JPS638633B2 - - Google Patents

Info

Publication number
JPS638633B2
JPS638633B2 JP53090777A JP9077778A JPS638633B2 JP S638633 B2 JPS638633 B2 JP S638633B2 JP 53090777 A JP53090777 A JP 53090777A JP 9077778 A JP9077778 A JP 9077778A JP S638633 B2 JPS638633 B2 JP S638633B2
Authority
JP
Japan
Prior art keywords
infrared
light
ctd
substrate
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53090777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5518035A (en
Inventor
Hiroshi Takigawa
Shoji Doi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9077778A priority Critical patent/JPS5518035A/ja
Publication of JPS5518035A publication Critical patent/JPS5518035A/ja
Publication of JPS638633B2 publication Critical patent/JPS638633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP9077778A 1978-07-24 1978-07-24 Infrared ray detector Granted JPS5518035A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9077778A JPS5518035A (en) 1978-07-24 1978-07-24 Infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9077778A JPS5518035A (en) 1978-07-24 1978-07-24 Infrared ray detector

Publications (2)

Publication Number Publication Date
JPS5518035A JPS5518035A (en) 1980-02-07
JPS638633B2 true JPS638633B2 (enrdf_load_html_response) 1988-02-23

Family

ID=14008025

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9077778A Granted JPS5518035A (en) 1978-07-24 1978-07-24 Infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5518035A (enrdf_load_html_response)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525334U (ja) * 1991-09-13 1993-04-02 株式会社エビナ電機製作所 エアー テンパラチヤー センサー

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0525334U (ja) * 1991-09-13 1993-04-02 株式会社エビナ電機製作所 エアー テンパラチヤー センサー

Also Published As

Publication number Publication date
JPS5518035A (en) 1980-02-07

Similar Documents

Publication Publication Date Title
JP3257687B2 (ja) 電気光学検出器アレーとその製造方法
JPH027417B2 (enrdf_load_html_response)
JPH022692A (ja) 赤外線検知用溝付きショットキーバリアホトダイオード
GB2080026A (en) Radiation sensitive semiconductor device
CN112086524A (zh) 一种红外探测装置及制备方法
JPH0797653B2 (ja) 光電変換素子
WO2001075977A1 (en) Semiconductor energy detector
WO2021131758A1 (ja) 半導体光検出素子
US4633287A (en) Semiconductor photoelectric conversion device
CN114520243A (zh) 红外焦平面探测器及其制备方法
CN114530468B (zh) 红外焦平面探测器及其制备方法
JPH05267695A (ja) 赤外線撮像装置
JPH06326293A (ja) 光検出装置
JP7109718B2 (ja) 化合物半導体フォトダイオードアレイ
JP4571267B2 (ja) 放射線検出器
CN217214720U (zh) 一种具有网格状公共电极结构的红外焦平面探测器
JPS638633B2 (enrdf_load_html_response)
JPH027051B2 (enrdf_load_html_response)
CN111799351B (zh) X射线阵列传感器、探测器及其制作方法
US5942788A (en) Solid state image sensing device
JP2659184B2 (ja) シヨツトキ障壁型赤外線センサ
JPS6222405B2 (enrdf_load_html_response)
CN222547938U (zh) 一种平面型弛豫锗系传感器
JPH01216581A (ja) 半導体装置
Hoendervoogt et al. Hybrid InSb focal plane array fabrication