JPS6412502A - Manufacture of thin film resistor - Google Patents
Manufacture of thin film resistorInfo
- Publication number
- JPS6412502A JPS6412502A JP62169004A JP16900487A JPS6412502A JP S6412502 A JPS6412502 A JP S6412502A JP 62169004 A JP62169004 A JP 62169004A JP 16900487 A JP16900487 A JP 16900487A JP S6412502 A JPS6412502 A JP S6412502A
- Authority
- JP
- Japan
- Prior art keywords
- pattern
- thin film
- region
- oxidation
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
PURPOSE:To block the progress of oxidation from the surface and to reduce the change of the value of resistance even in the environment of high temperature and high degree of humidity by a method wherein an electrode to be used for anodic oxidation is provided between a thin film, consisting of tantalum nitride, and a substrate and besides, the whole surface of the thin film resistor is covered by tantalum oxide or an electrode. CONSTITUTION:A covering for anodic oxidation such as Cr-Au, Ni-Cr, Ni-Cr-Au and the like, which become an electrode, is coated on an aluminum substrate 101, and a prescribed pattern 102 is formed using a photolithographic method and the like. Then, tantalum 103 which becomes a resistor is coated on the whole surface, and the pattern contacting the exposed surface of the substrate 101 is formed using the same photolithographic method as above. Subsequently, a resist 104 is provided on the region ranging from the end part of said pattern to the surface of the pattern 103, the region surrounded by the resist 104 is anodic-oxidized by dripping a chromic acid solution 105 of 0.3% thereon, and said region is changed to tantalum oxide. Thus, the progress of oxidation on the surface of the region can be prevented.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62169004A JPS6412502A (en) | 1987-07-07 | 1987-07-07 | Manufacture of thin film resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62169004A JPS6412502A (en) | 1987-07-07 | 1987-07-07 | Manufacture of thin film resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6412502A true JPS6412502A (en) | 1989-01-17 |
Family
ID=15878559
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62169004A Pending JPS6412502A (en) | 1987-07-07 | 1987-07-07 | Manufacture of thin film resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6412502A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6845823B2 (en) | 2001-11-22 | 2005-01-25 | Gtl Co., Ltd. | Fluorosurfactant-free foam fire-extinguisher |
CN105719783A (en) * | 2015-07-23 | 2016-06-29 | 中国电子科技集团公司第四十一研究所 | Thin-film resistor adjustment device for microwave circuit and adjustment method of thin-film resistor adjustment device |
CN112992448A (en) * | 2019-12-18 | 2021-06-18 | 光颉科技股份有限公司 | Thin film resistor element |
-
1987
- 1987-07-07 JP JP62169004A patent/JPS6412502A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6845823B2 (en) | 2001-11-22 | 2005-01-25 | Gtl Co., Ltd. | Fluorosurfactant-free foam fire-extinguisher |
CN105719783A (en) * | 2015-07-23 | 2016-06-29 | 中国电子科技集团公司第四十一研究所 | Thin-film resistor adjustment device for microwave circuit and adjustment method of thin-film resistor adjustment device |
CN112992448A (en) * | 2019-12-18 | 2021-06-18 | 光颉科技股份有限公司 | Thin film resistor element |
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