JPS6410716A - Manufacture of piezoelectric transducer - Google Patents

Manufacture of piezoelectric transducer

Info

Publication number
JPS6410716A
JPS6410716A JP16487487A JP16487487A JPS6410716A JP S6410716 A JPS6410716 A JP S6410716A JP 16487487 A JP16487487 A JP 16487487A JP 16487487 A JP16487487 A JP 16487487A JP S6410716 A JPS6410716 A JP S6410716A
Authority
JP
Japan
Prior art keywords
electrode
metal
thin film
piezoelectric thin
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16487487A
Other languages
Japanese (ja)
Inventor
Hajime Miyajima
Keiichi Nakanishi
Gimin Kou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toko Inc
Original Assignee
Toko Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toko Inc filed Critical Toko Inc
Priority to JP16487487A priority Critical patent/JPS6410716A/en
Publication of JPS6410716A publication Critical patent/JPS6410716A/en
Pending legal-status Critical Current

Links

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

PURPOSE:To obtain a piezoelectric thin film with a few defects by forming an electrode of the alloy of specified metal and Al, and determining the content of said metal to be 0.1-5.0Wt.%. CONSTITUTION:The electrode 11 is formed on a substrate 10, and the piezoelectric thin film 12 is formed on the electrode 11. The electrode 11 is formed of a Me-Al alloy, and the Me consists of one or more kinds of metal, and its content is 0.1-5.0Wt.%. As metal material Me to be added to Al, one or more kinds of metal are selected from among Mn, Ni, Fe, Cu, Mg, Bi, Ca, Si, Sb, Be, Co, Ti, and Zn. Thus, the crystal structure of the piezoelectric thin film to grow on the electrode can be controlled, and the piezoelectric thin film with a few defects can be made to grow.
JP16487487A 1987-07-01 1987-07-01 Manufacture of piezoelectric transducer Pending JPS6410716A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16487487A JPS6410716A (en) 1987-07-01 1987-07-01 Manufacture of piezoelectric transducer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16487487A JPS6410716A (en) 1987-07-01 1987-07-01 Manufacture of piezoelectric transducer

Publications (1)

Publication Number Publication Date
JPS6410716A true JPS6410716A (en) 1989-01-13

Family

ID=15801560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16487487A Pending JPS6410716A (en) 1987-07-01 1987-07-01 Manufacture of piezoelectric transducer

Country Status (1)

Country Link
JP (1) JPS6410716A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128607A (en) * 1987-11-13 1989-05-22 Hitachi Ltd Surface acoustic wave device
JPH0340509A (en) * 1989-07-06 1991-02-21 Murata Mfg Co Ltd Bulk wave device
EP1628350A1 (en) * 2003-05-22 2006-02-22 Fujitsu Limited Piezoelectric device , its manufacturing method, and touch panel device
JP2006339840A (en) * 2005-05-31 2006-12-14 Kyocera Kinseki Corp Crystal resonator

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01128607A (en) * 1987-11-13 1989-05-22 Hitachi Ltd Surface acoustic wave device
JPH0340509A (en) * 1989-07-06 1991-02-21 Murata Mfg Co Ltd Bulk wave device
EP1628350A1 (en) * 2003-05-22 2006-02-22 Fujitsu Limited Piezoelectric device , its manufacturing method, and touch panel device
EP1628350A4 (en) * 2003-05-22 2009-12-02 Fujitsu Ltd Piezoelectric device , its manufacturing method, and touch panel device
JP2006339840A (en) * 2005-05-31 2006-12-14 Kyocera Kinseki Corp Crystal resonator

Similar Documents

Publication Publication Date Title
JPS5764596A (en) Heat mode recording material
JPS6468446A (en) Fe based amorphous alloy
JPS6410716A (en) Manufacture of piezoelectric transducer
EP0338682A3 (en) Method of strengthening metal material and apparatus therefor
JPS56147470A (en) Semiconductor device
JPS55141545A (en) Highly corrosion resistant ferrite stainless steel
JPS5647534A (en) Corrosion-resistant copper alloy and heat exchanger formed thereof
JPS548139A (en) Soldering material
JPS5295972A (en) Semiconductor element
JPS56123338A (en) Electrical contact material
JPS5723417B2 (en)
FR2355560A1 (en) PROCESS FOR PRODUCING PERFECT MONO-CRYSTALLINE GADOLINIUM-GALLIUM
Mayer et al. Review of the Known Effects of Trace Elements in Steels and Alloys Containing Ni
JPS648245A (en) Hard alloy
JPS57198614A (en) Magnetic recording tape
JPS56128696A (en) Nickel base covered arc electrode
JPS5669337A (en) Contact material
JPS5681645A (en) Age-hardening flute material
JPS6465240A (en) High corrosion-resistant amorphous alloy
JPS6443911A (en) Superconductive wire material
Watanabe et al. Metallic Material for Flutes
JPS5633447A (en) Amorphous alloy
EP0214080A3 (en) Reduction of twinning in directional recrystallization of nickel base superalloys
JPS55111184A (en) Reluctance unit and manufacturing method thereof
FR2162745A5 (en) Workable aluminium alloy - having predetermined electrical conductivity and tensile strength