JPS6384946A - Thermal head - Google Patents
Thermal headInfo
- Publication number
- JPS6384946A JPS6384946A JP22964886A JP22964886A JPS6384946A JP S6384946 A JPS6384946 A JP S6384946A JP 22964886 A JP22964886 A JP 22964886A JP 22964886 A JP22964886 A JP 22964886A JP S6384946 A JPS6384946 A JP S6384946A
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- substrate
- thermal head
- doped polysilicon
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 33
- 229920005591 polysilicon Polymers 0.000 claims abstract description 33
- 238000010438 heat treatment Methods 0.000 claims description 17
- 210000003298 dental enamel Anatomy 0.000 abstract description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052796 boron Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 2
- 241001538551 Sibon Species 0.000 abstract 1
- 238000005299 abrasion Methods 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004615 ingredient Substances 0.000 abstract 1
- 231100000989 no adverse effect Toxicity 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
Abstract
Description
【発明の詳細な説明】
（技術分野）
本発明はサーマルヘッドに関し、特にその基板の改良に
関する。本発明は特に安価な基板を有するサーマルヘッ
ドを提供するものである。DETAILED DESCRIPTION OF THE INVENTION (Technical Field) The present invention relates to a thermal head, and more particularly to improvements to its substrate. The present invention provides a thermal head with a particularly inexpensive substrate.
（従来技術とその問題点）
コンビ二一夕やワードプロセッサ等のプリンタに用いら
れるサーマルヘッドは耐熱性基板の上に抵抗発熱体の層
を設け、とれに通電することによシ発熱を行うようにな
っている。基板の材料としてはアルミナ、或いはその上
にグレーズを焼付けたものが用いられ、熱安定性が良く
抵抗体への影響が少ないことが知られている。しかしア
ルミナ基板は高価であるので、安価な代替物質が望まれ
ている。(Prior art and its problems) Thermal heads used in printers such as combi printers and word processors have a layer of resistive heating elements on a heat-resistant substrate, and heat is generated by energizing the layer. It has become. The substrate material used is alumina or a glaze baked onto it, which is known to have good thermal stability and little influence on the resistor. However, since alumina substrates are expensive, inexpensive alternative materials are desired.
この試みの１つにホーローを用いた基板妙：ある。One of the attempts is to create a substrate using enamel.
ホーロー基板上にドープポリシリコン（ホウ素すどｔド
ープ）などの発熱体を化学蒸着（ＣＶＤ）法などによっ
て成膜すると、基板中の元素の影響のために発熱抵抗体
の抵抗が大きくなってしまうだけでなく、サーマルヘッ
ドの使用中に発熱によるアニール効果のため抵抗値が経
時的に大きく低下してしまうという問題があシ、実用化
が困】で６つ九。なお、従来のように基板の上にグレー
ズ層を形成することが考えられるが、ホーローは低温焼
成物であるからグレーズ層の焼付は中にグレ−大府の性
質が劣化してしまう。When a heating element such as doped polysilicon (boron-doped) is formed on a hollow substrate by chemical vapor deposition (CVD), the resistance of the heating resistor increases due to the effects of the elements in the substrate. In addition, there is the problem that the resistance value decreases significantly over time due to the annealing effect caused by heat generation during use of the thermal head, making it difficult to put it into practical use. Although it is conceivable to form a glaze layer on the substrate as in the conventional method, since enamel is fired at a low temperature, the properties of the glaze layer deteriorate during baking of the glaze layer.
（発明の目的）
本発明は基板として安価なホーロー基板を用いて安定性
の良いサーマルヘッドを構成すること金目的とする。本
発明は特にホーロー基板の表面処理によって安定性の良
いサーマルヘッドを提供することを目的とする＠
（発明の概要）
本発明のサーマルヘッドは、基体と、その上に形成され
たホウ素ドープポリシリコンなどのドープポリシリコン
発熱抵抗体と、その上に対向して設けられた電極リード
と、表面を保護する耐熱耐摩層とを基本構成とするサー
マルヘッドにおいて、基体としてホーロー基板の表面に
非ドープポリシリコン膜を形成したものを用いることを
特徴とするＯ
本発明によると、安価なホーロー基体が使用できるだけ
でなく、その表面は非ドープポリシリコンによ）遮断さ
れて発熱体は安定化され、経時変化のないすぐれたサー
マルヘッドが提供できる。(Object of the Invention) An object of the present invention is to construct a thermal head with good stability using an inexpensive hollow substrate as the substrate. The purpose of the present invention is to provide a thermal head with good stability, particularly by surface treatment of a hollow substrate. In a thermal head, the basic structure is a doped polysilicon heating resistor, electrode leads provided on top of the heating resistor, and a heat-resistant and wear-resistant layer that protects the surface. According to the present invention, not only can an inexpensive enamel substrate be used, but also its surface is blocked by undoped polysilicon and the heating element is stabilized over time. An excellent thermal head that does not change can be provided.
（発明の詳細な説明）
第１図は本発明のサーマルヘッドの構造を示す断面図で
、本発明に従ってホーロー基板５０表面に非ドープポリ
シリコン膜４が形成され、その上にホウ素ドープポリシ
リコン等の発熱抵抗体３、人１等の電極リード２，２、
及び８１ ＢＯＮ等の耐摩耗層１がとの順に形成される
。(Detailed Description of the Invention) FIG. 1 is a sectional view showing the structure of a thermal head of the present invention, in which an undoped polysilicon film 4 is formed on the surface of a hollow substrate 50 according to the present invention, and boron-doped polysilicon etc. heating resistor 3, electrode leads 2, 2 of person 1, etc.
and 81. A wear-resistant layer 1 such as BON is formed in this order.
ホーローはガラス様の物質であ）、ＢａＯ、ＡｌｘＯｓ
、８１０２ 、Ｂ２ｕｓなどを含有するが、λ１２０ｓ
は通常のグレーズよ〕もかなシ低含有量であり、或
いはＢｈＯ５Ｂ２０ｓ などが下地になるため、ホー
ロー基板に直接ホウ素ドープポリシリコンなどの発熱体
ｔ−ＣｖＤ法などにより成膜しても結晶成長が妨げられ
てドープポリシリコン膜の抵抗値の安定性が低下する。Enamel is a glass-like substance), BaO, AlxOs
, 8102, B2us, etc., but λ120s
Because glaze has a lower content than normal glazes, or because it is made of BhO5B20s as a base material, crystal growth does not occur even if the film is directly deposited on a enamel substrate using heating elements such as boron-doped polysilicon using the t-CvD method. As a result, the stability of the resistance value of the doped polysilicon film decreases.
ホーロー基板の上に５１０２や５１ｓＮａ などを成
膜すると、ホーロー基板と抵抗膜とは良好に遮断される
が、発熱体とは異質の膜であるために工程が複雑になる
欠点があシ、よシ簡便に形成できる材料が望まれる。When a film such as 5102 or 51sNa is formed on a hollow substrate, the hollow substrate and the resistive film are well isolated, but the disadvantage is that the process becomes complicated because the film is different from the heating element. A material that can be easily formed is desired.
本発明はホーロー基板の上にＣＶＤなどの方法によシ非
ドープポリシリコンを形成する＠ドープ型ポリシリコン
を直接ホーロー基板の上に形成する場合にはホーロー基
板の影響を受けたのに対して、意外にも非ドープポリシ
リコンには基板の影響が実質的に及ばないことが分った
。この非ドープポリシリコンにホー四−中の成分が高温
で拡散するのを充分に防止するバリヤとして働く。また
特に発熱抵抗体がポリシリコンやホウ素等をドープした
ポリシリコンなどの場合には、非ドープポリシリコンは
発熱抵抗体と良くなじみ良好な結合性管示し、しかも抵
抗値に影Ｉ！１ｉ１１ｆｔ与えない。In the present invention, undoped polysilicon is formed on a hollow substrate by a method such as CVD.In contrast, when doped polysilicon is formed directly on a hollow substrate, it is influenced by the hollow substrate. Surprisingly, it was found that undoped polysilicon is substantially unaffected by the substrate. This undoped polysilicon acts as a sufficient barrier to prevent the components in the polysilicon from diffusing at high temperatures. In addition, especially when the heating resistor is made of polysilicon or polysilicon doped with boron or the like, undoped polysilicon blends well with the heating resistor and exhibits good bonding properties, and also has no effect on the resistance value! 1i11ft not given.
ホーロー基体の表面に順に形成されるこれら２種のポリ
シリコンの膜は減圧ＣＶＤ法によって成膜することがで
きる。例えはキャリヤガスとしてλｒＳＭ−等、ケイ素
源として８１Ｈ４，８１Ｍ２Ｃｊ２ ’！、ドープ用ホ
ウ素源としてＢ２Ｈ，６等を用いることができ、減圧下
、高い基板温度で所定の成膜を行うことができる。These two types of polysilicon films, which are sequentially formed on the surface of the hollow base, can be formed by low pressure CVD. For example, λrSM- etc. as a carrier gas, 81H4, 81M2Cj2'! as a silicon source! , B2H,6, etc. can be used as a boron source for doping, and a predetermined film can be formed under reduced pressure and at a high substrate temperature.
以下に実施例ｔ−詳しく説明する。Example t is described in detail below.
実施例
第１図に示した構造のサーマルヘッドを製造した。すな
わち、低圧ＣＶＤ法管用いてホーロー基板の表面に先ず
非ドープ塵ポリシリコンを５００〜１０００人の厚さに
成膜した。−成膜原料ガス及び条件は次の通シであった
Ｏ
Ｈ・ １００Ｍ
８１Ｈａ ５０８０ＣＭ
基板温度 ８００℃
圧力 ７０Ｐ＆
！Ｉ続いてドープ用ガスとしてホウ素ガス源からＢ２Ｈ
４管導入して次の条件でホウ素ドープポリシリコンを成
膜し九〇
成膜条件は次Ｏ通シであった。Example A thermal head having the structure shown in FIG. 1 was manufactured. That is, a film of undoped dust polysilicon was first formed on the surface of a hollow substrate to a thickness of 500 to 1,000 layers using a low-pressure CVD method. - The film-forming raw material gas and conditions were as follows: OH 100M 81Ha 5080CM Substrate temperature 800°C Pressure 70P&! I followed by B2H from a boron gas source as a doping gas.
A boron-doped polysilicon film was formed by introducing four tubes under the following conditions.The film forming conditions were as follows.
Ｂ２Ｈ４１０ｆ９ＣＣＭ
８１Ｈ４１００８ＣＣＭ
Ｈ・ １００Ｍ基板温度
６３０℃
圧力 ｙｏｐａ
さらに、常法に従って、Ａ！ 電極リード及び８１ＢＯ
Ｎ−７ｉｉ−形成し、抵抗率及び耐パルス試験を行った
。次表に示す結果１得た。なお比較のためホーローの上
に直接発熱体を形成した（比較例）ものを用意した。B2H410f9CCM 81H41008CCM H・100M Substrate temperature
630℃ Pressure yopa Further, according to the conventional method, A! Electrode lead and 81BO
N-7ii- was formed and resistivity and pulse resistance tests were conducted. Results 1 shown in the following table were obtained. For comparison, we prepared a sample in which a heating element was directly formed on the enamel (comparative example).
表
なお、耐パルス試験は電力２５ｗ／１ｍ２、周期１０ｍ
秒、パルス幅１ｍ秒の熱パルス１１Ｘ１０８回加えた後
の電気抵抗値の変化を示す・
（作用効果）
上の結果から分るように、本発明ではホウロウ基板の上
に非ドープポリシリコンの膜を形成したものをドープポ
リシリコン発熱抵抗体の基板としたから、抵抗率は低く
抑えることができる。とれを比較例と対比するとホーロ
ー基板から抵抗体膜への影響が非ドープポリシリコンに
よって防止されることが分る。また耐パルス試験の結果
によると、長期の熱パルスの繰返し印加によっても抵抗
値の変動は小さく抑えることができる。これに対してホ
ーロー基板のみ管用いると抵抗は急激に変化し、安定性
を著しく欠くことが分る。In addition, the pulse resistance test was conducted at a power of 25w/1m2 and a period of 10m.
The graph shows the change in electrical resistance after applying a heat pulse of 11 x 108 times with a pulse width of 1 msec. Since the substrate formed with the doped polysilicon heating resistor is used as the substrate of the doped polysilicon heating resistor, the resistivity can be kept low. Comparing the cracking with the comparative example, it can be seen that the effect of the hollow substrate on the resistor film is prevented by the undoped polysilicon. Furthermore, according to the results of a pulse resistance test, fluctuations in resistance value can be suppressed to a small level even when long-term heat pulses are repeatedly applied. On the other hand, if only a hollow substrate tube is used, the resistance changes rapidly and it is found that stability is significantly lacking.
このように、本発明は不適当と考えられていたホーロー
基板にポリシリコンの被膜を施すことによってすぐれた
安定性と低抵抗率の発熱抵抗体を有するサーマルヘッド
を提供することができた。As described above, the present invention was able to provide a thermal head having a heating resistor with excellent stability and low resistivity by applying a polysilicon coating to a hollow substrate, which was considered to be inappropriate.
第１図は本発明のサーマルヘッドの構成を示す断面図で
ある。FIG. 1 is a sectional view showing the structure of a thermal head according to the present invention.
Claims (1)
電極リードを設け、さらに耐摩耗層を形成して成るサー
マルヘッドにおいて、前記基体としてホーロー基板の表
面に非ドープポリシリコン膜を形成したものを使用する
ことを特徴とするサーマルヘッド。 ２、発熱抵抗体はホウ素ドープ型ポリシリコンである前
記第１項記載のサーマルヘッド。[Claims] 1. A thermal head in which a heating resistor is formed on the surface of a base, a pair of electrode leads are provided thereon, and a wear-resistant layer is further formed on the surface of a hollow substrate as the base. A thermal head characterized by using a non-doped polysilicon film formed thereon. 2. The thermal head according to item 1 above, wherein the heating resistor is made of boron-doped polysilicon.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22964886A JPS6384946A (en) | 1986-09-30 | 1986-09-30 | Thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22964886A JPS6384946A (en) | 1986-09-30 | 1986-09-30 | Thermal head |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6384946A true JPS6384946A (en) | 1988-04-15 |
Family
ID=16895487
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22964886A Pending JPS6384946A (en) | 1986-09-30 | 1986-09-30 | Thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384946A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975126B2 (en) | 2001-04-04 | 2005-12-13 | Fujitsu Limited | Contactor apparatus for semiconductor devices and a test method of semiconductor devices |
| KR20160040146A (en) * | 2013-08-07 | 2016-04-12 | 라이스하우어 아게 | Dressing tool and method for the production thereof |
-
1986
- 1986-09-30 JP JP22964886A patent/JPS6384946A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6975126B2 (en) | 2001-04-04 | 2005-12-13 | Fujitsu Limited | Contactor apparatus for semiconductor devices and a test method of semiconductor devices |
| KR100702021B1 (en) * | 2001-04-04 | 2007-04-06 | 후지쯔 가부시끼가이샤 | Contactor device for semiconductor device and method of testing semiconductor device |
| US7304487B2 (en) | 2001-04-04 | 2007-12-04 | Fujitsu Limited | Test method of semiconductor devices |
| KR20160040146A (en) * | 2013-08-07 | 2016-04-12 | 라이스하우어 아게 | Dressing tool and method for the production thereof |
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