JPS6410635A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6410635A JPS6410635A JP16616887A JP16616887A JPS6410635A JP S6410635 A JPS6410635 A JP S6410635A JP 16616887 A JP16616887 A JP 16616887A JP 16616887 A JP16616887 A JP 16616887A JP S6410635 A JPS6410635 A JP S6410635A
- Authority
- JP
- Japan
- Prior art keywords
- plated layer
- gold
- individual
- tin
- lead parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
PURPOSE:To simplify a tin-plating process and a gold-plating process for individual leads without deteriorating individual bonding parts and the performance of connections by a method wherein a tin-plated layer is formed on the lower side and a gold-plated layer is formed on its upper side of an inner lead part and an outer lead part of the individual leads. CONSTITUTION:In a semiconductor device 10 where a semiconductor chip 6 is bonded via gold bumps 6a to inner lead parts 1a at one end of two or more leads 1 formed on the surface of a synthetic resin tape 2, a tin-plated layer 3 and a gold-plated layer 4 are formed both at the inner lead parts 1a and at outer lead parts 1b of the individual leads 1 in such a way that the tin-plated layer 3 is situated at the lower side and that the gold-plated layer 4 is situated at the upper side. By this setup, the inner lead parts 1a can be bonded to the bumps 6a at a comparatively low temperature, with good electrical contact and firmly. The individual outer lead parts 1b can be bonded and connected to individual pattern wires 11a and 12a by using an anisotropically conductive adhesive with a low connection resistance value and stably against a temperature change.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16616887A JPS6410635A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16616887A JPS6410635A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6410635A true JPS6410635A (en) | 1989-01-13 |
Family
ID=15826332
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16616887A Pending JPS6410635A (en) | 1987-07-02 | 1987-07-02 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6410635A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102250A (en) * | 1991-10-11 | 1993-04-23 | Hitachi Cable Ltd | Tape carrier |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152961A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Semiconductor device |
-
1987
- 1987-07-02 JP JP16616887A patent/JPS6410635A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152961A (en) * | 1978-05-24 | 1979-12-01 | Hitachi Ltd | Semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102250A (en) * | 1991-10-11 | 1993-04-23 | Hitachi Cable Ltd | Tape carrier |
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