JPS6396982A - Optical integrated circuit - Google Patents
Optical integrated circuitInfo
- Publication number
- JPS6396982A JPS6396982A JP24340586A JP24340586A JPS6396982A JP S6396982 A JPS6396982 A JP S6396982A JP 24340586 A JP24340586 A JP 24340586A JP 24340586 A JP24340586 A JP 24340586A JP S6396982 A JPS6396982 A JP S6396982A
- Authority
- JP
- Japan
- Prior art keywords
- light
- diffraction grating
- active layer
- substrate
- irradiated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 230000010355 oscillation Effects 0.000 abstract description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 7
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 abstract description 3
- 238000006073 displacement reaction Methods 0.000 abstract 2
- 238000005253 cladding Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/185—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL]
- H01S5/187—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only horizontal cavities, e.g. horizontal cavity surface-emitting lasers [HCSEL] using Bragg reflection
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、光ディスク、光情報処理等のピックアップと
して用いることができる光集積回路に関するものである
。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical integrated circuit that can be used as a pickup for optical discs, optical information processing, etc.
従来の技術
現在、光デイスク用ピックアップは、微小光学素子で構
成されているが、軽量小型化2作製プロセスの簡単化の
ため、光集積ピックアップが提案されている(参考文献
、裏地、信学技報、0QE85−72.P、3G)。Conventional technologyCurrently, optical disk pickups are composed of microscopic optical elements, but optical integrated pickups have been proposed to reduce weight and size2 and simplify the manufacturing process (References, Linings, IEICE Report, 0QE85-72.P, 3G).
第3図に光集積ピックアップの概略図を示す。FIG. 3 shows a schematic diagram of the optical integrated pickup.
St基板1上に形成された誘電体先導波路2を半導体レ
ーザ3から出射した光が伝搬し、フォーカシンググレー
ティングカプラ4により、集光性の光ビームが外部に放
射され、光ディスク6に照射される。そしてディスクの
表面で反射された光は、グレーティングフォーカシング
レンズ4に戻す、再び先導波路全光源方゛向に伝搬する
。そして、光導波路表面に設置されたフォーカシングビ
ームスプリッタ−6によシ伝搬方向が変化され、2対の
受光素子7に集光される。Light emitted from a semiconductor laser 3 propagates through a dielectric guide waveguide 2 formed on an St substrate 1 , and a focusing grating coupler 4 emits a condensing light beam to the outside, which is irradiated onto an optical disk 6 . The light reflected by the surface of the disk returns to the grating focusing lens 4 and propagates again toward the entire light source of the leading waveguide. Then, the propagation direction of the light is changed by a focusing beam splitter 6 installed on the surface of the optical waveguide, and the light is focused on two pairs of light receiving elements 7.
発明が解決しようとする問題点
上記従来の技術で述べた光集積ピックアップは、光学系
の小型化、軽量化に有効であるが、ディスク面からの反
射光が半導体レーザに帰還されると、戻シ光の影響によ
って半導体レーザの発振スペクトルのマルチモード化あ
るいはモードホッピングが引き起こされ、集光スポット
もマルチ化や位置飛びを起こし、トラッキング不良の原
因となっていた。また、ハイブリッド構成であるため、
結合効率が低かった。 ゛
問題点を解決するための手段
本発明の光集積回路は、半導体基板上に少なくとも活性
層を含む活性領域と回折格子を有する二次元光導波路が
集積化された構造を備え、前記回折格子は前記活性層で
の発光の7部を再び前記活性層に帰還して分布反射形半
導体レーザを構成し、前記発光の一部を前、記基板と垂
直方向に放出する手段を有する構成であり、前記回折格
子を、前記活性層と前記二次元光導波路の結合部を中心
とする同心円状としてもよいし、また、前記二次元光導
波路が活性領域と回折格子の間にレンズ機能を果たす領
域を有し、前記活性領域での発光を平行光として回折格
子に導波する構成としてもよい。Problems to be Solved by the Invention The optical integrated pickup described in the above-mentioned prior art is effective in reducing the size and weight of the optical system, but when the reflected light from the disk surface is returned to the semiconductor laser, The influence of the beam causes the oscillation spectrum of the semiconductor laser to become multi-mode or mode hopping, and the focused spot also becomes multi-mode or jumps in position, causing tracking failure. Also, since it is a hybrid configuration,
Coupling efficiency was low.゛Means for Solving the Problems The optical integrated circuit of the present invention has a structure in which an active region including at least an active layer and a two-dimensional optical waveguide having a diffraction grating are integrated on a semiconductor substrate, and the diffraction grating is Seven parts of the light emitted from the active layer are returned to the active layer to form a distributed reflection semiconductor laser, and a part of the light emitted from the active layer is configured to be emitted in a direction perpendicular to the substrate; The diffraction grating may have a concentric shape centered on the coupling portion between the active layer and the two-dimensional optical waveguide, and the two-dimensional optical waveguide may have a region between the active region and the diffraction grating that functions as a lens. The structure may be such that the light emitted from the active region is guided to the diffraction grating as parallel light.
作 用
本発明は、上記した構成により、活性層での発光が回折
格子によって帰還されることによりレーザ発振を行なう
いわゆる分布反射形レーザとなっている。前記活性層で
の発光の一部は回折格子によって基板に垂直方向に効率
良く放出される。この半導体レーザは、モードホッピン
グのない安定な単−縦モード発振であるため、基板外部
に放出された光を集光したスポットは位置ずれすること
なく安定な動作を行なう。Operation The present invention is a so-called distributed reflection type laser that performs laser oscillation by feeding back light emitted from the active layer by a diffraction grating due to the above-described configuration. A portion of the light emitted from the active layer is efficiently emitted by the diffraction grating in a direction perpendicular to the substrate. Since this semiconductor laser emits stable single-longitudinal mode oscillation without mode hopping, the spot where the light emitted to the outside of the substrate is focused performs stable operation without positional deviation.
実施例
第1図は本発明の第1の実施例の断面図を示t11はn
−G aA s基板、12はn −AeGaAsクラ
ッド層であシ、u−GaAs、l’iI性層13 、
p−AlGaAsクラッド層14、p”−GaAsキャ
ップ層15を有する領域16が活性領域である。本実施
例では、活性領域16は埋込み構造とした。17は回折
格子、18は二次元光導波路である。回折格子17は、
活性領域16と光導波路18の結合部を中心とした同一
ピッチの同心円状に形成された二次の回路格子である。Embodiment FIG. 1 shows a sectional view of the first embodiment of the present invention. t11 is n.
-GaAs substrate, 12 is n-AeGaAs cladding layer, u-GaAs, l'iI layer 13,
A region 16 having a p-AlGaAs cladding layer 14 and a p"-GaAs cap layer 15 is an active region. In this example, the active region 16 has a buried structure. Reference numeral 17 is a diffraction grating, and 18 is a two-dimensional optical waveguide. The diffraction grating 17 is
This is a secondary circuit lattice formed in concentric circles with the same pitch centered on the coupling portion between the active region 16 and the optical waveguide 18.
活性領域16での発光は二次元光導波路18に結合して
導波し、回折格子17によってピッチで決まる特定の波
長の光のみが再び活性領域16に帰還され、その波長で
単一モード発振を行う。活性領域16での発光の特定波
長の光の一部は回折格子17によって、基板11と垂直
方向に放出される。本実施例では安定な単一モード発振
をしているため、外部に放出された光を集光しても波長
変化による集光スポットの位置ずれが生じることなく安
定な動作が得られた。The light emitted from the active region 16 is coupled to and guided by the two-dimensional optical waveguide 18, and only the light of a specific wavelength determined by the pitch is fed back to the active region 16 by the diffraction grating 17, causing single mode oscillation at that wavelength. conduct. A portion of the light of a specific wavelength emitted by the active region 16 is emitted by the diffraction grating 17 in a direction perpendicular to the substrate 11 . In this example, stable single-mode oscillation was performed, so even when the light emitted to the outside was focused, stable operation was obtained without any positional shift of the focused spot due to wavelength changes.
第2図は、本発明の第2の実施例の断面の斜視図である
。二次元光導波路18は、活性領域16と回折格子2o
の間に、GaAs+のレンズ機能を果たす領域21を有
している。本実施例では、活性領域16での発光は、二
次元光導波路18に入射して広がるが、レンズ領域21
で平行光となって回折格子まで導波する。回折格子20
は1次回折光を活性領域へ帰還し、21次回折光を基板
11と垂直方向に放出するため直線状に形成されている
。FIG. 2 is a cross-sectional perspective view of a second embodiment of the invention. The two-dimensional optical waveguide 18 includes an active region 16 and a diffraction grating 2o.
In between, there is a region 21 that functions as a GaAs+ lens. In this embodiment, the light emitted from the active region 16 enters the two-dimensional optical waveguide 18 and spreads, but the lens region 21
It becomes parallel light and is guided to the diffraction grating. Diffraction grating 20
is formed in a straight line in order to return the first-order diffracted light to the active region and emit the twenty-first-order diffracted light in a direction perpendicular to the substrate 11.
本実施例のようにレンズ機能を果たす領域を回折格子は
、作表が容易である直線状のものでよく、歩留も向上す
る。As in this embodiment, the diffraction grating for the area that functions as a lens may be a linear one that is easy to tabulate, and the yield is also improved.
上記2つの実施例では、G a A a系の半導体を用
いたが欲する波長に応じて異なる材料を用いてもよいし
、先導波路としては誘電体材料を用いてもよい。In the above two embodiments, a G a A a semiconductor is used, but a different material may be used depending on the desired wavelength, and a dielectric material may be used as the guide waveguide.
発明の効果
以上述べてきたように本発明は、回折格子が活性層での
発光を再び活性層に帰還する分布反射器となってお)、
回折格子の周期に対応した特定の波長で単一モード発振
を行なう。またこの回折格子は、発光を外部に放出する
カプラともなっており、効率良く出力を取シ出すことが
できる。単一モード発振であるため出力を集光した場合
、スポットが単一であシ、モードホップによる位置ずれ
も生じない。Effects of the Invention As described above, in the present invention, the diffraction grating serves as a distributed reflector that returns light emitted from the active layer to the active layer.
Single mode oscillation is performed at a specific wavelength corresponding to the period of the diffraction grating. This diffraction grating also functions as a coupler that emits light to the outside, allowing efficient output. Since it is a single mode oscillation, when the output is focused, the spot is single and there is no position shift due to mode hopping.
第1図は本発明の第1の実施例の光集積回路の断面図、
第2図は本発明の第2の実施例の光集積回路の一部断面
で示す斜視図、第3図は従来の光集積回路の斜視図であ
る。
11゛・・・・・・半導体基板、13・・・・・・活性
層、1e・・・・・・活性領域、17,20・・・・・
・回折格子、18・・・・・・二次元光導波路、21・
・・・・・レンズ領域。
代理人の氏名 弁理士 中 尾 敏 男 ほか1名+1
−−一↑卑1本基猥
イa−:−シメζう【−プピニ8路
第2図FIG. 1 is a cross-sectional view of an optical integrated circuit according to a first embodiment of the present invention;
FIG. 2 is a partially sectional perspective view of an optical integrated circuit according to a second embodiment of the present invention, and FIG. 3 is a perspective view of a conventional optical integrated circuit. 11゛... Semiconductor substrate, 13... Active layer, 1e... Active region, 17, 20...
・Diffraction grating, 18... Two-dimensional optical waveguide, 21.
...Lens area. Name of agent: Patent attorney Toshio Nakao and 1 other person +1
--1↑base1 basic obscene a-:-shimeζU [-Pupini 8th 2nd figure
Claims (3)
域と、回折格子を有する二次元光導波路が集積化された
構造を備え、前記回折格子は前記活性層での発光の一部
を再び前記活性層に帰還して、分布反射形半導体レーザ
を構成し、前記発光の一部を前記基板と垂直な方向に放
出する手段を有してなる光集積回路。(1) A structure in which an active region including at least an active layer and a two-dimensional optical waveguide having a diffraction grating are integrated on a semiconductor substrate, and the diffraction grating redirects a part of the light emitted from the active layer to the An optical integrated circuit comprising means for returning part of the emitted light to an active layer to constitute a distributed reflection semiconductor laser and emitting part of the emitted light in a direction perpendicular to the substrate.
元光導波路との結合部を中心とした同心円状に形成され
ている特許請求の範囲第1項記載の光集積回路。(2) The optical integrated circuit according to claim 1, wherein the diffraction grating on the two-dimensional optical waveguide is formed concentrically with the coupling portion between the active layer and the two-dimensional optical waveguide as the center.
ズ機能を果たす領域を有し、前記活性領域での発光を平
行光として回折格子に導波する特許請求の範囲第1項記
載の光集積回路。(3) The two-dimensional optical waveguide has a region between the active region and the diffraction grating that functions as a lens, and the light emitted from the active region is guided to the diffraction grating as parallel light. Optical integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24340586A JPS6396982A (en) | 1986-10-14 | 1986-10-14 | Optical integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24340586A JPS6396982A (en) | 1986-10-14 | 1986-10-14 | Optical integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6396982A true JPS6396982A (en) | 1988-04-27 |
Family
ID=17103370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP24340586A Pending JPS6396982A (en) | 1986-10-14 | 1986-10-14 | Optical integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6396982A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11262605B2 (en) * | 2017-08-31 | 2022-03-01 | Lightwave Logic Inc. | Active region-less polymer modulator integrated on a common PIC platform and method |
-
1986
- 1986-10-14 JP JP24340586A patent/JPS6396982A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11262605B2 (en) * | 2017-08-31 | 2022-03-01 | Lightwave Logic Inc. | Active region-less polymer modulator integrated on a common PIC platform and method |
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