JPS6373939U - - Google Patents
Info
- Publication number
- JPS6373939U JPS6373939U JP1986168764U JP16876486U JPS6373939U JP S6373939 U JPS6373939 U JP S6373939U JP 1986168764 U JP1986168764 U JP 1986168764U JP 16876486 U JP16876486 U JP 16876486U JP S6373939 U JPS6373939 U JP S6373939U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- plating
- plated
- cylinder
- onto
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007747 plating Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
Landscapes
- Electrodes Of Semiconductors (AREA)
Description
第１図はこの考案の一実施例の半導体製造装置
を示す要部側断面図、第２図は従来のバンプ電極
メツキ装置の要部側断面図、第３図及び第４図は
メツキされる半導体ウエーハの平面図及び―
線拡大断面図である。 １……メツキ筒、４……下部電極、５……半導
体ウエーハ、６……上部電極、７……メツキ液、
１５……バンプ電極、１６……プリウエツト用ノ
ズル。
を示す要部側断面図、第２図は従来のバンプ電極
メツキ装置の要部側断面図、第３図及び第４図は
メツキされる半導体ウエーハの平面図及び―
線拡大断面図である。 １……メツキ筒、４……下部電極、５……半導
体ウエーハ、６……上部電極、７……メツキ液、
１５……バンプ電極、１６……プリウエツト用ノ
ズル。
Claims (1)
- 半導体ウエーハを被メツキ面を下にして保持す
るメツキ筒と、メツキ筒上の半導体ウエーハの上
面に接触する上部電極と、メツキ筒内を上昇して
半導体ウエーハ下面に噴流するメツキ液中に配置
された下部電極を具備し、半導体ウエーハの被メ
ツキ面にメツキ液を噴流させながら上下電極間に
メツキ電圧を印加してメツキを行い半導体ウエー
ハに部分的にバンプ電極を形成する噴流式メツキ
装置であつて、上記メツキ筒内に半導体ウエーハ
の被メツキ面に水分を噴霧するプリウエツト用ノ
ズルを配置したことを特徴とする半導体製造装置
。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986168764U JPH039330Y2 (ja) | 1986-10-31 | 1986-10-31 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1986168764U JPH039330Y2 (ja) | 1986-10-31 | 1986-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6373939U true JPS6373939U (ja) | 1988-05-17 |
| JPH039330Y2 JPH039330Y2 (ja) | 1991-03-08 |
Family
ID=31101945
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1986168764U Expired JPH039330Y2 (ja) | 1986-10-31 | 1986-10-31 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH039330Y2 (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195026A (ja) * | 1989-12-25 | 1991-08-26 | Casio Comput Co Ltd | メッキによる電極の形成方法 |
-
1986
- 1986-10-31 JP JP1986168764U patent/JPH039330Y2/ja not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03195026A (ja) * | 1989-12-25 | 1991-08-26 | Casio Comput Co Ltd | メッキによる電極の形成方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH039330Y2 (ja) | 1991-03-08 |