 베이스에 바이어스 전압이 인가되게 구성하여 트랜지스터(Q2)의 구동시 트랜지스터(Q1)가 도통하여 콘덴서(C1)에 충전되면서 출력측(2) 제너다이오드(ZD1)와 가변저항(VR1)을 통하여 출력측 전압이 인가되게 구성하고, 이 전압이 저항(R3)을 통하여 트랜지스터(Q3)에 바이어스 전압이 인가되게 구성함으로써 트랜지스터(Q3)가 제어되어 트랜지스터(Q2)에 인가되는 바이어스 전압이 제어되게 구성한 것이다.The present design is that when driving the transistor (Q 1) of the configuration presented by the resistance (R 2) at the input side (1) applying a bias voltage to the transistor (Q 2), the base transistor (Q 2) interconnecting the condenser (C 1) It is configured to apply the output side voltage through the zener diode ZD 1 and the variable resistor VR 1 to the output side 2 while being charged to the voltage, and the bias voltage is applied to the transistor Q 3 through the resistor R 3 . The transistor Q 3 is controlled so that the bias voltage applied to the transistor Q 2 is controlled.
이와 같이 구성된 본 고안에서 입력측(1)에 저전압이 인가되면 저항(R2)을 통하여 트랜지스터(Q2)의 베이스에 바이어스 전압이 인가되어 트랜지스터(Q2)가 구동하게 되고, 트랜지스터(Q2)가 구동되면 그의 콜렉터측은 저전위 상태가 되므로 트랜지스터(Q1)에 바이어스 전압이 인가되어 트랜지스터(Q1)가 구동하게 된다. 따라서 트랜지스터(Q1)가 도통되면 입력측(1) 전원이 콘덴서(C1)에 충전되면서 제너다이오드(ZD1)에 정전압이 인가되고 출력측(2)으로 정전압이 출력되게 된다.When this low voltage is applied to the input side (1) in the present design is configured as a bias voltage to the base of the transistor (Q 2) via the resistor (R 2) is applied and to the transistor (Q 2) driving transistor (Q 2) When the drive side of its collector, so that the low potential condition is a bias voltage to the transistor (Q 1) is applied to the transistor (Q 1) driving. Therefore, when the transistor (Q 1) is conductive so the input side (1) power is the capacitor (C 1) is applied to the constant-voltage charge as in a zener diode (ZD 1) a constant voltage is output to the output side (2) on.
그리고 제너다이오드(ZD1)를 통하여 인가된 전압은 가변저항(VR1)에서 분배된 후 저항(R3)으로 트랜지스터(Q3) 베이스측에 인가되는 것으로 출력측(2) 전압이 설정치보다 높으면 트랜지스터(Q3)가 도통되면서 저항(R2)을 통하여 트랜지스터(Q2)에 인가되는 바이어스 전압을 제어하게 되므로 트랜지스터(Q1)의 바이어스 전압도 제어하게 되어 트랜지스터(Q1)를 통하여 흐르는 입력 전원이 제어되면서 출력측(2)에는 안정된 설정 전압을 얻을 수가 있는 것이다.The voltage applied through the zener diode ZD 1 is distributed from the variable resistor VR 1 and then applied to the base of the transistor Q 3 by the resistor R 3. When the output side 2 voltage is higher than the set value, the transistor As Q 3 is conducted, the bias voltage applied to the transistor Q 2 is controlled through the resistor R 2 , so that the bias voltage of the transistor Q 1 is also controlled to input power flowing through the transistor Q 1 . While being controlled, a stable set voltage can be obtained on the output side 2.
또한 이와 같이 본 고안은 입력측 전압에 따라 출력측에 안정된 전압을 공급하다가 입력측(1)에 순간적인 전압강하시에는 콘덴서(C1)에 충전된 전압이 출력측으로 방전하게 되어 출력측(2)은 입력 전압의 변동에 무관하게 안정된 출력을 얻을 수가 있는 것이다.In this way, the present invention supplies a stable voltage to the output side according to the input side voltage, but when the voltage is momentarily dropped on the input side 1, the voltage charged in the capacitor C 1 discharges to the output side, and the output side 2 receives the input voltage. The stable output can be obtained regardless of the fluctuation of.
이상에서와 같이 본 고안은 입력측 전원의 상승시에는 제너 다이오드와 가변 저항을 통하여 트랜지스터(Q3)를 제어하게 되어 입력측 트랜지스터(Q1)가 제어되므로 출력측에 안정된 전원을 제공할 수 있을 뿐만 아니라 입력측 전압의 순간적인 하강시에는 콘덴서(C1)에 충전된 전압을 방전시켜 출력측에 안정된 전원을 공급할 수가 있는 것으로 저전압(5V)의 출력이 필요하는전원 회로에 적합한 정전압 회로를 제공할 수가 있는 것이다.As described above, the present invention controls the transistor Q 3 through a zener diode and a variable resistor when the input power is increased, thereby controlling the input transistor Q 1 , thereby providing a stable power supply to the output side as well as providing an input voltage. In the instantaneous fall of the capacitor, the voltage charged in the capacitor C 1 can be discharged to provide a stable power supply to the output side, thereby providing a constant voltage circuit suitable for a power supply circuit requiring a low voltage (5V) output.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019840010351U KR870001387Y1 (en) | 1984-10-20 | 1984-10-20 | Power circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR2019840010351U KR870001387Y1 (en) | 1984-10-20 | 1984-10-20 | Power circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
KR860005370U KR860005370U (en) | 1986-06-11 |
KR870001387Y1 true KR870001387Y1 (en) | 1987-04-08 |
Family
ID=70162626
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR2019840010351U KR870001387Y1 (en) | 1984-10-20 | 1984-10-20 | Power circuit |
Country Status (1)
Country | Link |
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KR (1) | KR870001387Y1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002042689A1 (en) * | 2000-11-21 | 2002-05-30 | Lg Electronics Inc. | Bolometric humidity sensor and cooker using the same and method for controlling the cooker |
-
1984
- 1984-10-20 KR KR2019840010351U patent/KR870001387Y1/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002042689A1 (en) * | 2000-11-21 | 2002-05-30 | Lg Electronics Inc. | Bolometric humidity sensor and cooker using the same and method for controlling the cooker |
US6953921B2 (en) | 2000-11-21 | 2005-10-11 | Lg Electronics Inc. | Bolometric humidity sensor and cooker using the same and method for controlling the cooker |
Also Published As
Publication number | Publication date |
---|---|
KR860005370U (en) | 1986-06-11 |
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