JPS638264A - Silicon carbide base composite material - Google Patents
Silicon carbide base composite materialInfo
- Publication number
- JPS638264A JPS638264A JP61147176A JP14717686A JPS638264A JP S638264 A JPS638264 A JP S638264A JP 61147176 A JP61147176 A JP 61147176A JP 14717686 A JP14717686 A JP 14717686A JP S638264 A JPS638264 A JP S638264A
- Authority
- JP
- Japan
- Prior art keywords
- silicon carbide
- composite material
- silicon
- spalling resistance
- strength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims description 28
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 21
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 14
- 229910002804 graphite Inorganic materials 0.000 claims description 13
- 239000010439 graphite Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 description 16
- 238000004901 spalling Methods 0.000 description 15
- 239000013078 crystal Substances 0.000 description 4
- 230000002542 deteriorative effect Effects 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は炭化ケイ素結晶間に充填されているケイ素中へ
黒鉛を分散させることにより耐スポーリング性を高めた
、炭化ケイ素系複合材料に関するものである。該材料は
高温で強度と耐スポーリング性を要求される耐熱構造材
として有用な材料である。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a silicon carbide-based composite material that has improved spalling resistance by dispersing graphite into silicon filled between silicon carbide crystals. It is. This material is useful as a heat-resistant structural material that requires strength and spalling resistance at high temperatures.
炭化ケイ素材料はその優れた耐熱性ゆえに、比較的古く
から高温用溝造材として用いられてきた。Silicon carbide materials have been used as high-temperature groove construction materials for a relatively long time due to their excellent heat resistance.
構造材としての強度を確保するためには炭化ケイ素材料
をできるだけち密化させる必要があり、様様な試みがな
されている。炭化ケイ素結晶間の気孔に、高温で溶融し
た金属ケイ素を含浸させた炭化ケイ素−ケイ素複合材料
はその一例である。In order to ensure strength as a structural material, it is necessary to make the silicon carbide material as dense as possible, and various attempts have been made. One example is a silicon carbide-silicon composite material in which the pores between silicon carbide crystals are impregnated with metallic silicon molten at high temperature.
金属ケイ素２含浸させた炭化ケイ素−ケイ素複合材料は
炭化ケイ素のみよりなる材料より１よ、確かに高強度と
なっている。しかしながら、ち密であることは同時に該
複合材料の耐スポーリング性を失わせることとなり、結
局は耐熱構造材として改良が求められでいた。Silicon carbide-silicon composites impregnated with metallic silicon 2 are certainly stronger than materials consisting only of silicon carbide. However, being dense also causes the composite material to lose its spalling resistance, and as a result, improvements as a heat-resistant structural material have not been sought.
本発明の目的は炭化ケイ素結晶間の気孔に金属ケイ素を
含浸させる際、同時にケイ素中に黒鉛粒子を分散させる
ことにより、ち密で、高強度で、しかも耐スポーリング
性に優れる炭化ケイ素系複合材料を提供することにある
。The purpose of the present invention is to create a silicon carbide-based composite material that is dense, has high strength, and has excellent spalling resistance by impregnating metallic silicon into the pores between silicon carbide crystals and simultaneously dispersing graphite particles in the silicon. Our goal is to provide the following.
すなわち本発明は炭化ケイ素−ケイ素複合材料において
、該複合材料中のケイ素に、未反応の黒鉛粒子を４〜１
０重量％分散させたことを特徴とする特
〔作用・構成〕
炭化ケイ素−ケイ素複合材料は、一般に炭化ケイ素粉末
と黒鉛粉末とを母材とした成形体を、溶融ケイ素の存在
下で反応焼結させることによりつくられる。該成形体中
の黒鉛粉末はケイ素と反応（ｓｉｌｉｃｉｄｉｎｇ）
して炭化ケイ素となり、余分の金属ケイ素が炭化ケイ素
の結晶間に充填されで、ち密な炭化ケイ素−ケイ素複合
材料となっている。That is, the present invention provides a silicon carbide-silicon composite material in which 4 to 1 unreacted graphite particles are added to silicon in the composite material.
Silicon carbide-silicon composite materials are generally produced by reaction-sintering a molded body made of silicon carbide powder and graphite powder in the presence of molten silicon. It is created by tying it together. Graphite powder in the compact reacts with silicon (siliciding)
The silicon carbide becomes silicon carbide, and excess metallic silicon is filled between the silicon carbide crystals, forming a dense silicon carbide-silicon composite material.
本発明によｒば、該成形体を溶融ケイ素の存在下で反応
焼結させる際、成形体中の黒鉛粉末はケイ素と完全には
反応せず、一部未反応の黒鉛粒子としで、充填された金
属ケイ素のなかに分散している。炭化ケイ素−ケイ素複
合材料中に黒鉛粒子が未反応な形で残っていることは、
該複合材料のＸ線回折結果により確認される。According to the present invention, when the molded body is reacted and sintered in the presence of molten silicon, the graphite powder in the molded body does not completely react with silicon, and some of the graphite powder remains as unreacted graphite particles. dispersed in metallic silicon. The fact that graphite particles remain in an unreacted form in the silicon carbide-silicon composite material
This is confirmed by the X-ray diffraction results of the composite material.
さて材料の耐スポーリング性能を測定する方法はいろい
ろあるが、ヤング率を便っで耐スポーリング性を比較し
た。耐スポーリング性を評価する物理量としでは、式（
１）の熱衝撃破壊抵抗係数尺がよく知られでいる。There are various methods for measuring the spalling resistance of materials, but we compared the spalling resistance using Young's modulus. As a physical quantity to evaluate spalling resistance, the formula (
1) Thermal shock fracture resistance coefficient scale is well known.
Ｒ＝Ｓ（１−１’）／（Ｅｊ） ＜１）ここで
Ｓ：破壊強度 ノ：ボアッソン比 Ｅ：ヤング率 メ
：熱膨張係数 である。式（１）によれば強度Ｓが大キ
＜、ヤング率Ｅの小さいものが耐スポーリング性に優れ
る。R=S(1-1')/(Ej) <1) Here, S: breaking strength, N: Boisson's ratio, E: Young's modulus, M: coefficient of thermal expansion. According to formula (1), a material with a large strength S and a small Young's modulus E has excellent spalling resistance.
本発明による黒鉛粒子を分散させた炭化ケイ素系複合材
料は、従来の炭化ケイ素−ケイ素複合材料と比較して強
度を劣化させずにヤング率を小さくしたものであり、式
（１）から耐スポーリング性が改善されていることがわ
かる。The silicon carbide-based composite material in which graphite particles are dispersed according to the present invention has a lower Young's modulus without deteriorating the strength compared to the conventional silicon carbide-silicon composite material. It can be seen that polling performance has been improved.
つぎに該複合材料の強度を劣化させずに耐スポーリング
性を与えるには、黒鉛粒子が該複合材料に対して４〜１
０重量％の範囲で存在すればよいことが、各種の実験か
られかった。すなわち黒鉛粒子が母材に比して４重量％
未満の場合には耐スポーリング性を向上させる効果はな
く、１０重量％以上の場合には該複合材料の強度は著し
く劣化する。Next, in order to provide spalling resistance without deteriorating the strength of the composite material, it is necessary to add graphite particles of 4 to 1
Various experiments have shown that it is sufficient if the amount is present in the range of 0% by weight. In other words, the graphite particles are 4% by weight compared to the base material.
When the amount is less than 10% by weight, there is no effect of improving spalling resistance, and when it is 10% by weight or more, the strength of the composite material is significantly deteriorated.
粒径１２０μｍ以下の炭化ケイ素粉末と、粒径４０μｍ
以下の黒鉛粉末とｆｅ６０対４０対重０比で配合する。Silicon carbide powder with a particle size of 120 μm or less and a particle size of 40 μm
It is blended with the following graphite powder in a Fe ratio of 60:40:0 by weight.
これに通常もちいられるバインダー類を添加した後よく
混練し、外径１６ ｍｍ１内径１１皿長さ１５Ｑｍｍの
チューブ状に成形した。これを１９００℃で溶融した金
属ケイ素に約１分間浸しで、炭化ケイ素・黒鉛粉末の反
応焼結と、金属ケイ素の含浸を同時に行なった。この結
果えられた炭化ケイ素系複合材料は気孔率１％の、ち密
なものであり、該複合材料中には９重量％の黒鉛粒子が
分散しでいた。該複合材料の曲′げ強度は２０００Ｋｇ
／ｃｍ”と十分に大きく、またヤング率は１．８ｘｌＯ
’Ｋｇ／ｃｍ’と小さく、耐スポーリング性も確保され
た。After adding commonly used binders to this, the mixture was thoroughly kneaded and formed into a tube having an outer diameter of 16 mm, an inner diameter of 11 plates, and a length of 15 Q mm. This was immersed in metal silicon melted at 1900° C. for about 1 minute to simultaneously perform reaction sintering of the silicon carbide/graphite powder and impregnation with metal silicon. The resulting silicon carbide composite material was dense with a porosity of 1%, and 9% by weight of graphite particles were dispersed in the composite material. The bending strength of the composite material is 2000Kg.
/cm”, which is sufficiently large, and the Young’s modulus is 1.8xlO
It is as small as 'Kg/cm' and has good spalling resistance.
〔比較例１〕
前記実施例と同様の、炭化ケイ素粉末と黒鉛粉末を母材
とした成形体を準備する。該成形体を最大１４００μｍ
の金属ケイ素粉末の中に埋め込み、これを電気炉内に入
れて１８５０℃の温度で約１０分間加熱した。この結果
得られた炭化ケイ素−ケイ素複合材料の中には２重量％
の黒鉛粒子が分散していた。[Comparative Example 1] A molded body using silicon carbide powder and graphite powder as base materials is prepared as in the above example. The molded body has a maximum thickness of 1400 μm.
This was placed in an electric furnace and heated at a temperature of 1850° C. for about 10 minutes. The resulting silicon carbide-silicon composite contained 2% by weight
graphite particles were dispersed.
該複合材料の曲げ強度は１９７０ Ｋｇ／ｃｍ’と十分
に大きいものであったが、ヤング率も３．ｌＸ１Ｏ’Ｋ
ｇ／ｃｍ”と大きいため、スポーリングには弱い材質で
あった。The bending strength of the composite material was 1970 Kg/cm', which was sufficiently high, but the Young's modulus was also 3. lX1O'K
g/cm", so it was a material that was susceptible to spalling.
〔比較例２〕
前記実施例と同様の、炭化ケイ素粉末と黒鉛粉末を母材
とした成形体を準備する。該成形体を最大１４００μｍ
の金属ケイ素粉末の中に埋め込み、これを電気炉内に入
れて１６００ｃの温度で約１０分間加熱した。この結果
得られた炭化ケイ素−ケイ素複合材料の中には１８重量
％の黒鉛粒子が分散していた。[Comparative Example 2] A molded body using silicon carbide powder and graphite powder as base materials is prepared, similar to the above example. The molded body has a maximum thickness of 1400 μm.
This was placed in an electric furnace and heated at a temperature of 1600°C for about 10 minutes. In the resulting silicon carbide-silicon composite material, 18% by weight of graphite particles were dispersed.
該複合材料のヤング率は２． ＯＸ １０’ Ｋｇ／ｃ
ｍ”と小さいが、強度も８７０Ｋｇ／ｃｍ”と小さく、
構造材料としでは不適格なものであった。The Young's modulus of the composite material is 2. OX 10' Kg/c
Although it is small at 870Kg/cm, its strength is also small at 870Kg/cm.
It was unsuitable as a structural material.
以上述べたように本発明によれば、炭化ケイ素−ケイ素
複合材料へ４〜１０重量％の黒鉛粒子を分散させるだけ
で、該複合材料の強度を劣化させる７ことなく、耐スポ
ーリング性を向上させることができた。As described above, according to the present invention, by simply dispersing 4 to 10% by weight of graphite particles into a silicon carbide-silicon composite material, spalling resistance can be improved without deteriorating the strength of the composite material. I was able to do it.
従来、高温用構造材として、炭化ケイ素−ケイ素複合材
料は耐スポーリング性に劣るため、大さな問題となって
いたが、本発明に係る炭化ケイ素系複合材料は、耐スポ
ーリング性の向上をみたことにより、今後、ますます期
待されるファインセラミックスの構造材への用途髭発に
大きな役割を担うことが予想される。Conventionally, silicon carbide-silicon composite materials have been used as high-temperature structural materials, resulting in a major problem due to their poor spalling resistance, but the silicon carbide-based composite material according to the present invention has improved spalling resistance. As a result, it is expected that fine ceramics will play a major role in the increasingly anticipated use of fine ceramics as structural materials.
Claims (1)
未反応の黒鉛粒子を４〜１０重量％分散させたことを特
徴とする炭化ケイ素系複合材料。1. A silicon carbide-based composite material comprising 4 to 10% by weight of unreacted graphite particles dispersed in the silicon carbide-silicon composite material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61147176A JPS638264A (en) | 1986-06-25 | 1986-06-25 | Silicon carbide base composite material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61147176A JPS638264A (en) | 1986-06-25 | 1986-06-25 | Silicon carbide base composite material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS638264A true JPS638264A (en) | 1988-01-14 |
Family
ID=15424301
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61147176A Pending JPS638264A (en) | 1986-06-25 | 1986-06-25 | Silicon carbide base composite material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS638264A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002040424A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators, Ltd | Honeycomb structure and method for manufacture thereof |
| WO2002040423A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators,Ltd. | Silicon carbide based porous article and method for preparing the same |
| JP2008239476A (en) * | 1997-09-05 | 2008-10-09 | Element Six Ltd | Diamond-silicon carbide-silicon composite |
-
1986
- 1986-06-25 JP JP61147176A patent/JPS638264A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008239476A (en) * | 1997-09-05 | 2008-10-09 | Element Six Ltd | Diamond-silicon carbide-silicon composite |
| WO2002040424A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators, Ltd | Honeycomb structure and method for manufacture thereof |
| WO2002040423A1 (en) * | 2000-11-17 | 2002-05-23 | Ngk Insulators,Ltd. | Silicon carbide based porous article and method for preparing the same |
| JP2002154882A (en) * | 2000-11-17 | 2002-05-28 | Ngk Insulators Ltd | Silicon carbide porous body and method for producing the same |
| US6746748B2 (en) | 2000-11-17 | 2004-06-08 | Ngk Insulators, Ltd. | Honeycomb structure and process for production thereof |
| US6777114B2 (en) | 2000-11-17 | 2004-08-17 | Ngk Insulators, Ltd. | Silicon carbide-based porous body and process for production thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS638264A (en) | Silicon carbide base composite material | |
| JPS5864279A (en) | Non-oxide ceramics sintered body | |
| JPS6077174A (en) | Manufacture of silicon nitride sintered body | |
| JPS6236987B2 (en) | ||
| JPS5957964A (en) | Manufacture of fiber reinforced silicon nitride sintered bo-dy | |
| JPH02302368A (en) | Silicon carbide sintered compact having high toughness and its production thereof | |
| JPS5957965A (en) | Manufacture of fiber reinforced silicon nitride sintered bo-dy | |
| JPS59207873A (en) | Manufacture of high density silicon carbide sintered body | |
| JP2549976B2 (en) | Heat-resistant mullite sintered body | |
| JPS6191063A (en) | Powdery refractory material containing silicon carbide shortfiber and manufacture | |
| JPS6374978A (en) | Ceramic composite body | |
| JPS5954678A (en) | Manufacture of fiber reinforced silicon nitride sintered body | |
| JPS60246273A (en) | Amorphous refractory composition | |
| JPS6042190B2 (en) | Refractory material for blast furnace tapping | |
| JPS6345173A (en) | High toughness ceramic sintered body and manufacture | |
| JP2621896B2 (en) | Silicon nitride-based composite ceramics and method for producing the same | |
| JPS62158172A (en) | Manufacture of fiber reinforced ceramic | |
| JPS6212191B2 (en) | ||
| JPS59107961A (en) | Carbon-containing refractories | |
| JPS63117966A (en) | Manufacture of boron nitride base sintered body | |
| SU773030A1 (en) | Charge for making ceramic material | |
| JPH0437454A (en) | Nozzle for casting wide and thin slab | |
| JPS598669A (en) | Silicon nitride composite sintered body and manufacture | |
| JP2000107839A (en) | Manufacture of plate for slide gate | |
| JPS63103870A (en) | Fine powder zrb2-containig monolithic refractories |