JPS6370826A - Optical device for semiconductor laser beam printer - Google Patents

Optical device for semiconductor laser beam printer

Info

Publication number
JPS6370826A
JPS6370826A JP21519886A JP21519886A JPS6370826A JP S6370826 A JPS6370826 A JP S6370826A JP 21519886 A JP21519886 A JP 21519886A JP 21519886 A JP21519886 A JP 21519886A JP S6370826 A JPS6370826 A JP S6370826A
Authority
JP
Japan
Prior art keywords
semiconductor laser
laser
laser beam
pickup lens
aperture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21519886A
Other languages
Japanese (ja)
Inventor
Kazuya Oike
大池 一弥
Nobuyuki Hashimoto
信幸 橋本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP21519886A priority Critical patent/JPS6370826A/en
Publication of JPS6370826A publication Critical patent/JPS6370826A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
  • Laser Beam Printer (AREA)

Abstract

PURPOSE:To correct the ellipticity of a light emission pattern of an inexpensive and simple semiconductor laser, by selecting suitably a light emission radiation characteris tic of a semiconductor laser and an angular aperture of a pickup lens. CONSTITUTION:In an optical device of a semiconductor laser 17 of a laser beam printer which uses the semiconductor laser 17, with respect to a half-power full angle of a laser bean 18 of a component for expanding in the horizontal direction on a P-N joint surface of the semiconductor laser, and a half-power full angle of the laser beam 18 of a component for expanding in the vertical direction in the same way, the semicon ductor laser 17 having a light emission radiation characteristic by which the respective maximum values of the half-power full angles are <=16 deg. and 36 deg. when an optical output of the semiconductor laser 17 is 3mW is used as a light source, and by using a pickup lens 19 whose angular aperture NA=<=0.20, light of the semiconductor laser is picked up. In such a case, in the laser beam 18 emitted from the semiconductor laser 17, a laser cutting part 33 of a part caught by a fitting frame 35 of a laser beam 31 is cut by the fitting frame 35 for limiting an aperture of the pickup lens 19, and with respect to a laser light 34 passing through the aperture, the ellipticity is corrected.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は近年ノンインパクトプリンタとして注目されて
いる半導体レーザビームプリンタの光学系に関するもの
である。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical system of a semiconductor laser beam printer, which has recently attracted attention as a non-impact printer.

〔従来の技術〕[Conventional technology]

従来の半導体レーザビームプリンタの光学系においては
、シリンドリカルレンズやアナモフィックプリズムペア
等によって、半導体レーザ特有の楕円形状に出射するレ
ーザビームの楕円率補正を行なっていた。シリンドリカ
ルレンズ5.7を用いて楕円率補正を行なった半導体レ
ーザビームプリンタの従来の光学系の光路図を第4図に
示す。
In the optical system of a conventional semiconductor laser beam printer, the ellipticity of a laser beam emitted in an elliptical shape unique to a semiconductor laser is corrected using a cylindrical lens, an anamorphic prism pair, or the like. FIG. 4 shows an optical path diagram of a conventional optical system of a semiconductor laser beam printer in which ellipticity correction is performed using a cylindrical lens 5.7.

1は半導体レーザ、6はビックアンプレンズ、5.7は
シリンドリカルレンズ、9は収束レンズ、11はY方向
ビームを示し、16はX方向ビームを示す。16は光軸
、15は最小ビームスポットである。
1 is a semiconductor laser, 6 is a big amplifier lens, 5.7 is a cylindrical lens, 9 is a converging lens, 11 is a Y direction beam, and 16 is an X direction beam. 16 is the optical axis, and 15 is the minimum beam spot.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながらシリンドリカルレンズやアナモフインクプ
リズムペアを用いて楕円率補正するには、光学系の構成
及び設計が複雑圧なりコストがかがる等の問題があった
However, correcting the ellipticity using a cylindrical lens or a pair of anamorphic prisms poses problems such as complicated configuration and design of the optical system and increased cost.

本発明の目的は上記問題点を解消し安価で簡単な半導体
レーザビームの楕円率補正をするプリンタの光学装置を
提供することである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an optical device for a printer that solves the above-mentioned problems and performs an inexpensive and simple ellipticity correction of a semiconductor laser beam.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題を解決するため本発明においては、半導体レー
ザから放射されるレーザビームの強度が最大強度の1/
2の大きさになる方位を該半導体レーザの発光点を中心
とした拡がり角で表わした半値全角のうち、前記半導体
レーザのPN接合面に水平方向に拡がる成分のレーザビ
ームの半値全角と、同じく垂直方向に拡がる成分のレー
ザビームの半値全角とを光出力が3mW時に前記半値全
角の各々の最大値が16°と、36°以下の発光放射特
性を有する半導体レーザな光源とし、開口角NA=0.
20以下のピックアップレンズを使用して該半導体レー
ザの光をピックアップした。
In order to solve the above problem, in the present invention, the intensity of the laser beam emitted from the semiconductor laser is reduced to 1/1 of the maximum intensity.
The full width at half maximum of the component of the laser beam that spreads in the horizontal direction to the PN junction surface of the semiconductor laser is the same as the full width at half maximum in which the direction in which the direction becomes 2 is expressed as the divergence angle centered on the light emitting point of the semiconductor laser. The maximum value of each half-maximum full-width is 16° when the optical output is 3 mW, and the light source is a semiconductor laser having an emission characteristic of 36° or less, and the aperture angle NA= 0.
The light from the semiconductor laser was picked up using a pickup lens of 20 or less.

〔実施例〕〔Example〕

第1図は本発明における光学系の1実施例である。 FIG. 1 shows one embodiment of the optical system according to the present invention.

半導体レーザ17から出射したレーザビーム18はN 
A 0.20以下のピックアップレンズ19でピックア
ップされ収束レンズ21で収束されて、該収束レンズ2
1の焦点位置Po近辺に最小ビームスポット29を作成
する。
The laser beam 18 emitted from the semiconductor laser 17 is N
It is picked up by the pickup lens 19 of A 0.20 or less, is converged by the convergent lens 21, and the convergent lens 2
A minimum beam spot 29 is created near the focal position Po of 1.

尚、26はY方向ビーム、25はX方向ビーム、27は
光軸、65は後述する取付枠である。
Note that 26 is a Y-direction beam, 25 is an X-direction beam, 27 is an optical axis, and 65 is a mounting frame to be described later.

光軸27上、半導体レーザ17の位置から該ピックアッ
プレンズ19を見たときの様子を第2図(示す。第2図
において該半導体レーザ17から出射されるレーザビー
ム18のうちピックアップレンズ19の開口を制限する
取付枠65によりレーザビーム31の取付枠35Kかが
る部分のレーザカット部36がカットされ、開口を通過
するレーザ光64は楕円率補正される。
FIG. 2 (shows) how the pickup lens 19 is viewed from the position of the semiconductor laser 17 on the optical axis 27. In FIG. The laser cut portion 36 of the portion of the laser beam 31 that overlaps the mounting frame 35K is cut by the mounting frame 65 that limits the laser beam 31, and the ellipticity of the laser beam 64 passing through the opening is corrected.

第3図は本発明の他の実施例である。第3図においてN
Ao、20より開口数の大きいピックアップレンズ41
を用いた場合は、収束レンズ45の間にアパーチャー4
3を挿入することによっても楕円率補正を行うことがで
きる。尚、67は半導体レーザ、69はレーザビーム、
47はY方向ビーム、49はX方向ビーム、51は光軸
、53は最小ビームスポットである。
FIG. 3 shows another embodiment of the invention. In Figure 3, N
Pickup lens 41 with a larger numerical aperture than Ao, 20
When using the aperture 4 between the converging lenses 45
The ellipticity correction can also be performed by inserting 3. In addition, 67 is a semiconductor laser, 69 is a laser beam,
47 is a Y direction beam, 49 is an X direction beam, 51 is an optical axis, and 53 is a minimum beam spot.

半導体レーザ17としてレーザビームの放射特性が光出
力3mW時にピーク強度の1/2の点の幅(半値全角)
で、半導体レーザのPN接合面に水平方向に拡がる成分
のレーザビームの半値全角の最大値=16deg、PN
接合面に垂直方向に拡がる成分のレーザビームの半値全
角の最大値=36 degのものを用いた。ピックアッ
プレンズ19はNA約0.17、焦点距離約10mmで
、ピックアップレンズ19通過後のレーザビームの直径
は約3.2 n+mとなっている。
As the semiconductor laser 17, the radiation characteristic of the laser beam is the width at 1/2 of the peak intensity when the optical output is 3 mW (full width at half maximum)
Then, the maximum full width at half maximum of the laser beam component that spreads horizontally on the PN junction surface of the semiconductor laser = 16 deg, PN
A laser beam with a maximum full width at half maximum of a component that spreads in the direction perpendicular to the bonding surface was used. The pickup lens 19 has an NA of about 0.17 and a focal length of about 10 mm, and the diameter of the laser beam after passing through the pickup lens 19 is about 3.2 nm+m.

収束レンズ21は有効径10mmφ、焦点距離約300
 mrnである。この時の収束レンズ21の焦点位置2
0点でのX方向、Y方向におけるレーザビームスポット
プロファイルを第5図に示す。第5図(Alは焦点位置
Po点におけるX方向ビーム径、第5図(BlはY方向
ビーム径を示す。
The converging lens 21 has an effective diameter of 10 mmφ and a focal length of approximately 300 mm.
It is mrn. Focal position 2 of the converging lens 21 at this time
FIG. 5 shows the laser beam spot profile in the X direction and Y direction at the 0 point. FIG. 5 (Al indicates the beam diameter in the X direction at the focal point Po, FIG. 5 (Bl indicates the beam diameter in the Y direction).

第5図において横軸は20(μm/d i v )、縦
軸は相対光強度を示している。第5図かられかるように
本実施例の場合、収束レンズ21の焦点位置におけるレ
ーザビーム径のY方向、X方向においてビームスポット
プロファイルはほとんど変化がなくレーザビーム18の
楕円率が補正されていることがわかる。
In FIG. 5, the horizontal axis represents 20 (μm/d iv), and the vertical axis represents relative light intensity. As can be seen from FIG. 5, in the case of this embodiment, the beam spot profile hardly changes in the Y direction and the X direction of the laser beam diameter at the focal position of the converging lens 21, and the ellipticity of the laser beam 18 is corrected. I understand that.

〔発明の効果〕〔Effect of the invention〕

以上の説明で明らかなように本発明によれば、半導体レ
ーザの発光放射特性とピックアップレンズの開口角を適
当に選ぶ事により、安価で簡単な半導体レーザの発光パ
ターンの楕円率補正ができる。
As is clear from the above description, according to the present invention, by appropriately selecting the emission characteristics of the semiconductor laser and the aperture angle of the pickup lens, it is possible to correct the ellipticity of the emission pattern of the semiconductor laser easily and at low cost.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明における一実施例を示す光学系の光路図
、第2図は第1図におけるピックアップレンズと取付枠
によるレーザビームのビーム形状の補正を示す模式図、
第3図は本発明における他の実施例を示す光学系の光路
図、第4図は従来のシリンドリカルレンズを用いて楕円
率補正した従時の焦点面でのビームスポットプロファイ
ルである。 17.67・・・・・・半導体レーザ、19.41・・
・・・・ピックアップレンズ、21.45・・・・・・
収束レンズ、 26.47・・・・・・Y方向ビーム、25.49・・
・・・・X方向ビーム、29.53・・・・・・最小ビ
ームスポット、27.51・・・・・・光軸、 18.31.69・・・・・・レーザビーム、66・・
・・・・レーザカット部、 34・・・・・・開口を通過するレーザ光、35・・・
・・・取付枠、 46・・・・・・アパーチャー。 第1図 第2図 x7ff角ビーム場(μm〕 Y7yルPご一ム怪〔I肩J
FIG. 1 is an optical path diagram of an optical system showing an embodiment of the present invention, and FIG. 2 is a schematic diagram showing correction of the beam shape of a laser beam by the pickup lens and mounting frame in FIG. 1.
FIG. 3 is an optical path diagram of an optical system showing another embodiment of the present invention, and FIG. 4 is a beam spot profile at a conventional focal plane corrected for ellipticity using a conventional cylindrical lens. 17.67... Semiconductor laser, 19.41...
...Pickup lens, 21.45...
Converging lens, 26.47...Y direction beam, 25.49...
...X direction beam, 29.53 ... Minimum beam spot, 27.51 ... Optical axis, 18.31.69 ... Laser beam, 66 ...
...Laser cutting part, 34...Laser light passing through the aperture, 35...
...Mounting frame, 46...Aperture. Figure 1 Figure 2 x7ff angle beam field (μm)

Claims (2)

【特許請求の範囲】[Claims] (1)半導体レーザの半導体レーザを用いたレーザビー
ムプリンターの半導体レーザの光学装置において、前記
半導体レーザのPN接合面に水平方向に拡がる成分のレ
ーザビームの半値全角と、同じく垂直方向に拡がる成分
のレーザビームの半値全角とを前記半導体レーザの光出
力が3mW時に前記半値全角の各々の最大値が16°と
36°以下の発光放射特性を有する半導体レーザを光源
とし、開口角NA=0.20以下のピックアップレンズ
を使用して前記半導体レーザの光をピックアップする事
を特徴とした半導体レーザビームプリンタの光学装置。
(1) In a semiconductor laser optical device of a laser beam printer using a semiconductor laser, the full width at half maximum of the laser beam of the component that spreads horizontally on the PN junction surface of the semiconductor laser and the full width of the laser beam of the component that also spreads in the vertical direction. When the optical output of the semiconductor laser is 3 mW, the maximum value of the full width at half maximum of the laser beam is 16°, and the light source is a semiconductor laser having emission characteristics of 36° or less, and the aperture angle NA = 0.20. An optical device for a semiconductor laser beam printer, characterized in that the light from the semiconductor laser is picked up using the following pickup lens.
(2)ピックアップレンズは開口角をNA=0.20以
上のピックアップレンズとアパーチャーとによりピック
アップの開口角をNA=0.20以下としたことを特徴
とする特許請求の範囲第1項記載の半導体レーザビーム
プリンタの光学装置。
(2) The semiconductor according to claim 1, characterized in that the pickup lens has an aperture angle of NA=0.20 or less by a pickup lens with an aperture angle of NA=0.20 or more and an aperture. Optical device of laser beam printer.
JP21519886A 1986-09-12 1986-09-12 Optical device for semiconductor laser beam printer Pending JPS6370826A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21519886A JPS6370826A (en) 1986-09-12 1986-09-12 Optical device for semiconductor laser beam printer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21519886A JPS6370826A (en) 1986-09-12 1986-09-12 Optical device for semiconductor laser beam printer

Publications (1)

Publication Number Publication Date
JPS6370826A true JPS6370826A (en) 1988-03-31

Family

ID=16668311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21519886A Pending JPS6370826A (en) 1986-09-12 1986-09-12 Optical device for semiconductor laser beam printer

Country Status (1)

Country Link
JP (1) JPS6370826A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005221585A (en) * 2004-02-03 2005-08-18 Toshiba Corp Multibeam optical scanner and image forming apparatus
CN110967842A (en) * 2019-11-11 2020-04-07 长春理工大学 Local hollow light beam free opening and closing system based on optical tweezers technology

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005221585A (en) * 2004-02-03 2005-08-18 Toshiba Corp Multibeam optical scanner and image forming apparatus
CN110967842A (en) * 2019-11-11 2020-04-07 长春理工大学 Local hollow light beam free opening and closing system based on optical tweezers technology

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