JPS63916B2 - - Google Patents
Info
- Publication number
- JPS63916B2 JPS63916B2 JP59059941A JP5994184A JPS63916B2 JP S63916 B2 JPS63916 B2 JP S63916B2 JP 59059941 A JP59059941 A JP 59059941A JP 5994184 A JP5994184 A JP 5994184A JP S63916 B2 JPS63916 B2 JP S63916B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- thin film
- memory
- emitting device
- added
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 27
- 230000005684 electric field Effects 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000013543 active substance Substances 0.000 claims description 3
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims 1
- 239000011572 manganese Substances 0.000 description 29
- 230000005516 deep trap Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 6
- 230000010287 polarization Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 3
- 230000006386 memory function Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59059941A JPS60202686A (ja) | 1984-03-27 | 1984-03-27 | 薄膜発光素子 |
DE8484110097T DE3476624D1 (en) | 1983-10-25 | 1984-08-24 | Thin film light emitting element |
EP84110097A EP0141116B1 (fr) | 1983-10-25 | 1984-08-24 | Elément électroluminescent à couche mince |
US06/645,078 US4672266A (en) | 1983-10-25 | 1984-08-28 | Thin film light emitting element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP59059941A JPS60202686A (ja) | 1984-03-27 | 1984-03-27 | 薄膜発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60202686A JPS60202686A (ja) | 1985-10-14 |
JPS63916B2 true JPS63916B2 (fr) | 1988-01-09 |
Family
ID=13127668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP59059941A Granted JPS60202686A (ja) | 1983-10-25 | 1984-03-27 | 薄膜発光素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60202686A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0313225U (fr) * | 1989-06-23 | 1991-02-12 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593039A (ja) * | 1982-06-25 | 1984-01-09 | Nippon Telegr & Teleph Corp <Ntt> | フツ化物光フアイバ用ガラスの作製方法 |
-
1984
- 1984-03-27 JP JP59059941A patent/JPS60202686A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS593039A (ja) * | 1982-06-25 | 1984-01-09 | Nippon Telegr & Teleph Corp <Ntt> | フツ化物光フアイバ用ガラスの作製方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0313225U (fr) * | 1989-06-23 | 1991-02-12 |
Also Published As
Publication number | Publication date |
---|---|
JPS60202686A (ja) | 1985-10-14 |
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