DE3783864D1 - System mit umschaltbarer gittervorspannung zum kontaktlosen testen mit einem elektronenstrahl. - Google Patents
System mit umschaltbarer gittervorspannung zum kontaktlosen testen mit einem elektronenstrahl.Info
- Publication number
- DE3783864D1 DE3783864D1 DE8787113821T DE3783864T DE3783864D1 DE 3783864 D1 DE3783864 D1 DE 3783864D1 DE 8787113821 T DE8787113821 T DE 8787113821T DE 3783864 T DE3783864 T DE 3783864T DE 3783864 D1 DE3783864 D1 DE 3783864D1
- Authority
- DE
- Germany
- Prior art keywords
- electron beam
- tension system
- contactless testing
- grid tension
- switchable grid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/302—Contactless testing
- G01R31/305—Contactless testing using electron beams
- G01R31/306—Contactless testing using electron beams of printed or hybrid circuits
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/925,764 US4843330A (en) | 1986-10-30 | 1986-10-30 | Electron beam contactless testing system with grid bias switching |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3783864D1 true DE3783864D1 (de) | 1993-03-11 |
DE3783864T2 DE3783864T2 (de) | 1993-08-19 |
Family
ID=25452199
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8787113821T Expired - Fee Related DE3783864T2 (de) | 1986-10-30 | 1987-09-22 | System mit umschaltbarer gittervorspannung zum kontaktlosen testen mit einem elektronenstrahl. |
Country Status (4)
Country | Link |
---|---|
US (1) | US4843330A (de) |
EP (1) | EP0266535B1 (de) |
JP (1) | JPH0729639Y2 (de) |
DE (1) | DE3783864T2 (de) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH065691B2 (ja) * | 1987-09-26 | 1994-01-19 | 株式会社東芝 | 半導体素子の試験方法および試験装置 |
US4963823A (en) * | 1988-06-27 | 1990-10-16 | Siemens Aktiengesellschaft | Electron beam measuring instrument |
US4943769A (en) * | 1989-03-21 | 1990-07-24 | International Business Machines Corporation | Apparatus and method for opens/shorts testing of capacitively coupled networks in substrates using electron beams |
EP0402499A1 (de) * | 1989-06-13 | 1990-12-19 | Siemens Aktiengesellschaft | Verfahren zur Prüfung einer Leiterplatte mit einer Teilchensonde |
EP0405672A1 (de) * | 1989-06-30 | 1991-01-02 | Koninklijke Philips Electronics N.V. | Verfahren zur Messung einer Spannungsverteilung auf ein Leitermuster |
US5017863A (en) * | 1989-10-20 | 1991-05-21 | Digital Equipment Corporation | Electro-emissive laser stimulated test |
US5210487A (en) * | 1991-06-04 | 1993-05-11 | Schlumberger Technologies Inc. | Double-gated integrating scheme for electron beam tester |
US5258706A (en) * | 1991-10-16 | 1993-11-02 | Siemens Aktiengesellschaft | Method for the recognition of testing errors in the test of microwirings |
US5404110A (en) * | 1993-03-25 | 1995-04-04 | International Business Machines Corporation | System using induced current for contactless testing of wiring networks |
US5614833A (en) * | 1994-10-25 | 1997-03-25 | International Business Machines Corporation | Objective lens with large field deflection system and homogeneous large area secondary electron extraction field |
US5587664A (en) * | 1995-07-12 | 1996-12-24 | Exsight Ltd. | Laser-induced metallic plasma for non-contact inspection |
US5844416A (en) * | 1995-11-02 | 1998-12-01 | Sandia Corporation | Ion-beam apparatus and method for analyzing and controlling integrated circuits |
US6172363B1 (en) * | 1996-03-05 | 2001-01-09 | Hitachi, Ltd. | Method and apparatus for inspecting integrated circuit pattern |
US5781017A (en) * | 1996-04-26 | 1998-07-14 | Sandia Corporation | Capacitive charge generation apparatus and method for testing circuits |
US6163159A (en) * | 1997-06-02 | 2000-12-19 | Advantest Corp | Charged particle beam test system |
US6504393B1 (en) | 1997-07-15 | 2003-01-07 | Applied Materials, Inc. | Methods and apparatus for testing semiconductor and integrated circuit structures |
US5973323A (en) | 1997-11-05 | 1999-10-26 | Kla-Tencor Corporation | Apparatus and method for secondary electron emission microscope |
US6232787B1 (en) * | 1999-01-08 | 2001-05-15 | Schlumberger Technologies, Inc. | Microstructure defect detection |
US6344750B1 (en) * | 1999-01-08 | 2002-02-05 | Schlumberger Technologies, Inc. | Voltage contrast method for semiconductor inspection using low voltage particle beam |
US6252412B1 (en) | 1999-01-08 | 2001-06-26 | Schlumberger Technologies, Inc. | Method of detecting defects in patterned substrates |
US6586733B1 (en) | 1999-05-25 | 2003-07-01 | Kla-Tencor | Apparatus and methods for secondary electron emission microscope with dual beam |
EP1183707B1 (de) * | 1999-05-25 | 2009-10-07 | KLA-Tencor Corporation | Gerät und verfahren zur sekundärelektronen-mikroskopie mittels doppelten strahles |
DE69900869T2 (de) * | 1999-07-29 | 2002-07-18 | Advantest Corp | Verfahren und Vorrichtung zur Prüfung eines elektronischen Bauteils |
US6359451B1 (en) | 2000-02-11 | 2002-03-19 | Image Graphics Incorporated | System for contactless testing of printed circuit boards |
AU3354401A (en) | 2000-02-14 | 2001-08-20 | Eco 3 Max Inc. | Process for removing volatile organic compounds from an air stream and apparatustherefor |
US7038224B2 (en) * | 2002-07-30 | 2006-05-02 | Applied Materials, Israel, Ltd. | Contact opening metrology |
US7528614B2 (en) * | 2004-12-22 | 2009-05-05 | Applied Materials, Inc. | Apparatus and method for voltage contrast analysis of a wafer using a tilted pre-charging beam |
US6812462B1 (en) | 2003-02-21 | 2004-11-02 | Kla-Tencor Technologies Corporation | Dual electron beam instrument for multi-perspective |
JP5016799B2 (ja) * | 2005-08-05 | 2012-09-05 | 株式会社日立製作所 | 荷電粒子ビームを用いた検査装置 |
US7560939B1 (en) * | 2006-02-17 | 2009-07-14 | Kla-Tencor Technologies Corporation | Electrical defect detection using pre-charge and sense scanning with prescribed delays |
US8748815B2 (en) * | 2006-08-31 | 2014-06-10 | Hermes Microvision, Inc. | Method and system for detecting or reviewing open contacts on a semiconductor device |
US20080296496A1 (en) * | 2007-05-30 | 2008-12-04 | Hermes Microvision, Inc. (Taiwan) | Method and apparatus of wafer surface potential regulation |
GB0713276D0 (en) * | 2007-07-09 | 2007-08-15 | Medical Res Council | Transmission electron microscope |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL134392C (de) * | 1965-09-21 | |||
US3448377A (en) * | 1967-10-12 | 1969-06-03 | Atomic Energy Commission | Method utilizing an electron beam for nondestructively measuring the dielectric properties of a sample |
US3448776A (en) * | 1967-10-26 | 1969-06-10 | Marshall John D | Picker stick |
JPS4823385A (de) * | 1971-07-28 | 1973-03-26 | ||
US3984683A (en) * | 1975-05-27 | 1976-10-05 | Rca Corporation | Apparatus and method for analyzing biological cells for malignancy |
DE2814049A1 (de) * | 1978-03-31 | 1979-10-18 | Siemens Ag | Verfahren zur beruehrungslosen messung des potentialverlaufs in einem elektronischen bauelement und anordnung zur durchfuehrung des verfahrens |
DE2902495A1 (de) * | 1979-01-23 | 1980-07-31 | Siemens Ag | Einrichtung zur beruehrungslosen potentialmessung |
US4417203A (en) * | 1981-05-26 | 1983-11-22 | International Business Machines Corporation | System for contactless electrical property testing of multi-layer ceramics |
US4415851A (en) * | 1981-05-26 | 1983-11-15 | International Business Machines Corporation | System for contactless testing of multi-layer ceramics |
DE3235461A1 (de) * | 1982-09-24 | 1984-03-29 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur kontaktlosen pruefung eines objekts, insbesondere von mikroverdrahtungen, mit einer korpuskularstrahl-sonde |
DE3334494A1 (de) * | 1983-09-23 | 1985-04-11 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum messen niederfrequenter signalverlaeufe innerhalb integrierter schaltungen mit der elektronensonde |
US4596929A (en) * | 1983-11-21 | 1986-06-24 | Nanometrics Incorporated | Three-stage secondary emission electron detection in electron microscopes |
DE3576213D1 (de) * | 1984-09-18 | 1990-04-05 | Integrated Circuit Testing | Gegenfeld-spektrometer fuer die elektronenstrahl-messtechnik. |
US4695794A (en) * | 1985-05-31 | 1987-09-22 | Santa Barbara Research Center | Voltage calibration in E-beam probe using optical flooding |
-
1986
- 1986-10-30 US US07/925,764 patent/US4843330A/en not_active Expired - Fee Related
-
1987
- 1987-07-09 JP JP1987104590U patent/JPH0729639Y2/ja not_active Expired - Lifetime
- 1987-09-22 DE DE8787113821T patent/DE3783864T2/de not_active Expired - Fee Related
- 1987-09-22 EP EP87113821A patent/EP0266535B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE3783864T2 (de) | 1993-08-19 |
US4843330A (en) | 1989-06-27 |
JPH0729639Y2 (ja) | 1995-07-05 |
JPS6371537U (de) | 1988-05-13 |
EP0266535A1 (de) | 1988-05-11 |
EP0266535B1 (de) | 1993-01-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |