JPS6384931U - - Google Patents
Info
- Publication number
- JPS6384931U JPS6384931U JP17990286U JP17990286U JPS6384931U JP S6384931 U JPS6384931 U JP S6384931U JP 17990286 U JP17990286 U JP 17990286U JP 17990286 U JP17990286 U JP 17990286U JP S6384931 U JPS6384931 U JP S6384931U
- Authority
- JP
- Japan
- Prior art keywords
- thermocouple
- semiconductor wafer
- vapor phase
- phase growth
- support stand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 238000007664 blowing Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
第１図は本考案の気相成長装置の縦断面図、第
２図は従来の気相成長装置の断面図である。
１……抵抗ヒーター、２……サセプタ、３……
半導体ウエーハ、４……反応ガス供給部、５……
排気管、６……熱電対、７……熱電対（半導体ウ
エーハ用）、８……半導体ウエーハカセツト、１
０……熱電対移動支持台、１１……温度計測器。
FIG. 1 is a longitudinal sectional view of a vapor phase growth apparatus of the present invention, and FIG. 2 is a sectional view of a conventional vapor phase growth apparatus. 1...Resistance heater, 2...Susceptor, 3...
Semiconductor wafer, 4... Reaction gas supply section, 5...
Exhaust pipe, 6...Thermocouple, 7...Thermocouple (for semiconductor wafer), 8...Semiconductor wafer cassette, 1
0... Thermocouple moving support stand, 11... Temperature measuring device.
Claims (1)
タに載置して、加熱された半導体ウエーハの表面
に反応ガスを吹きつけて薄膜を連続して気相成長
させる装置において、 前記反応ガスの供給部近傍で、サセプタ上方に
、上下垂直方向および左右横方向に移動可能な熱
電対移動支持台を配置し、該熱電対移動支持台に
支持される熱電対が、搬送中の半導体ウエーハに
一定期間接触しながら温度測定を行なうことを特
徴とする気相成長装置。[Claims for Utility Model Registration] In an apparatus for continuous vapor phase growth of thin films by blowing a reactive gas onto the surface of a heated semiconductor wafer placed on a transportable susceptor attached to the top of a heater. , a thermocouple movable support stand movable vertically up and down and left and right horizontally is disposed above the susceptor in the vicinity of the reactant gas supply section, and the thermocouple supported by the thermocouple movable support stand is moved during transportation. A vapor phase growth apparatus characterized by measuring temperature while being in contact with a semiconductor wafer for a certain period of time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17990286U JPS6384931U (en) | 1986-11-21 | 1986-11-21 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17990286U JPS6384931U (en) | 1986-11-21 | 1986-11-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6384931U true JPS6384931U (en) | 1988-06-03 |
Family
ID=31123374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17990286U Pending JPS6384931U (en) | 1986-11-21 | 1986-11-21 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6384931U (en) |
-
1986
- 1986-11-21 JP JP17990286U patent/JPS6384931U/ja active Pending
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