JPS6424861U - - Google Patents
Info
- Publication number
- JPS6424861U JPS6424861U JP11902287U JP11902287U JPS6424861U JP S6424861 U JPS6424861 U JP S6424861U JP 11902287 U JP11902287 U JP 11902287U JP 11902287 U JP11902287 U JP 11902287U JP S6424861 U JPS6424861 U JP S6424861U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating film
- contact hole
- shot
- opening area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図は、本考案による一実施例を示す断面図
、第２図は本考案の他の実施例を示す断面図、第
３図は従来装置の断面図である。
１……半導体基板、２……活性層、３……コン
タクトホール、４……シヨツトキ電極、１０……
絶縁膜、１１……第１層絶縁膜、１２……第２層
絶縁膜、１３……第３層絶縁膜、１４……第４層
絶縁膜。
FIG. 1 is a sectional view showing one embodiment of the present invention, FIG. 2 is a sectional view showing another embodiment of the present invention, and FIG. 3 is a sectional view of a conventional device. DESCRIPTION OF SYMBOLS 1...Semiconductor substrate, 2...Active layer, 3...Contact hole, 4...Shot electrode, 10...
Insulating film, 11...First layer insulating film, 12... Second layer insulating film, 13... Third layer insulating film, 14... Fourth layer insulating film.
Claims (1)
膜と、この絶縁膜に設けたコンタクトホールを介
して、上記半導体基板にシヨツトキ接合するシヨ
ツトキ電極とを備えた半導体装置において、上記
絶縁膜は少なくとも２層からなり、上記コンタク
トホールにおける上記絶縁膜の表面側の開孔面積
は、上記半導体基板側の開孔面積より大なること
を特徴とする半導体装置。 In a semiconductor device comprising a semiconductor substrate, an insulating film provided on the semiconductor substrate, and a shot electrode that is shot-bonded to the semiconductor substrate through a contact hole provided in the insulation film, the insulating film includes at least two 1. A semiconductor device comprising a layer, wherein an opening area of the contact hole on the surface side of the insulating film is larger than an opening area on the semiconductor substrate side.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11902287U JPS6424861U (en) | 1987-08-03 | 1987-08-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11902287U JPS6424861U (en) | 1987-08-03 | 1987-08-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6424861U true JPS6424861U (en) | 1989-02-10 |
Family
ID=31363888
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11902287U Pending JPS6424861U (en) | 1987-08-03 | 1987-08-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6424861U (en) |
-
1987
- 1987-08-03 JP JP11902287U patent/JPS6424861U/ja active Pending