JPS6395691A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JPS6395691A JPS6395691A JP61241848A JP24184886A JPS6395691A JP S6395691 A JPS6395691 A JP S6395691A JP 61241848 A JP61241848 A JP 61241848A JP 24184886 A JP24184886 A JP 24184886A JP S6395691 A JPS6395691 A JP S6395691A
- Authority
- JP
- Japan
- Prior art keywords
- heat sink
- light emitting
- heat
- light
- emitting section
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 239000004020 conductor Substances 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 230000002950 deficient Effects 0.000 abstract 2
- 230000020169 heat generation Effects 0.000 abstract 2
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は半導体発光装置に関し、特にその組立性と熱
特性の向上に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a semiconductor light emitting device, and particularly to improving its assembly ease and thermal characteristics.
第3図は従来の半導体発光装置を示し、図において、l
は半導体レーザチップ、2は該半導体レーザチップ1の
発光部、3は該発光部2で発生した熱を受けるヒートシ
ンクである。なお、矢印は発光部2で発生した熱の流れ
を示す。半導体レーザチップ1はジャンクションダウン
法により、その内部の発光部2が下方すなわちヒートシ
ンク3側に位置するように接着される。従来より半導体
発光装置においては、発光部で発生した熱により光出力
が低下しないように、発光部の熱を効率よく外部へ逃が
すためのヒートシンクが設けられている。FIG. 3 shows a conventional semiconductor light emitting device, in which l
2 is a semiconductor laser chip, 2 is a light emitting part of the semiconductor laser chip 1, and 3 is a heat sink that receives heat generated by the light emitting part 2. Note that arrows indicate the flow of heat generated in the light emitting section 2. The semiconductor laser chip 1 is bonded by the junction down method so that the light emitting section 2 inside thereof is positioned below, that is, on the heat sink 3 side. 2. Description of the Related Art Conventionally, semiconductor light emitting devices have been provided with a heat sink for efficiently dissipating heat from a light emitting part to the outside so that the light output does not decrease due to the heat generated in the light emitting part.
従来の半導体装置は上記のように構成されており、動作
中に発光部で発生した熱は下部のヒートシンクへ直接伝
わるか、あるいは半導体レーザチップl全面に伝わった
後ヒートシンク3へ流れる。The conventional semiconductor device is constructed as described above, and the heat generated in the light emitting part during operation is transmitted directly to the heat sink at the bottom, or is transmitted to the entire surface of the semiconductor laser chip l and then flows to the heat sink 3.
上記のような半導体発光装置では、発光部の放熱を良く
するために、発光部2がヒートシンク3に対し約数μm
と非常に接近して設けられているので、組み立ての際、
はんだ材等がまわり込み短絡を起こすという問題点があ
った。In the semiconductor light emitting device as described above, in order to improve the heat dissipation of the light emitting part, the light emitting part 2 is separated from the heat sink 3 by about several μm.
Since it is located very close to the
There was a problem in that the solder material etc. could wrap around and cause a short circuit.
この発明は上記のような問題点を解消するためになされ
たもので、組み立て時の短絡不良を無くすことができ、
かつ良好な放熱特性を有する半導体発光装置を得ること
を目的とする。This invention was made to solve the above-mentioned problems, and can eliminate short-circuit defects during assembly.
It is an object of the present invention to obtain a semiconductor light emitting device having good heat dissipation characteristics.
C問題点を解決するための手段〕
この発明に係る半導体発光装置は、半導体レーザチップ
をその発光部側主面と反対側の主面にてヒートシンクに
接着し、かつ放熱板を半導体レーザチップの発光部側主
面とヒートシンク面とに接触させて設けたものである。Means for Solving Problem C] In the semiconductor light emitting device according to the present invention, a semiconductor laser chip is bonded to a heat sink at its main surface opposite to the main surface on the light emitting part side, and a heat sink is attached to the semiconductor laser chip. It is provided in contact with the main surface on the light emitting section side and the heat sink surface.
この発明においては、半導体レーザチップをその発光部
が上方に位置するようにヒートシンクに接着し、放熱板
を発光部側主面とヒートシンク面とに接触させて設けた
ことから、組立時の短絡不良をなくすことができ、発光
部の発熱を効率良く発散させることができる。In this invention, the semiconductor laser chip is bonded to the heat sink so that its light emitting part is located upward, and the heat sink is provided in contact with the main surface on the light emitting part side and the heat sink surface, so that short circuits may occur during assembly. This makes it possible to efficiently dissipate heat from the light emitting section.
以下、この発明の一実施例を図について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図はこの発明の一実施例による半導体発光装置を示
し、図において、lは半導体レーザチップ、2は該半導
体レーザチップ1内に埋め込まれた発光部、3は該発光
部2で発生した熱を受けるヒートシンク、4は該発光部
2で発生した熱をヒートシンク3に逃すためのMO等の
導電材からなる放熱板である。上記半導体レーザチップ
1はその発光部2が上方に位置するようにジャンクシラ
ンアップ法によりヒートシンク3に接着し、その後上記
放熱板4は半導体レーザチンプ1の上方の主面とヒート
シンク3とに接触させて設ける。FIG. 1 shows a semiconductor light emitting device according to an embodiment of the present invention, in which l is a semiconductor laser chip, 2 is a light emitting part embedded in the semiconductor laser chip 1, and 3 is a light emitting part embedded in the light emitting part 2. A heat sink 4 that receives heat is a heat sink made of a conductive material such as MO for dissipating the heat generated in the light emitting section 2 to the heat sink 3. The semiconductor laser chip 1 is adhered to the heat sink 3 by the junk seal up method so that the light emitting part 2 is located above, and then the heat sink 4 is brought into contact with the upper principal surface of the semiconductor laser chip 1 and the heat sink 3. establish.
次に作用、効果について説明する。Next, the action and effect will be explained.
ジャンクションアップ法で組み立てられた半導体発光装
置では、従来のように放熱板を設けない場合は、発光部
で発生した熱の50%以上が半導体チップ上面の電極を
伝わって半導体チップ全面に拡がり、その後、半導体チ
ップ下面方向に伝わり、ヒートシンクに流れていること
が解析により確かめられている。これに対し、本実施例
では、動作中に発光部2で発生した熱の大部分は上方の
オーミック電極を通過し、MO等の導電材からなる放熱
板4を介してヒートシンク3に伝わり、残りの熱のうち
一部は空気中に逃げ、他は半導体レーザチップ1の内部
を通り下方のヒートシンク3に流れることとなり、この
ようにして発光部の発熱を効果的に外部に発散させるこ
とができる。In a semiconductor light-emitting device assembled using the junction-up method, if a heat sink is not provided as in the conventional method, more than 50% of the heat generated in the light-emitting part will be transmitted through the electrodes on the top surface of the semiconductor chip and spread over the entire surface of the semiconductor chip. Analysis has confirmed that the energy is transmitted toward the bottom surface of the semiconductor chip and flows to the heat sink. In contrast, in this embodiment, most of the heat generated in the light emitting unit 2 during operation passes through the upper ohmic electrode, is transmitted to the heat sink 3 via the heat sink 4 made of a conductive material such as MO, and the remaining heat is transmitted to the heat sink 3 via the heat sink 4 made of a conductive material such as MO. A part of the heat escapes into the air, and the other part passes through the inside of the semiconductor laser chip 1 and flows to the heat sink 3 below. In this way, the heat generated by the light emitting part can be effectively dissipated to the outside. .
また、本実施例ではジャンクションアップ法で組み立て
ることにより、組立時の短絡不良をなくすことができる
。Further, in this embodiment, by assembling by the junction-up method, short circuit failures during assembly can be eliminated.
なお、上記実施例では放熱板にMOを使用していたが、
半導体チップと熱膨張係数が近似し熱伝導性の良好な他
の導電材料でもよい。In addition, in the above example, MO was used for the heat sink, but
Other conductive materials having a thermal expansion coefficient similar to that of the semiconductor chip and good thermal conductivity may be used.
また第2図のように放熱板をヒートシンクの片側のみに
接触させてもよい。Further, as shown in FIG. 2, the heat sink may be brought into contact with only one side of the heat sink.
また上記実施例では半導体レーザに通用したが、他の端
面発光素子でも同様の効果が得られる。Further, although the above embodiments were applicable to semiconductor lasers, similar effects can be obtained with other edge emitting devices.
以上のように、この発明に係る半導体発光装置によれば
、半導体レーザチップをその発光部側主面と反対側の主
面にてヒートシンクに接着し、該発光部側主面にヒート
シンク面と接触させて放熱板を設けたので、短絡等の組
み立て不良をなくし、かつ発光部での発熱を効率良く発
散させることができる。As described above, according to the semiconductor light emitting device of the present invention, the semiconductor laser chip is bonded to the heat sink at its main surface opposite to the main surface on the light emitting section side, and the main surface on the light emitting section side is in contact with the heat sink surface. Since the heat dissipation plate is provided, it is possible to eliminate assembly defects such as short circuits and to efficiently dissipate heat generated in the light emitting section.
第1図はこの発明の一実施例による半導体発光装置の組
立図、第2図はこの発明の他の実施例による半導体発光
装置の組立図、第4図は従来の半導体発光装置の組立図
である。
図において、1は半導体レーザチップ、2は発光部、3
はヒートシンク、4は放熱板である。
なお図中、同一符号は同−又は相当部分を示す。FIG. 1 is an assembly diagram of a semiconductor light emitting device according to one embodiment of the present invention, FIG. 2 is an assembly diagram of a semiconductor light emitting device according to another embodiment of the invention, and FIG. 4 is an assembly diagram of a conventional semiconductor light emitting device. be. In the figure, 1 is a semiconductor laser chip, 2 is a light emitting part, and 3 is a semiconductor laser chip.
is a heat sink, and 4 is a heat sink. In the drawings, the same reference numerals indicate the same or equivalent parts.
Claims (1)
導体発光装置において、 該半導体レーザチップをその発光部側主面と反対側の主
面にて上記ヒートシンクに接着し、該半導体レーザチッ
プの上記発光部側主面に上記ヒートシンクと接触させて
放熱板を設けたことを特徴とする半導体発光装置。(1) In a semiconductor light emitting device consisting of a semiconductor laser chip and a heat sink, the semiconductor laser chip is adhered to the heat sink with its main surface opposite to the main surface on the light emitting part side, and the light emitting part side of the semiconductor laser chip is bonded to the heat sink. A semiconductor light emitting device characterized in that a heat sink is provided on a main surface in contact with the heat sink.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61241848A JPS6395691A (en) | 1986-10-11 | 1986-10-11 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61241848A JPS6395691A (en) | 1986-10-11 | 1986-10-11 | Semiconductor light-emitting device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6395691A true JPS6395691A (en) | 1988-04-26 |
Family
ID=17080406
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61241848A Pending JPS6395691A (en) | 1986-10-11 | 1986-10-11 | Semiconductor light-emitting device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6395691A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016167492A (en) * | 2015-03-09 | 2016-09-15 | スタンレー電気株式会社 | Light emission device |
-
1986
- 1986-10-11 JP JP61241848A patent/JPS6395691A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016167492A (en) * | 2015-03-09 | 2016-09-15 | スタンレー電気株式会社 | Light emission device |
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