JPS6410643A - Bonding method for semiconductor substrate - Google Patents

Bonding method for semiconductor substrate

Info

Publication number
JPS6410643A
JPS6410643A JP62166148A JP16614887A JPS6410643A JP S6410643 A JPS6410643 A JP S6410643A JP 62166148 A JP62166148 A JP 62166148A JP 16614887 A JP16614887 A JP 16614887A JP S6410643 A JPS6410643 A JP S6410643A
Authority
JP
Japan
Prior art keywords
bonding material
semiconductor substrate
bubbles
substrate
retaining base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62166148A
Other languages
Japanese (ja)
Inventor
Hiroshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP62166148A priority Critical patent/JPS6410643A/en
Publication of JPS6410643A publication Critical patent/JPS6410643A/en
Pending legal-status Critical Current

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To push out bubbles from bonding material when bubbles mix in the bonding material, and prevent effectively bubbles permeating into the bonding material, by pressing a semiconductor substrate in the state where the substrate is bent in the form of a partial sphere surface or in one direction, against a retaining base, via the bonding material. CONSTITUTION:Via bonding material 13, a semiconductor substrate 11 is pressed against a retaining base 12. At first, only a central part of the substrate is pressed against the retaining base 12. Then the vacuum state of a sucking member 14 is relaxed, and as the result, concentric circular ring parts of the semiconductor substrate 11 are pressed, in order, against the retaining substrate 12, by the effect of elastic restoring force of the semiconductor substrate 11. Therefore, even if bubbles are contained in the bonding material 13, they are pushed out in the form of concentric circles toward the outer periphery of the semiconductor substrate 11, and after all, bubbles are discharged from the bonding material 13. The pressing force at the central part of the semiconductor substrate 11 which is applied first to the retaining base 12 is kept, so that bubbles once discharged do not enter again the bonding material 13.
JP62166148A 1987-07-02 1987-07-02 Bonding method for semiconductor substrate Pending JPS6410643A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166148A JPS6410643A (en) 1987-07-02 1987-07-02 Bonding method for semiconductor substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166148A JPS6410643A (en) 1987-07-02 1987-07-02 Bonding method for semiconductor substrate

Publications (1)

Publication Number Publication Date
JPS6410643A true JPS6410643A (en) 1989-01-13

Family

ID=15825945

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166148A Pending JPS6410643A (en) 1987-07-02 1987-07-02 Bonding method for semiconductor substrate

Country Status (1)

Country Link
JP (1) JPS6410643A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964978A (en) * 1997-03-31 1999-10-12 Shin-Etsu Handotai Co., Ltd. Method and apparatus for adhesion of semiconductor substrate
JP2001179578A (en) * 1999-12-28 2001-07-03 Shin Etsu Handotai Co Ltd Wafer polishing method and wafer polishing device
JP2002368023A (en) * 2001-06-06 2002-12-20 Hitachi Ltd Method of manufacturing semiconductor device
US6639392B2 (en) 2001-08-08 2003-10-28 Hitachi, Ltd. Charged particle measuring device and measuring method thereof
JP2005150311A (en) * 2003-11-13 2005-06-09 Nec Machinery Corp Chip mounting method and apparatus thereof
JP2019106493A (en) * 2017-12-13 2019-06-27 第一精工株式会社 Method for sticking adhesive tape to substrate and device for sticking adhesive tape to substrate

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964978A (en) * 1997-03-31 1999-10-12 Shin-Etsu Handotai Co., Ltd. Method and apparatus for adhesion of semiconductor substrate
JP2001179578A (en) * 1999-12-28 2001-07-03 Shin Etsu Handotai Co Ltd Wafer polishing method and wafer polishing device
WO2001047664A1 (en) * 1999-12-28 2001-07-05 Shin-Etsu Handotai Co., Ltd. Wafer polishing method and wafer polishing device
US6764392B2 (en) 1999-12-28 2004-07-20 Shin-Etsu Handotai Co., Ltd. Wafer polishing method and wafer polishing device
JP2002368023A (en) * 2001-06-06 2002-12-20 Hitachi Ltd Method of manufacturing semiconductor device
US6639392B2 (en) 2001-08-08 2003-10-28 Hitachi, Ltd. Charged particle measuring device and measuring method thereof
US6774638B2 (en) 2001-08-08 2004-08-10 Hitachi, Ltd. Charged particle measuring device and measuring method thereof
JP2005150311A (en) * 2003-11-13 2005-06-09 Nec Machinery Corp Chip mounting method and apparatus thereof
JP2019106493A (en) * 2017-12-13 2019-06-27 第一精工株式会社 Method for sticking adhesive tape to substrate and device for sticking adhesive tape to substrate

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