JPS6372161A - 静電誘導型サイリスタ - Google Patents

静電誘導型サイリスタ

Info

Publication number
JPS6372161A
JPS6372161A JP62059755A JP5975587A JPS6372161A JP S6372161 A JPS6372161 A JP S6372161A JP 62059755 A JP62059755 A JP 62059755A JP 5975587 A JP5975587 A JP 5975587A JP S6372161 A JPS6372161 A JP S6372161A
Authority
JP
Japan
Prior art keywords
region
gate
type
channel
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62059755A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0126189B2 (enExample
Inventor
Junichi Nishizawa
潤一 西澤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Priority to JP62059755A priority Critical patent/JPS6372161A/ja
Publication of JPS6372161A publication Critical patent/JPS6372161A/ja
Publication of JPH0126189B2 publication Critical patent/JPH0126189B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations

Landscapes

  • Thyristors (AREA)
JP62059755A 1987-03-12 1987-03-12 静電誘導型サイリスタ Granted JPS6372161A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62059755A JPS6372161A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62059755A JPS6372161A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP760979A Division JPS5599772A (en) 1978-03-17 1979-01-24 Electrostatic induction type thyristor

Publications (2)

Publication Number Publication Date
JPS6372161A true JPS6372161A (ja) 1988-04-01
JPH0126189B2 JPH0126189B2 (enExample) 1989-05-22

Family

ID=13122388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62059755A Granted JPS6372161A (ja) 1987-03-12 1987-03-12 静電誘導型サイリスタ

Country Status (1)

Country Link
JP (1) JPS6372161A (enExample)

Also Published As

Publication number Publication date
JPH0126189B2 (enExample) 1989-05-22

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