JPS6410091B2 - - Google Patents

Info

Publication number
JPS6410091B2
JPS6410091B2 JP55184586A JP18458680A JPS6410091B2 JP S6410091 B2 JPS6410091 B2 JP S6410091B2 JP 55184586 A JP55184586 A JP 55184586A JP 18458680 A JP18458680 A JP 18458680A JP S6410091 B2 JPS6410091 B2 JP S6410091B2
Authority
JP
Japan
Prior art keywords
melt
compound semiconductor
vapor pressure
heat treatment
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55184586A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57107025A (en
Inventor
Tsutomu Tsuji
Hideo Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP55184586A priority Critical patent/JPS57107025A/ja
Publication of JPS57107025A publication Critical patent/JPS57107025A/ja
Publication of JPS6410091B2 publication Critical patent/JPS6410091B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP55184586A 1980-12-25 1980-12-25 Heat treatment of compound semiconductor Granted JPS57107025A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55184586A JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55184586A JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS57107025A JPS57107025A (en) 1982-07-03
JPS6410091B2 true JPS6410091B2 (enFirst) 1989-02-21

Family

ID=16155793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55184586A Granted JPS57107025A (en) 1980-12-25 1980-12-25 Heat treatment of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57107025A (enFirst)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63283020A (ja) * 1987-05-14 1988-11-18 Sanyo Electric Co Ltd 熱処理方法
KR100407955B1 (ko) * 2001-05-29 2003-12-03 엘지전자 주식회사 퓨전 기판 위에 ＧａＡｓ을 형성하는 방법

Also Published As

Publication number Publication date
JPS57107025A (en) 1982-07-03

Similar Documents

Publication Publication Date Title
US3316130A (en) Epitaxial growth of semiconductor devices
US4470192A (en) Method of selected area doping of compound semiconductors
US4948751A (en) Moelcular beam epitaxy for selective epitaxial growth of III - V compound semiconductor
US3762968A (en) Method of forming region of a desired conductivity type in the surface of a semiconductor body
US4159215A (en) Droplet migration doping using reactive carriers and dopants
JPS6410091B2 (enFirst)
US4135952A (en) Process for annealing semiconductor materials
US3397094A (en) Method of changing the conductivity of vapor deposited gallium arsenide by the introduction of water into the vapor deposition atmosphere
JPS6130030A (ja) 多元素半導体のアニ−ル方法
JP2004519837A (ja) エピタキシャルウェハ装置
US4597825A (en) Intermediate passivation and cleaning of compound semiconductor surfaces
US4717443A (en) Mass transport of indium phosphide
US4302278A (en) GaAs Crystal surface passivation method
US4198247A (en) Sealant films for materials having high intrinsic vapor pressure
US3669763A (en) Traveling solvent method of growing silicon carbide crystals and junctions utilizing yttrium as the solvent
US2835613A (en) Method of surface-treating semi-conductors
Kerr et al. Antimony passivation of molecular‐beam epitaxially grown GaAs surfaces
US3007819A (en) Method of treating semiconductor material
JPH022840B2 (enFirst)
JPS58175828A (ja) 横型炉金属溶液シ−ルによるキャップレス・アニ−ル法
JPH026385A (ja) 薄膜の形成方法及び装置
JPS5957989A (ja) 液相エピタキシヤル成長方法
Williams et al. Rapid annealing of GaAs and related compounds
US3447977A (en) Method of producing semiconductor members
JPH0143454B2 (enFirst)