JPS637689B2 - - Google Patents

Info

Publication number
JPS637689B2
JPS637689B2 JP4027481A JP4027481A JPS637689B2 JP S637689 B2 JPS637689 B2 JP S637689B2 JP 4027481 A JP4027481 A JP 4027481A JP 4027481 A JP4027481 A JP 4027481A JP S637689 B2 JPS637689 B2 JP S637689B2
Authority
JP
Japan
Prior art keywords
thyristor
parallel
main
circuit
thyristors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4027481A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57155838A (en
Inventor
Shigeo Konishi
Osamu Motoyoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP4027481A priority Critical patent/JPS57155838A/ja
Priority to DE19823210484 priority patent/DE3210484C2/de
Publication of JPS57155838A publication Critical patent/JPS57155838A/ja
Publication of JPS637689B2 publication Critical patent/JPS637689B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M5/00—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases
    • H02M5/02—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC
    • H02M5/04—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters
    • H02M5/22—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M5/25—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means
    • H02M5/257—Conversion of AC power input into AC power output, e.g. for change of voltage, for change of frequency, for change of number of phases without intermediate conversion into DC by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a thyratron or thyristor type requiring extinguishing means using semiconductor devices only
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
    • H02M1/096—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H03K17/105—Modifications for increasing the maximum permissible switched voltage in thyristor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/722—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit
    • H03K17/723—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region with galvanic isolation between the control circuit and the output circuit using transformer coupling
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
    • H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Power Conversion In General (AREA)
  • Electronic Switches (AREA)
  • Thyristor Switches And Gates (AREA)
JP4027481A 1981-03-23 1981-03-23 Anti-parallel thyristor triggering device Granted JPS57155838A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4027481A JPS57155838A (en) 1981-03-23 1981-03-23 Anti-parallel thyristor triggering device
DE19823210484 DE3210484C2 (de) 1981-03-23 1982-03-22 Zündschaltung für antiparallel geschaltete Thyristoren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4027481A JPS57155838A (en) 1981-03-23 1981-03-23 Anti-parallel thyristor triggering device

Publications (2)

Publication Number Publication Date
JPS57155838A JPS57155838A (en) 1982-09-27
JPS637689B2 true JPS637689B2 (enrdf_load_stackoverflow) 1988-02-18

Family

ID=12576046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4027481A Granted JPS57155838A (en) 1981-03-23 1981-03-23 Anti-parallel thyristor triggering device

Country Status (2)

Country Link
JP (1) JPS57155838A (enrdf_load_stackoverflow)
DE (1) DE3210484C2 (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3426769A1 (de) * 1984-07-17 1986-01-23 Siemens Ag Schaltungsanordnung zur ueberwachung eines thyristors
DE3627017A1 (de) * 1986-08-09 1988-02-18 Licentia Gmbh Hochspannungs-halbleiterschuetz
DE3731393A1 (de) * 1987-09-18 1989-04-06 Bosch Gmbh Robert Hochspannungsschalter
DE19844823C1 (de) * 1998-09-30 1999-10-28 Siemens Ag Thyristorschaltung

Also Published As

Publication number Publication date
DE3210484A1 (de) 1982-09-30
JPS57155838A (en) 1982-09-27
DE3210484C2 (de) 1983-12-01

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