JPS6396968A - Manufacture of semiconductor photodetector - Google Patents
Manufacture of semiconductor photodetectorInfo
- Publication number
- JPS6396968A JPS6396968A JP61243641A JP24364186A JPS6396968A JP S6396968 A JPS6396968 A JP S6396968A JP 61243641 A JP61243641 A JP 61243641A JP 24364186 A JP24364186 A JP 24364186A JP S6396968 A JPS6396968 A JP S6396968A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- inp
- ingaas
- band
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000031700 light absorption Effects 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 9
- 230000003287 optical effect Effects 0.000 abstract description 8
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体受光素子に関し、特に１〜１．６μｍ
帯領域において高性能を有するアバランシェ増倍型受光
素子の製造方法に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor light receiving element, particularly a semiconductor light receiving element with a diameter of 1 to 1.6 μm.
The present invention relates to a method of manufacturing an avalanche multiplication type light receiving element having high performance in a band region.
従来、１〜１．６μｍ帯の光通信用半導体受光素子とし
てＩｎＰ基板上に格子整合したＩｎｏ−５ｓＧ ａ ０
．４７Ａ ８層（以下Ｉ ｎＧａＡｓ層と略す）を光吸
収層とする受光素子や光伝導素子が知られている。Conventionally, Ino-5sG a 0 lattice-matched on an InP substrate has been used as a semiconductor photodetector for optical communication in the 1-1.6 μm band.
．． 2. Description of the Related Art A light-receiving element and a photoconductive element having a 47A 8 layer (hereinafter abbreviated as an InGaAs layer) as a light absorption layer are known.
特に、この中でアバランシェ増倍型受光素子は、アバラ
ンシェ増倍作用による内部利得効果及び高速応答を有す
る点で長距離光通信用として注目されている。第４図は
、従来のアバランシェ増倍型素子の一般的な構造例を示
す断面図である。In particular, avalanche multiplication type light receiving elements are attracting attention for use in long-distance optical communications because they have an internal gain effect due to avalanche multiplication and high-speed response. FIG. 4 is a cross-sectional view showing a general structural example of a conventional avalanche multiplication type element.
ここで、層構造としてはｎ型ＩｎＰ基板１上に、ｎ型Ｉ
ｎＰバッファ層２．ｎ型１ ｎＧａＡｓＧａＡｓ光吸収
型３ｎＰ増倍層５．ｎ型キャップ層６から成り立ってい
る。この様な層構造において受光部であるＰ型頭域７．
ガードリング部であるＰ壁領域８を図の様に形成する事
によってアバランシェ増倍型受光素子の基本構造が得ら
れる。基本的な原理としては、入射光が光吸収層Ｉ ｎ
ＧａＡｓ層３で吸収される事により電子と正孔が発生し
、逆バイアス印加による電界により正孔がＩｎＰ増倍層
５に注入され、さらにイオン化によるアバランシェ増倍
により内部利得が得られることになる。Here, as a layer structure, n-type I
nP buffer layer 2. n-type 1 nGaAsGaAs light absorption type 3nP multiplication layer5. It consists of an n-type cap layer 6. In such a layered structure, a P-shaped head area 7 which is a light receiving part is formed.
By forming the P wall region 8, which is a guard ring portion, as shown in the figure, the basic structure of an avalanche multiplication type light receiving element is obtained. The basic principle is that the incident light is absorbed by the light absorption layer I n
Electrons and holes are generated by being absorbed by the GaAs layer 3, and the holes are injected into the InP multiplication layer 5 by the electric field applied with a reverse bias, and internal gain is obtained by avalanche multiplication due to ionization. .
上述した従来のアバランシェ増倍型受光素子の光応答特
性に影響を与えるものとして、Ｉ ｎＧａＡｓ層３とＩ
ｎＰ層５の価電子帯側の大きな不連続性（エネルギーに
して０．３８５ｅＶ程度）がある、これは、光吸収層で
発生した正孔がＩｎＰ増倍層に注入される場合に界面近
傍でトラップされ光応答において遅い成分となる。この
為、一般的には、Ｉ ｎＧａＡｓ層３とＩｎＰ層５の間
にＩｎＧａＡｓＰｎＧａＡｓ層３により価電子帯の不連
続性を緩和する工夫がなされ、例えば、アイイーイーイ
ー・エレクトロン・デバイス・レターズ（ＩＥＥＥ、Ｅ
ｌｅｃｔｒｏｎ ＤｅｖｉｃｅＬｅｔｔ、）１９８６
．７．ｐｐ２５７〜２５８に発表されている。しかし、
この場合も十分な効果が期待できない、理想的には、除
々にバンド構造がＩｎＧａＡｓからＩｎＰにかわるＩｎ
ＸＧａ１−Ｘ Ｐ ｙ ＡＳ １−ｙ変成層を介在させ
る事が望まれる。しかしながら、結晶成長の問題上格子
整合した高品質な層を形成する事は不可能である８本発
明の目的は、これらの問題点を解決して、ＩｎＧａＡｓ
光吸収層とＩｎＰ増倍層の間に大きなバンド不連続が生
じない変成層を制御性良く得ることのできるアバランシ
ェ増倍型の半導体受光素子の製造方法を提供することに
ある。The I nGaAs layer 3 and I
There is a large discontinuity (approximately 0.385 eV in energy) on the valence band side of the nP layer 5. This is because holes generated in the light absorption layer are injected into the InP multiplication layer near the interface. It is trapped and becomes a slow component in the photoresponse. For this reason, in general, measures are taken to alleviate the discontinuity in the valence band by providing an InGaAsPnGaAs layer 3 between the InGaAs layer 3 and the InP layer 5. ,E
lectron Device Lett, ) 1986
．． 7. Published on pp 257-258. but,
In this case as well, a sufficient effect cannot be expected; ideally, the band structure of InGaAs gradually changes to InP.
It is desirable to have an intervening XGa1-X P y AS 1-y metamorphic layer. However, it is impossible to form a high-quality layer with lattice matching due to problems with crystal growth.8 The purpose of the present invention is to solve these problems and
It is an object of the present invention to provide a method for manufacturing an avalanche multiplication type semiconductor light-receiving element that can obtain a metamorphic layer with good controllability without causing large band discontinuity between a light absorption layer and an InP multiplication layer.
本発明の半導体受光素子の製造方法は、半導体基板上に
光吸収層である第一の半導体層を形成する工程とアバラ
ンシェ増倍層である第２の半導体層を形成する工程とを
含んで層構造を形成する半導体受光素子の製造方法にお
いて、前記層構造を形成した後６５０℃以上の高温雰囲
気で熱処理する工程を付加することにより構成される。The method for manufacturing a semiconductor light receiving element of the present invention includes the steps of forming a first semiconductor layer as a light absorption layer on a semiconductor substrate and a step of forming a second semiconductor layer as an avalanche multiplication layer. A method for manufacturing a semiconductor light receiving element in which a structure is formed includes adding a step of heat treatment in a high temperature atmosphere of 650° C. or higher after forming the layered structure.
本発明は、上述の手段をとることにより従来技術の問題
点を解決した０本発明では、ＩｎＰとＩｎＧａ、Ａｓ（
Ｐ）との相互拡散が６５０℃以上で顕著であることを見
いだした。これに着目して。The present invention solves the problems of the prior art by taking the above-mentioned means. In the present invention, InP, InGa, As(
It has been found that interdiffusion with P) is significant at temperatures above 650°C. Pay attention to this.
前述した層構造に高温雰囲気中で熱処理を行っている。The layered structure described above is heat treated in a high temperature atmosphere.
これによりＴｎＰとＩ ｎ Ｇ ａ Ａ ｓ （Ｐ ）
層の界面近傍でＩ ｎ、Ｇａ、Ａｓ、Ｐ等の原子種の拡
散が容易に生じ、バンド構造がＩ ｎＧａＡｓからＩｎ
Ｐに変わるＩ ｎ、Ｇａ１−、ＡｓｙＰＩ−Ｘ変成層が
実現できる、この様子を第３図に示す、この為、ＩｎＰ
増倍層に注入される正孔が大きなバンド不連続性を感じ
る事がないので、高速な光応答特性が可能になる。This allows TnP and InGaAs (P)
Diffusion of atomic species such as In, Ga, As, and P occurs easily near the interface between the layers, and the band structure changes from InGaAs to In.
This situation is shown in Figure 3, where InP changes to P, Ga1-, AsyPI-X metamorphism is realized.
Since holes injected into the multiplication layer do not experience large band discontinuities, high-speed photoresponse characteristics are possible.
以下、本発明の実施例について図面を用いて詳細に説明
する。第１図（ａ＞、（ｂ）、（ｃ）は本発明の一実施
例を説明するために、工程順に示した素子の断面図であ
る。Embodiments of the present invention will be described in detail below with reference to the drawings. FIGS. 1(a), 1(b), and 1(c) are cross-sectional views of an element shown in the order of steps for explaining an embodiment of the present invention.
まず、第１図（ａ）に示すように、ｎ型ＩｎＰ基板ｌ上
にｎ型ＩｎＰバッファ層２．ｎ型ＩｎＧａＡＳ光吸収層
３．ｎ屑ＩｎＧａＡｓＰ層４．ｎ型ＩｎＰ増倍層５．ｎ
型ＩｎＰキャップ層６を多成長室を有するハイドライド
気相成長方法によって得ている０次に、第１図（ｂ）に
示すように、本発明の特徴である燐圧雰囲気のもとて８
００℃２時間の熱処理をほどこす。次に、第１図（ｃ）
に示すように、拡散法によりＰ型受光部領域、Ｐ型ガー
ドリ〉・グ領域を形成し、その後に５ｉ０２膜、電極を
形成し、アバランシェ増倍型受光素子を得ている。First, as shown in FIG. 1(a), an n-type InP buffer layer 2. n-type InGaAS light absorption layer 3. n-scrap InGaAsP layer 4. n-type InP multiplication layer5. n
The InP type cap layer 6 is obtained by a hydride vapor phase epitaxy method having multiple growth chambers.As shown in FIG.
Heat treatment at 00°C for 2 hours. Next, Figure 1(c)
As shown in FIG. 3, a P-type light-receiving region and a P-type guard region are formed by a diffusion method, and then a 5i02 film and an electrode are formed to obtain an avalanche multiplication light-receiving element.
第２図は、熱処理の有無によるアバランシェ増倍型受光
素子の光応答周波数特性図である。いずれも内部利得に
よる増倍率を１０倍に固定した状態での測定である。こ
れより熱処理をほどこした場合には〜７ＧＨ２までの帯
域を有するが、熱処理がない場合には〜３ＧＨ２までし
かない。FIG. 2 is an optical response frequency characteristic diagram of an avalanche multiplication type light receiving element with and without heat treatment. In both cases, the measurements were made with the multiplication factor due to the internal gain fixed at 10 times. From this, when heat treatment is applied, the band is up to ~7GH2, but when no heat treatment is applied, the band is only up to ~3GH2.
以上説明したように、本発明の製造方法により作製した
アバランシェ増倍型受光素子は、光応答の周波数特性に
ついて従来に比較し改善されている事が判る。これは、
本発明である熱処理をほどこすことによって、界面近傍
で原子の相互拡散が生じ、バンド構造の急峻な不連続性
がなくなり、キャリアのトラップが起きにくくなった為
に、高速応答が可能になったことによる。As explained above, it can be seen that the avalanche multiplication type light receiving element manufactured by the manufacturing method of the present invention has improved frequency characteristics of optical response compared to the conventional one. this is,
By applying the heat treatment of the present invention, interdiffusion of atoms occurs near the interface, sharp discontinuities in the band structure are eliminated, and carrier traps are less likely to occur, making high-speed response possible. It depends.
第１図（ａ）、＜ｂ）、（ｃ）は本発明の一実指例を説
明するために工程順に示した素子の断面図、第２図は熱
処理の有無によるアバランシェ増倍型受光素子の光応答
周波特性図、第３図は、本発明の原理であるＩｎＧａＡ
ｓＪｉｌとＩｎＰ層界面の熱処理によるバンド構造の変
化を示す図、第４図は従来のアバランシェ増倍型受光素
子の一例の構造を示す断面図である。
１・・・ｎ型ＩｎＰ基板、２・・・ｎ型ＩｎＰバッファ
層、３・・・ｎ型ＩｎＧａＡｓ光吸収層、４・・・ｎ型
ＩｎＧａＡｓＰ層、５−ｎ型ＩｎＰ増倍層、６−・−ｎ
型ＩｎＰキャップ層、７・・・Ｐ型受光領域、８・・・
Ｐ型ガードリング領域、９・・・Ｐ側電極、１０・・・
ｎ１１１第１ 図
変調珂浪数（Ｃｒ／ｋ ）
第２ 口FIGS. 1(a), <b), and (c) are cross-sectional views of elements shown in order of process to explain one example of the present invention, and FIG. 2 is an avalanche multiplication type light-receiving element with and without heat treatment. Figure 3 shows the optical response frequency characteristic diagram of InGaA, which is the principle of the present invention.
FIG. 4 is a cross-sectional view showing the structure of an example of a conventional avalanche multiplication type light-receiving element. DESCRIPTION OF SYMBOLS 1...n-type InP substrate, 2...n-type InP buffer layer, 3...n-type InGaAs light absorption layer, 4...n-type InGaAsP layer, 5-n-type InP multiplication layer, 6-・-n
type InP cap layer, 7...P type light receiving region, 8...
P-type guard ring region, 9... P-side electrode, 10...
n111 1st figure modulation number (Cr/k) 2nd mouth
Claims (1)
る工程と、アバランシェ増倍層である第二の半導体層を
形成する工程とを含んで層構造を形成する半導体受光素
子の製造方法において、前記層構造を形成した後６５０
℃以上の高温雰囲気で熱処理する工程を付加したことを
特徴とする半導体受光素子の製造方法。A method for manufacturing a semiconductor light-receiving element that forms a layered structure including the steps of forming a first semiconductor layer as a light absorption layer on a semiconductor substrate and a second semiconductor layer as an avalanche multiplication layer. After forming the layered structure, 650
A method for manufacturing a semiconductor light receiving element, characterized by adding a step of heat treatment in a high temperature atmosphere of ℃ or higher.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243641A JPS6396968A (en) | 1986-10-13 | 1986-10-13 | Manufacture of semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61243641A JPS6396968A (en) | 1986-10-13 | 1986-10-13 | Manufacture of semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6396968A true JPS6396968A (en) | 1988-04-27 |
Family
ID=17106841
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61243641A Pending JPS6396968A (en) | 1986-10-13 | 1986-10-13 | Manufacture of semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6396968A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011060792A (en) * | 2009-09-04 | 2011-03-24 | Sumitomo Electric Ind Ltd | Method for manufacturing semiconductor element |
-
1986
- 1986-10-13 JP JP61243641A patent/JPS6396968A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011060792A (en) * | 2009-09-04 | 2011-03-24 | Sumitomo Electric Ind Ltd | Method for manufacturing semiconductor element |
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