JPS6378520A - Phosphorus diffusion and diffusing method thereof - Google Patents
Phosphorus diffusion and diffusing method thereofInfo
- Publication number
- JPS6378520A JPS6378520A JP22092886A JP22092886A JPS6378520A JP S6378520 A JPS6378520 A JP S6378520A JP 22092886 A JP22092886 A JP 22092886A JP 22092886 A JP22092886 A JP 22092886A JP S6378520 A JPS6378520 A JP S6378520A
- Authority
- JP
- Japan
- Prior art keywords
- phosphorus
- semiconductor
- diffusion source
- polymer
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 38
- 229910052698 phosphorus Inorganic materials 0.000 title claims abstract description 33
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 239000011574 phosphorus Substances 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 229920000642 polymer Polymers 0.000 claims abstract description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000002019 doping agent Substances 0.000 abstract description 7
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000004380 ashing Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 101150101918 TSC22D3 gene Proteins 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔４既 要〕
五酸化リンと酸素プラズマで灰化可能なポリマーとを溶
剤に溶かし、半導体上に塗布しプラズマで容易にリンを
半導体に導入する。[Detailed Description of the Invention] [4 Summary] Phosphorus pentoxide and a polymer that can be ashed by oxygen plasma are dissolved in a solvent and applied onto a semiconductor to easily introduce phosphorus into the semiconductor using plasma.
本発明は半導体装置の製造に際し、半導体中へ拡散させ
るためのリン拡散源とその拡散方法に係る。The present invention relates to a phosphorus diffusion source and a method for diffusing the phosphorus into a semiconductor when manufacturing a semiconductor device.
従来半導体中にアクセプター又はドナーとなる原子（ド
ーパント）を導入する方法としては熱拡散法及びイオン
打込み法がよく知られている。Conventionally, thermal diffusion and ion implantation are well known methods for introducing atoms (dopants) to serve as acceptors or donors into semiconductors.
上記熱拡散法はドーパントを導入する半導体を６００℃
以上の高温にまで加熱し、拡散源（拡散ソース）からド
ーパントを半導体中に拡散させる技術である。このよう
な拡散技術で使用される拡散源として従来、Ｐ（リン）
やＢ（ホウ素）を含み且つ熱を加えることにより酸化物
層を形成する例えばＰＢＦ、ＯＣＤ （商品名、東京応
化製）等が知られている。これらの拡散源はプラズマを
用いてＰやＢの不純物拡散を行なった後、残存する。The above thermal diffusion method heats the semiconductor into which dopants are introduced at 600°C.
This is a technique in which dopants are heated to such high temperatures as to diffuse dopants into a semiconductor from a diffusion source. Traditionally, P (phosphorus) is used as a diffusion source in such diffusion techniques.
For example, PBF, OCD (trade name, manufactured by Tokyo Ohka Chemical Co., Ltd.), etc., which contain B (boron) and form an oxide layer by applying heat, are known. These diffusion sources remain after P and B impurity diffusion is performed using plasma.
このためＰ、Ｂの不純物拡散後、拡散源として残った拡
散源を別途ｗｅｔエツチング等で剥湘除去する必要があ
った。Therefore, after the P and B impurities are diffused, it is necessary to separately remove the remaining diffusion source by wet etching or the like.
本発明はドーパントを含む層からなる拡散源をプラズマ
で照射により半導体中にドーパントを拡散させた後、上
記層を除去する工程が不要となる拡散源とその拡散方法
を提供することを目的とする。An object of the present invention is to provide a diffusion source and a method for diffusing the same, which eliminates the need for a step of removing the layer after diffusing the dopant into a semiconductor by irradiating a diffusion source comprising a layer containing a dopant with plasma. .
上記問題点は本発明によれば五酸化リンと酸素′プラズ
マで灰化可能なポリマーを含むことを特徴とするリン拡
散源にって解決される。The above problems are solved according to the invention by a phosphorus diffusion source characterized in that it contains phosphorus pentoxide and a polymer that can be ashed in an oxygen plasma.
更に本発明によれば上記拡散源を用いる方法として該リ
ン拡散源を半導体基板上に塗布し、酸素プラズマを該リ
ン拡散源に照射することによってリンを該半導体基板中
に導入すると共に該拡散源を半導体基板から除去するこ
とを特徴とするリン拡散方法によって解決される。Further, according to the present invention, as a method of using the above diffusion source, the phosphorus diffusion source is coated on a semiconductor substrate, and phosphorus is introduced into the semiconductor substrate by irradiating the phosphorus diffusion source with oxygen plasma, and the diffusion source is The problem is solved by a phosphorus diffusion method characterized by removing phosphorus from a semiconductor substrate.
本発明によれば、リンを含む五酸化リン（ＰｚＯｓ）を
酸素プラズマで灰化可能なポリマーに混合させたリン拡
散源であるため半導体上に該リン拡散源を形成して酸素
プラズマを照射すれば該拡散源から半４体中にリンが拡
散せしめられ同時に拡散源が灰化、除去させる。According to the present invention, since the phosphorus diffusion source is made by mixing phosphorus pentoxide (PzOs) containing phosphorus with a polymer that can be ashed with oxygen plasma, it is possible to form the phosphorus diffusion source on a semiconductor and irradiate it with oxygen plasma. In this case, phosphorus is diffused into the halves from the diffusion source, and at the same time, the diffusion source is incinerated and removed.
以下本発明の詳細な説明する。 The present invention will be explained in detail below.
五酸化リン（Ｐｔａｓ） ｏ、 ７ ｇを２−メトキシ
エタノール５０ｃｃに溶かし更に酸素プラズマで灰化（
アッシング）可能な市販のフォトレジスト（例えば東京
応化型ＴＳＭＲ，０ＦＰＲ，０ＮＰＲ等）と混合し、リ
ン拡散源ポリマーを形成し、次に単結晶シリコン基板上
に塗布し空気中で７０℃の温度に熱して溶媒を飛ばし約
１５００人の厚さのリン拡散層を設け、更にこの拡散層
に２．４５ＧＩｌｚ、 １．５ ｋＷ、０□２５０ｃ
ｃ。7 g of phosphorus pentoxide (Ptas) was dissolved in 50 cc of 2-methoxyethanol and incinerated with oxygen plasma (
A phosphorus diffusion source polymer is formed by mixing with a commercially available photoresist capable of ashing (for example, Tokyo Ohka TSMR, 0FPR, 0NPR, etc.), which is then coated on a single crystal silicon substrate and heated to a temperature of 70°C in air. Heat to evaporate the solvent and create a phosphorus diffusion layer with a thickness of about 1,500 mm, and then apply 2.45 GIlz, 1.5 kW, 0□250c to this diffusion layer.
c.
０、３ Ｔｏｒｒのプラズマを約１０分間照射し、リン
を半導体に導入すると共に脱リン拡散ｒＡ（ポリマ一部
）を灰化除去した。その後ｎｚｏ□／Ｈ２ＳＯ４とＨＦ
で基板表面を洗浄し８００℃３０分間アニールし半導体
中に導入されたリン（Ｐ）を活性化した結果、Ｐ型基板
がＮ型に変化しているのがわかった。具体的には、基板
の表面抵抗がＰ型２００Ω／口程度であったものがアニ
ール後はＮ型６００Ω／口となった。Plasma of 0.3 Torr was irradiated for about 10 minutes to introduce phosphorus into the semiconductor and remove the dephosphorized diffused rA (part of the polymer) by ashing. Then nzo□/H2SO4 and HF
As a result of cleaning the substrate surface and annealing it at 800° C. for 30 minutes to activate the phosphorus (P) introduced into the semiconductor, it was found that the P-type substrate had changed to N-type. Specifically, the surface resistance of the substrate was about 200 Ω/hole for P type, but became 600 Ω/hole for N type after annealing.
以上説明したように本発明によればプラズマを照射する
ことによって拡散源からリンが半導体中に導入（拡散）
されたしかも同時に脱リン拡散源が灰化除去されるので
工程短縮がなされる。As explained above, according to the present invention, phosphorus is introduced (diffused) into a semiconductor from a diffusion source by irradiating plasma.
Moreover, the dephosphorization diffusion source is removed by ashing at the same time, thereby shortening the process.
Claims (1)
含むことを特徴とするリン拡散源。 ２、前記五酸化リンとポリマーとを溶剤に溶かすことを
特徴とする特許請求の範囲第１項記載のリン拡散源。 ３、五酸化リンと酸素プラズマで灰化可能なポリマーを
含むリン拡散源を半導体基板上に塗布し、酸素プラズマ
を該リン拡散源に照射することによってリンを該半導体
基板中に導入すると共に脱リンされた該拡散源を半導体
基板から除去することを特徴とするリン拡散方法。[Claims] 1. A phosphorus diffusion source comprising phosphorus pentoxide and a polymer that can be ashed with oxygen plasma. 2. The phosphorus diffusion source according to claim 1, wherein the phosphorus pentoxide and polymer are dissolved in a solvent. 3. A phosphorus diffusion source containing phosphorus pentoxide and a polymer that can be ashed with oxygen plasma is applied onto a semiconductor substrate, and phosphorus is introduced into the semiconductor substrate and desorbed by irradiating the phosphorus diffusion source with oxygen plasma. A phosphorus diffusion method comprising removing the phosphorused diffusion source from a semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22092886A JPS6378520A (en) | 1986-09-20 | 1986-09-20 | Phosphorus diffusion and diffusing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22092886A JPS6378520A (en) | 1986-09-20 | 1986-09-20 | Phosphorus diffusion and diffusing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6378520A true JPS6378520A (en) | 1988-04-08 |
Family
ID=16758749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22092886A Pending JPS6378520A (en) | 1986-09-20 | 1986-09-20 | Phosphorus diffusion and diffusing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6378520A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009118795A (en) * | 2007-11-15 | 2009-06-04 | Mitsubishi Agricult Mach Co Ltd | Fertilizing implement |
-
1986
- 1986-09-20 JP JP22092886A patent/JPS6378520A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009118795A (en) * | 2007-11-15 | 2009-06-04 | Mitsubishi Agricult Mach Co Ltd | Fertilizing implement |
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