JPS6411303A - Lamination type semiconductor porcelain - Google Patents
Lamination type semiconductor porcelainInfo
- Publication number
- JPS6411303A JPS6411303A JP16834287A JP16834287A JPS6411303A JP S6411303 A JPS6411303 A JP S6411303A JP 16834287 A JP16834287 A JP 16834287A JP 16834287 A JP16834287 A JP 16834287A JP S6411303 A JPS6411303 A JP S6411303A
- Authority
- JP
- Japan
- Prior art keywords
- thickness
- internal electrodes
- 50mum
- semiconductor
- semiconductor porcelain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
- H01C7/021—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient formed as one or more layers or coatings
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
PURPOSE:To provide inexpensive formation of a lamination type semiconductor porcelain which is low in its resistance and good in its resistance temperature characteristic and has an ohmic contact, by making a porous layer 2mum to 50mum in thickness in order to compose an internal electrode. CONSTITUTION:A semiconductor porcelain is composed of PTC elements 1a to 1f laminated with internal electrodes 5... in between. The internal electrodes 5... are drawn alternately right and left, and they are connected with external electrodes 6, 6 on either right or left side. The PTC elements 1a to 1f are made of planar semiconductor ceramics whose chief ingredient is barium titanate. The internal electrodes 5... are manufactured by performing press formation of a single substance of a low-melting-point base metal or its alloy on porous layers of 2-50mum in thickness. If a thickness of each porous layer is smaller than 2mum, it is difficult to press the melted metal perfectly inside the layer. If the thickness is larger than 50mum on the other hand, the melted metal pressed at a time leaks outside upon the pulling of the semiconductor pocelain upward from the solution of the base metal and so the internal electrodes can not be uniformly formed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16834287A JPS6411303A (en) | 1987-07-06 | 1987-07-06 | Lamination type semiconductor porcelain |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16834287A JPS6411303A (en) | 1987-07-06 | 1987-07-06 | Lamination type semiconductor porcelain |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6411303A true JPS6411303A (en) | 1989-01-13 |
Family
ID=15866283
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16834287A Pending JPS6411303A (en) | 1987-07-06 | 1987-07-06 | Lamination type semiconductor porcelain |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6411303A (en) |
-
1987
- 1987-07-06 JP JP16834287A patent/JPS6411303A/en active Pending
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