JPS6390833U - - Google Patents
Info
- Publication number
- JPS6390833U JPS6390833U JP18711086U JP18711086U JPS6390833U JP S6390833 U JPS6390833 U JP S6390833U JP 18711086 U JP18711086 U JP 18711086U JP 18711086 U JP18711086 U JP 18711086U JP S6390833 U JPS6390833 U JP S6390833U
- Authority
- JP
- Japan
- Prior art keywords
- belt
- gas supply
- semiconductor wafer
- supply head
- reciprocating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000032258 transport Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18711086U JPS6390833U (enrdf_load_stackoverflow) | 1986-12-03 | 1986-12-03 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18711086U JPS6390833U (enrdf_load_stackoverflow) | 1986-12-03 | 1986-12-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6390833U true JPS6390833U (enrdf_load_stackoverflow) | 1988-06-13 |
Family
ID=31137281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18711086U Pending JPS6390833U (enrdf_load_stackoverflow) | 1986-12-03 | 1986-12-03 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6390833U (enrdf_load_stackoverflow) |
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |
-
1986
- 1986-12-03 JP JP18711086U patent/JPS6390833U/ja active Pending
Cited By (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7501343B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7501344B2 (en) | 2000-06-27 | 2009-03-10 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7208413B2 (en) | 2000-06-27 | 2007-04-24 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
| US7101795B1 (en) | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
| US7465666B2 (en) | 2000-06-28 | 2008-12-16 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
| US7235486B2 (en) | 2000-06-28 | 2007-06-26 | Applied Materials, Inc. | Method for forming tungsten materials during vapor deposition processes |
| US7115494B2 (en) | 2000-06-28 | 2006-10-03 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US6855368B1 (en) | 2000-06-28 | 2005-02-15 | Applied Materials, Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7033922B2 (en) | 2000-06-28 | 2006-04-25 | Applied Materials. Inc. | Method and system for controlling the presence of fluorine in refractory metal layers |
| US7022948B2 (en) | 2000-12-29 | 2006-04-04 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US6998579B2 (en) | 2000-12-29 | 2006-02-14 | Applied Materials, Inc. | Chamber for uniform substrate heating |
| US7094680B2 (en) | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US6951804B2 (en) | 2001-02-02 | 2005-10-04 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
| US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7201803B2 (en) | 2001-03-07 | 2007-04-10 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
| US7211144B2 (en) | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
| US6878206B2 (en) | 2001-07-16 | 2005-04-12 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
| US7085616B2 (en) | 2001-07-27 | 2006-08-01 | Applied Materials, Inc. | Atomic layer deposition apparatus |
| US6936906B2 (en) | 2001-09-26 | 2005-08-30 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US7049226B2 (en) | 2001-09-26 | 2006-05-23 | Applied Materials, Inc. | Integration of ALD tantalum nitride for copper metallization |
| US7494908B2 (en) | 2001-09-26 | 2009-02-24 | Applied Materials, Inc. | Apparatus for integration of barrier layer and seed layer |
| US7352048B2 (en) | 2001-09-26 | 2008-04-01 | Applied Materials, Inc. | Integration of barrier layer and seed layer |
| US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
| US7473638B2 (en) | 2002-01-26 | 2009-01-06 | Applied Materials, Inc. | Plasma-enhanced cyclic layer deposition process for barrier layers |
| US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
| US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7094685B2 (en) | 2002-01-26 | 2006-08-22 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
| US7429516B2 (en) | 2002-02-26 | 2008-09-30 | Applied Materials, Inc. | Tungsten nitride atomic layer deposition processes |
| US7115499B2 (en) | 2002-02-26 | 2006-10-03 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
| US7439191B2 (en) | 2002-04-05 | 2008-10-21 | Applied Materials, Inc. | Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications |
| US7262133B2 (en) | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
| US7595263B2 (en) | 2003-06-18 | 2009-09-29 | Applied Materials, Inc. | Atomic layer deposition of barrier materials |