JPS6397850U - - Google Patents

Info

Publication number
JPS6397850U
JPS6397850U JP19233986U JP19233986U JPS6397850U JP S6397850 U JPS6397850 U JP S6397850U JP 19233986 U JP19233986 U JP 19233986U JP 19233986 U JP19233986 U JP 19233986U JP S6397850 U JPS6397850 U JP S6397850U
Authority
JP
Japan
Prior art keywords
heating element
gas
predetermined temperature
gas detection
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19233986U
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP19233986U priority Critical patent/JPS6397850U/ja
Publication of JPS6397850U publication Critical patent/JPS6397850U/ja
Pending legal-status Critical Current

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Non-Adjustable Resistors (AREA)

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第1図〜第3図は本考案の一実施例を示すもの
で、第1図は一部を省略して平面的に示す構成図
、第2図は第1図の−線断面による構成図、
第3図は発熱体の抵抗・温度特性を示すグラフ、
第4図は従来例を示すもので第2図に対応する図
、第5図は第4図に示すガス検知素子の斜視図、
第6図および第7図は他の従来例を示すもので、
それぞれ第4図および第5図に対応する図である
。 11……ガス検知素子、12……発熱体、13
……電極、14……絶縁性被膜、15……半導体
被膜。
1 to 3 show one embodiment of the present invention, in which FIG. 1 is a planar configuration diagram with some parts omitted, and FIG. 2 is a configuration diagram taken in cross section along the - line in FIG. ,
Figure 3 is a graph showing the resistance and temperature characteristics of the heating element.
FIG. 4 shows a conventional example and corresponds to FIG. 2, and FIG. 5 is a perspective view of the gas detection element shown in FIG. 4.
6 and 7 show other conventional examples,
FIG. 5 is a diagram corresponding to FIG. 4 and FIG. 5, respectively. 11... Gas detection element, 12... Heating element, 13
... Electrode, 14 ... Insulating film, 15 ... Semiconductor film.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 所定温度に加熱される発熱体の表面に半導体被
膜を設け、前記所定温度域での半導体被膜のガス
接触による電気伝導度増大効果によりガス検知を
行なうガス検知素子において、前記発熱体を正の
抵抗・温度特性を有するセラミツクスで構成し、
その発熱体に電極を接続するとともに、その発熱
体と半導体被膜との間を絶縁性被膜で絶縁したこ
とを特徴とするガス検知素子。
In a gas detection element, a semiconductor coating is provided on the surface of a heating element that is heated to a predetermined temperature, and gas detection is performed by the effect of increasing electrical conductivity due to gas contact of the semiconductor coating in the predetermined temperature range.・Constructed from ceramics with temperature characteristics,
A gas sensing element characterized in that an electrode is connected to the heating element, and the heating element and the semiconductor film are insulated by an insulating film.
JP19233986U 1986-12-16 1986-12-16 Pending JPS6397850U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19233986U JPS6397850U (en) 1986-12-16 1986-12-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19233986U JPS6397850U (en) 1986-12-16 1986-12-16

Publications (1)

Publication Number Publication Date
JPS6397850U true JPS6397850U (en) 1988-06-24

Family

ID=31147325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19233986U Pending JPS6397850U (en) 1986-12-16 1986-12-16

Country Status (1)

Country Link
JP (1) JPS6397850U (en)

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