JPS6371537U - - Google Patents

Info

Publication number
JPS6371537U
JPS6371537U JP1987104590U JP10459087U JPS6371537U JP S6371537 U JPS6371537 U JP S6371537U JP 1987104590 U JP1987104590 U JP 1987104590U JP 10459087 U JP10459087 U JP 10459087U JP S6371537 U JPS6371537 U JP S6371537U
Authority
JP
Japan
Prior art keywords
electron beam
conductor
generating means
grid
irradiating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1987104590U
Other languages
English (en)
Other versions
JPH0729639Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS6371537U publication Critical patent/JPS6371537U/ja
Application granted granted Critical
Publication of JPH0729639Y2 publication Critical patent/JPH0729639Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/305—Contactless testing using electron beams
    • G01R31/306—Contactless testing using electron beams of printed or hybrid circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Short-Circuits, Discontinuities, Leakage, Or Incorrect Line Connections (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Description

【図面の簡単な説明】
第１図は、本考案を組み込んだテスト・システ
ムの構成を示す概略図である。第２図は、被験配
線網を示す試料の切取斜視概略図である。第３図
は、２次電子の飛跡に及ぼすグリツド・バイアス
の効果を図示した試料の線図である。第４図は、
様々なグリツド・バイアス電位の場合について２
次電子放出収率を衝突ビームの１次電子エネルギ
ーの関数として示したグラフである。 １０……真空カラム、１２……探査ガン、１６
……偏向コイル、１８……偏向発生装置、２０…
…試料処理用真空室、３６……試料、３８……シ
ステム制御装置、４０……試料運搬制御装置、４
２，４４……広域照射ガン、４５……２次電子検
出装置、４６……信号処理装置、４８……グリツ
ド、５０……グリツド・バイアス発生装置、５２
，５４……導体、１０５……帯電ビーム、１０６
……読取ビーム。

Claims (1)

  1. 【実用新案登録請求の範囲】 (1) 絶縁材料よりなる構造体に組み込まれ、か
    つ該構造体の少なくとも１つの面においてその端
    部が露出している導体の電気的な連続性を物理的
    に接触することなくテストするための装置であつ
    て、 上記導体の端部が露出した上記構造体の１つの
    面の少なくとも一部に、上記導体を帯電させるた
    めの電子ビームを照射するための電子ビーム発生
    手段と、 上記１つの面の選択された部分に、上記導体の
    帯電状態を読み取るための電子ビームを照射する
    ための電子ビーム発生手段と、 上記１つの面と離して配置したグリツドと、 上記グリツドと電気的に接続されて、上記１つ
    の面が上記導体を帯電させるための電子ビームに
    よつて照射される際には上記グリツドの上記１つ
    の面に対する電位を負である第１の値に保持する
    とともに、上記１つの面が上記導体の帯電状態を
    読み取るための電子ビームによつて照射される際
    には上記グリツドの上記１つの面に対する電位を
    第２の値に保持するグリツド電位制御手段と、 上記１つの面から放出される二次電子を検出す
    るための手段 とを含むテスト装置。 (2) 上記導体を帯電させるための電子ビームを
    照射するための電子ビーム発生手段と上記導体の
    帯電状態を読み取るための電子ビームを照射する
    ための電子ビーム発生手段が同一の走査電子ビー
    ム発生手段である実用新案登録請求の範囲第１項
    記載のテスト装置。 (3) 上記導体を帯電させるための電子ビームを
    照射するための電子ビーム発生手段が広範囲照射
    電子ビーム発生手段であり、上記導体の帯電状態
    を読み取るための電子ビームを照射するための電
    子ビーム発生手段が走査電子ビーム発生手段であ
    る実用新案登録請求の範囲第１項記載のテスト装
    置。 (4) 上記グリツドの上記１つの面に対する電位
    の第２の値はゼロまたは正である実用新案登録請
    求の範囲第１項ないし第３項の何れかに記載のテ
    スト装置。
JP1987104590U 1986-10-30 1987-07-09 テスト装置 Expired - Lifetime JPH0729639Y2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/925,764 US4843330A (en) 1986-10-30 1986-10-30 Electron beam contactless testing system with grid bias switching
US925764 1986-10-30

Publications (2)

Publication Number Publication Date
JPS6371537U true JPS6371537U (ja) 1988-05-13
JPH0729639Y2 JPH0729639Y2 (ja) 1995-07-05

Family

ID=25452199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987104590U Expired - Lifetime JPH0729639Y2 (ja) 1986-10-30 1987-07-09 テスト装置

Country Status (4)

Country Link
US (1) US4843330A (ja)
EP (1) EP0266535B1 (ja)
JP (1) JPH0729639Y2 (ja)
DE (1) DE3783864T2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333161A (ja) * 2005-08-05 2005-12-02 Renesas Technology Corp 荷電粒子ビームを用いた検査装置

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH065691B2 (ja) * 1987-09-26 1994-01-19 株式会社東芝 半導体素子の試験方法および試験装置
US4963823A (en) * 1988-06-27 1990-10-16 Siemens Aktiengesellschaft Electron beam measuring instrument
US4943769A (en) * 1989-03-21 1990-07-24 International Business Machines Corporation Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams
EP0402499A1 (de) * 1989-06-13 1990-12-19 Siemens Aktiengesellschaft Verfahren zur Prüfung einer Leiterplatte mit einer Teilchensonde
EP0405672A1 (en) * 1989-06-30 1991-01-02 Koninklijke Philips Electronics N.V. Method of measuring a voltage distribution across a conductor pattern
US5017863A (en) * 1989-10-20 1991-05-21 Digital Equipment Corporation Electro-emissive laser stimulated test
US5210487A (en) * 1991-06-04 1993-05-11 Schlumberger Technologies Inc. Double-gated integrating scheme for electron beam tester
US5258706A (en) * 1991-10-16 1993-11-02 Siemens Aktiengesellschaft Method for the recognition of testing errors in the test of microwirings
US5404110A (en) * 1993-03-25 1995-04-04 International Business Machines Corporation System using induced current for contactless testing of wiring networks
US5614833A (en) * 1994-10-25 1997-03-25 International Business Machines Corporation Objective lens with large field deflection system and homogeneous large area secondary electron extraction field
US5587664A (en) * 1995-07-12 1996-12-24 Exsight Ltd. Laser-induced metallic plasma for non-contact inspection
US5844416A (en) * 1995-11-02 1998-12-01 Sandia Corporation Ion-beam apparatus and method for analyzing and controlling integrated circuits
US6172363B1 (en) * 1996-03-05 2001-01-09 Hitachi, Ltd. Method and apparatus for inspecting integrated circuit pattern
US5781017A (en) * 1996-04-26 1998-07-14 Sandia Corporation Capacitive charge generation apparatus and method for testing circuits
US6163159A (en) * 1997-06-02 2000-12-19 Advantest Corp Charged particle beam test system
US6504393B1 (en) 1997-07-15 2003-01-07 Applied Materials, Inc. Methods and apparatus for testing semiconductor and integrated circuit structures
US5973323A (en) 1997-11-05 1999-10-26 Kla-Tencor Corporation Apparatus and method for secondary electron emission microscope
US6232787B1 (en) * 1999-01-08 2001-05-15 Schlumberger Technologies, Inc. Microstructure defect detection
US6344750B1 (en) * 1999-01-08 2002-02-05 Schlumberger Technologies, Inc. Voltage contrast method for semiconductor inspection using low voltage particle beam
US6252412B1 (en) 1999-01-08 2001-06-26 Schlumberger Technologies, Inc. Method of detecting defects in patterned substrates
WO2000072355A1 (en) * 1999-05-25 2000-11-30 Kla-Tencor Corporation Apparatus and methods for secondary electron emission microscopy with dual beam
US6586733B1 (en) 1999-05-25 2003-07-01 Kla-Tencor Apparatus and methods for secondary electron emission microscope with dual beam
DE69900869T2 (de) * 1999-07-29 2002-07-18 Advantest Corp., Tokio/Tokyo Verfahren und Vorrichtung zur Prüfung eines elektronischen Bauteils
US6359451B1 (en) 2000-02-11 2002-03-19 Image Graphics Incorporated System for contactless testing of printed circuit boards
WO2001058558A2 (en) 2000-02-14 2001-08-16 Eco 3 Max Inc. Process for removing volatile organic compounds from an air stream and apparatus therefor
US7038224B2 (en) * 2002-07-30 2006-05-02 Applied Materials, Israel, Ltd. Contact opening metrology
US7528614B2 (en) * 2004-12-22 2009-05-05 Applied Materials, Inc. Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam
US6812462B1 (en) 2003-02-21 2004-11-02 Kla-Tencor Technologies Corporation Dual electron beam instrument for multi-perspective
US7560939B1 (en) * 2006-02-17 2009-07-14 Kla-Tencor Technologies Corporation Electrical defect detection using pre-charge and sense scanning with prescribed delays
US8748815B2 (en) * 2006-08-31 2014-06-10 Hermes Microvision, Inc. Method and system for detecting or reviewing open contacts on a semiconductor device
US20080296496A1 (en) * 2007-05-30 2008-12-04 Hermes Microvision, Inc. (Taiwan) Method and apparatus of wafer surface potential regulation
GB0713276D0 (en) * 2007-07-09 2007-08-15 Medical Res Council Transmission electron microscope

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196539A (en) * 1981-05-26 1982-12-02 Ibm Test device for electric characteristics

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NL134392C (ja) * 1965-09-21
US3448377A (en) * 1967-10-12 1969-06-03 Atomic Energy Commission Method utilizing an electron beam for nondestructively measuring the dielectric properties of a sample
US3448776A (en) * 1967-10-26 1969-06-10 Marshall John D Picker stick
JPS4823385A (ja) * 1971-07-28 1973-03-26
US3984683A (en) * 1975-05-27 1976-10-05 Rca Corporation Apparatus and method for analyzing biological cells for malignancy
DE2814049A1 (de) * 1978-03-31 1979-10-18 Siemens Ag Verfahren zur beruehrungslosen messung des potentialverlaufs in einem elektronischen bauelement und anordnung zur durchfuehrung des verfahrens
DE2902495A1 (de) * 1979-01-23 1980-07-31 Siemens Ag Einrichtung zur beruehrungslosen potentialmessung
US4415851A (en) * 1981-05-26 1983-11-15 International Business Machines Corporation System for contactless testing of multi-layer ceramics
DE3235461A1 (de) * 1982-09-24 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde
DE3334494A1 (de) * 1983-09-23 1985-04-11 Siemens AG, 1000 Berlin und 8000 München Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde
US4596929A (en) * 1983-11-21 1986-06-24 Nanometrics Incorporated Three-stage secondary emission electron detection in electron microscopes
EP0178431B1 (de) * 1984-09-18 1990-02-28 ICT Integrated Circuit Testing Gesellschaft für HalbleiterprÀ¼ftechnik mbH Gegenfeld-Spektrometer für die Elektronenstrahl-Messtechnik
US4695794A (en) * 1985-05-31 1987-09-22 Santa Barbara Research Center Voltage calibration in E-beam probe using optical flooding

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57196539A (en) * 1981-05-26 1982-12-02 Ibm Test device for electric characteristics

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005333161A (ja) * 2005-08-05 2005-12-02 Renesas Technology Corp 荷電粒子ビームを用いた検査装置

Also Published As

Publication number Publication date
DE3783864T2 (de) 1993-08-19
EP0266535A1 (en) 1988-05-11
JPH0729639Y2 (ja) 1995-07-05
DE3783864D1 (de) 1993-03-11
US4843330A (en) 1989-06-27
EP0266535B1 (en) 1993-01-27

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