JPS6411936B2 - - Google Patents
Info
- Publication number
- JPS6411936B2 JPS6411936B2 JP56205876A JP20587681A JPS6411936B2 JP S6411936 B2 JPS6411936 B2 JP S6411936B2 JP 56205876 A JP56205876 A JP 56205876A JP 20587681 A JP20587681 A JP 20587681A JP S6411936 B2 JPS6411936 B2 JP S6411936B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- carbon atoms
- copolymer
- general formula
- methyl
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205876A JPS58106535A (ja) | 1981-12-19 | 1981-12-19 | レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法 |
| DE8282111725T DE3279090D1 (en) | 1981-12-19 | 1982-12-17 | Resist material and process for forming fine resist pattern |
| CA000418004A CA1207099A (en) | 1981-12-19 | 1982-12-17 | Resist material and process for forming fine resist pattern |
| US06/450,726 US4539250A (en) | 1981-12-19 | 1982-12-17 | Resist material and process for forming fine resist pattern |
| EP82111725A EP0090089B1 (en) | 1981-12-19 | 1982-12-17 | Resist material and process for forming fine resist pattern |
| US06/710,190 US4686168A (en) | 1981-12-19 | 1985-03-11 | Fluoroalkyl acrylate resist material and process for forming fine resist pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56205876A JPS58106535A (ja) | 1981-12-19 | 1981-12-19 | レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58106535A JPS58106535A (ja) | 1983-06-24 |
| JPS6411936B2 true JPS6411936B2 (cg-RX-API-DMAC7.html) | 1989-02-27 |
Family
ID=16514187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56205876A Granted JPS58106535A (ja) | 1981-12-19 | 1981-12-19 | レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58106535A (cg-RX-API-DMAC7.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117244A (ja) * | 1983-11-30 | 1985-06-24 | Fujitsu Ltd | パタ−ン形成方法 |
-
1981
- 1981-12-19 JP JP56205876A patent/JPS58106535A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58106535A (ja) | 1983-06-24 |
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