JPS6397850U - - Google Patents
Info
- Publication number
- JPS6397850U JPS6397850U JP19233986U JP19233986U JPS6397850U JP S6397850 U JPS6397850 U JP S6397850U JP 19233986 U JP19233986 U JP 19233986U JP 19233986 U JP19233986 U JP 19233986U JP S6397850 U JPS6397850 U JP S6397850U
- Authority
- JP
- Japan
- Prior art keywords
- heating element
- gas
- predetermined temperature
- gas detection
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Description
第1図〜第3図は本考案の一実施例を示すもの
で、第1図は一部を省略して平面的に示す構成図
、第2図は第1図の−線断面による構成図、
第3図は発熱体の抵抗・温度特性を示すグラフ、
第4図は従来例を示すもので第2図に対応する図
、第5図は第4図に示すガス検知素子の斜視図、
第6図および第7図は他の従来例を示すもので、
それぞれ第4図および第5図に対応する図である
。
11……ガス検知素子、12……発熱体、13
……電極、14……絶縁性被膜、15……半導体
被膜。
1 to 3 show one embodiment of the present invention, in which FIG. 1 is a planar configuration diagram with some parts omitted, and FIG. 2 is a configuration diagram taken in cross section along the - line in FIG. ,
Figure 3 is a graph showing the resistance and temperature characteristics of the heating element.
FIG. 4 shows a conventional example and corresponds to FIG. 2, and FIG. 5 is a perspective view of the gas detection element shown in FIG. 4.
6 and 7 show other conventional examples,
FIG. 5 is a diagram corresponding to FIG. 4 and FIG. 5, respectively. 11... Gas detection element, 12... Heating element, 13
... Electrode, 14 ... Insulating film, 15 ... Semiconductor film.
Claims (1)
膜を設け、前記所定温度域での半導体被膜のガス
接触による電気伝導度増大効果によりガス検知を
行なうガス検知素子において、前記発熱体を正の
抵抗・温度特性を有するセラミツクスで構成し、
その発熱体に電極を接続するとともに、その発熱
体と半導体被膜との間を絶縁性被膜で絶縁したこ
とを特徴とするガス検知素子。 In a gas detection element, a semiconductor coating is provided on the surface of a heating element that is heated to a predetermined temperature, and gas detection is performed by the effect of increasing electrical conductivity due to gas contact of the semiconductor coating in the predetermined temperature range.・Constructed from ceramics with temperature characteristics,
A gas sensing element characterized in that an electrode is connected to the heating element, and the heating element and the semiconductor film are insulated by an insulating film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19233986U JPS6397850U (en) | 1986-12-16 | 1986-12-16 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19233986U JPS6397850U (en) | 1986-12-16 | 1986-12-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6397850U true JPS6397850U (en) | 1988-06-24 |
Family
ID=31147325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP19233986U Pending JPS6397850U (en) | 1986-12-16 | 1986-12-16 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6397850U (en) |
-
1986
- 1986-12-16 JP JP19233986U patent/JPS6397850U/ja active Pending
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