JPS6397237U - - Google Patents
Info
- Publication number
- JPS6397237U JPS6397237U JP19193786U JP19193786U JPS6397237U JP S6397237 U JPS6397237 U JP S6397237U JP 19193786 U JP19193786 U JP 19193786U JP 19193786 U JP19193786 U JP 19193786U JP S6397237 U JPS6397237 U JP S6397237U
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- semiconductor substrate
- conductive layer
- semiconductor device
- penetrating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図はこの考案による半導体装置の一実施例
の主要部の断面図、第２図は第１図の半導体装置
の検査方法を示す図、第３図は従来の半導体装置
の一部分の断面図である。
１…半導体基板、２…絶縁被膜、３…導電層、
４…検査用電極。
FIG. 1 is a sectional view of the main parts of an embodiment of a semiconductor device according to this invention, FIG. 2 is a diagram showing an inspection method for the semiconductor device of FIG. 1, and FIG. 3 is a sectional view of a part of a conventional semiconductor device. It is. 1... Semiconductor substrate, 2... Insulating coating, 3... Conductive layer,
4...Testing electrode.
Claims (1)
縁被膜と、該絶縁被膜上に形成された導電層と、
該導電層から離れた位置に上記絶縁被膜を貫通し
て上記半導体基板にオーム接触して設けられた検
査用電極とからなる半導体装置。 a semiconductor substrate, an insulating film formed on the semiconductor substrate, a conductive layer formed on the insulating film,
A semiconductor device comprising: a test electrode provided at a position apart from the conductive layer, penetrating the insulating film and in ohmic contact with the semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19193786U JPS6397237U (en) | 1986-12-12 | 1986-12-12 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19193786U JPS6397237U (en) | 1986-12-12 | 1986-12-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6397237U true JPS6397237U (en) | 1988-06-23 |
Family
ID=31146548
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19193786U Pending JPS6397237U (en) | 1986-12-12 | 1986-12-12 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6397237U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005321294A (en) * | 2004-05-10 | 2005-11-17 | Mitsubishi Electric Corp | Method for manufacturing thermal flow detection device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840657A (en) * | 1971-10-01 | 1973-06-14 | ||
| JPS56153745A (en) * | 1980-04-28 | 1981-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Method for defect evaluation on insulative thin film |
-
1986
- 1986-12-12 JP JP19193786U patent/JPS6397237U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4840657A (en) * | 1971-10-01 | 1973-06-14 | ||
| JPS56153745A (en) * | 1980-04-28 | 1981-11-27 | Nippon Telegr & Teleph Corp <Ntt> | Method for defect evaluation on insulative thin film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005321294A (en) * | 2004-05-10 | 2005-11-17 | Mitsubishi Electric Corp | Method for manufacturing thermal flow detection device |
| JP4515143B2 (en) * | 2004-05-10 | 2010-07-28 | 三菱電機株式会社 | Method for manufacturing thermal flow rate detection element |
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