JPS6413768A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6413768A
JPS6413768A JP62170213A JP17021387A JPS6413768A JP S6413768 A JPS6413768 A JP S6413768A JP 62170213 A JP62170213 A JP 62170213A JP 17021387 A JP17021387 A JP 17021387A JP S6413768 A JPS6413768 A JP S6413768A
Authority
JP
Japan
Prior art keywords
wiring pattern
semiconductor chips
metallic
insulating film
signal processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62170213A
Other languages
Japanese (ja)
Other versions
JPH0828488B2 (en
Inventor
Yoshihiro Miyamoto
Toshiro Yamamoto
Soichiro Hikita
Kunihiro Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP62170213A priority Critical patent/JPH0828488B2/en
Publication of JPS6413768A publication Critical patent/JPS6413768A/en
Publication of JPH0828488B2 publication Critical patent/JPH0828488B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To obtain one-dimensional infrared sensor, in which a metallic bump is not deformed plastically even when a semiconductor device is exposed to temperature cycles at the time of operation and the time of non-operation and which has a large number of picture elements, by connecting a signal output section for an infrared detecting element to a wiring pattern formed to an insulating substrate by the metallic bumps while connecting a signal input section for a signal processing circuit and the wiring pattern by a metallic column. CONSTITUTION:A specified wiring pattern 22 coated with an insulating film 23 is shaped onto an insulating substrate 21, and first semiconductor chips 24 to which one-dimensional infrared detecting elements 25 are formed are disposed zigzag onto the wiring pattern 22. Signal output sections for the detecting elements 25 are connected at one ends of said wiring pattern 22 by metallic bumps 26, 27 through opening sections shaped to the insulating film 23. Second semiconductor chips 28 to which signal processing circuits are formed are arranged zigzag correspondingly to the array of the semiconductor chips 24 on both sides of the semiconductor chips 24. Signal input sections for the signal processing circuits are connected at the other ends of the wiring pattern by metallic bumps 29, 30 through the opening sections shaped to the insulating film.
JP62170213A 1987-07-07 1987-07-07 Semiconductor device Expired - Fee Related JPH0828488B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62170213A JPH0828488B2 (en) 1987-07-07 1987-07-07 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62170213A JPH0828488B2 (en) 1987-07-07 1987-07-07 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS6413768A true JPS6413768A (en) 1989-01-18
JPH0828488B2 JPH0828488B2 (en) 1996-03-21

Family

ID=15900767

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62170213A Expired - Fee Related JPH0828488B2 (en) 1987-07-07 1987-07-07 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0828488B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020121852A1 (en) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 Photodetector
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11561131B2 (en) 2018-12-12 2023-01-24 Hamamatsu Photonics K.K. Determination method and light detection device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020121852A1 (en) * 2018-12-12 2020-06-18 浜松ホトニクス株式会社 Photodetector
US11513002B2 (en) 2018-12-12 2022-11-29 Hamamatsu Photonics K.K. Light detection device having temperature compensated gain in avalanche photodiode
US11561131B2 (en) 2018-12-12 2023-01-24 Hamamatsu Photonics K.K. Determination method and light detection device
US11901379B2 (en) 2018-12-12 2024-02-13 Hamamatsu Photonics K.K. Photodetector
US11927478B2 (en) 2018-12-12 2024-03-12 Hamamatsu Photonics K.K. Light detection device

Also Published As

Publication number Publication date
JPH0828488B2 (en) 1996-03-21

Similar Documents

Publication Publication Date Title
KR930001365A (en) Composite flip chip semiconductor device, fabrication and burn-in method
EP0353426A3 (en) Semiconductor integrated circuit device comprising conductive layers
EP0350588A3 (en) Electronic package with improved heat sink
EP0393997A3 (en) Method of providing a variable-pitch leadframe assembly
EP0304263A3 (en) Semiconductor chip assembly
EP1034942A4 (en) Semiconductor device and method of manufacturing the same
KR970018485A (en) Semiconductor devices
EP0381383A3 (en) Semiconductor device having insulating substrate adhered to conductive substrate
EP0322040A3 (en) Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
GB2137807B (en) A semiconductor component and method of manufacture
JPS6413768A (en) Semiconductor device
JPS5774166A (en) Array head of light emitting diode
EP0388891A3 (en) Semiconductor device
EP1041617A4 (en) Semiconductor device and method of production thereof and semiconductor mounting structure and method
EP0338817A3 (en) Semiconductor integrated circuit device and method of producing the same using master slice approach
JPS5732661A (en) Module of semiconductor element having high density
JPS5724563A (en) Semiconductor device
JPS5645039A (en) Optical head
JPS54104286A (en) Integrated circuit device
JPS55115339A (en) Ic stem
EP0329100A3 (en) Semiconductor device comprising a logic circuit and a memory
JPS53110371A (en) Ceramic package type semiconductor device
TW354411B (en) Semiconductor device and its manufacturing process
WO1998048449A3 (en) Flip chip and chip scale package
JP2590811B2 (en) Electric circuit device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees