JPS62186219A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS62186219A
JPS62186219A JP61029786A JP2978686A JPS62186219A JP S62186219 A JPS62186219 A JP S62186219A JP 61029786 A JP61029786 A JP 61029786A JP 2978686 A JP2978686 A JP 2978686A JP S62186219 A JPS62186219 A JP S62186219A
Authority
JP
Japan
Prior art keywords
semiconductor laser
chip
laser device
approximately circular
shaping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP61029786A
Other languages
Japanese (ja)
Inventor
Shuzo Mori
森 修造
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP61029786A priority Critical patent/JPS62186219A/en
Publication of JPS62186219A publication Critical patent/JPS62186219A/en
Pending legal-status Critical Current

Links

Landscapes

  • Optical Head (AREA)

Abstract

PURPOSE:To reduce the size of an optical system in an optical disk device and to reduce the number of parts of an optical system for shaping beams by arranging a cylindrical lens in the front of a chip to be a light source correspondingly to an elliptic projection beam as an approximately circular beam to radiate the approximately circular beam. CONSTITUTION:The chip 12 is a light source for a semiconductor laser device 11 and the recessed cylindrical lens 13 has function for shaping an elliptic projection beam projected from the chip 12 as an approximately circular beam in addition to the function of a cover glass. In the semiconductor laser device 11, a small elliptic light beam obtained immediately after being radiated from the chip 12 can be shaped as an approximately circular beam.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は、光デイスク装置の光学系の簡素化に関するも
のであり、特に半導体レーザー装置に関するものである
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to the simplification of the optical system of an optical disk device, and particularly to a semiconductor laser device.

従来の技術 一股に光デイスク装置の光学系は、半導体レーザーの楕
円放射光を該レーザーから放射された後に略円形にビー
ム整形し、ディスク記録面上にφ1μm以下に集光する
ことが基本である。第2図に従来の楕円放射光を略円形
にビーム整形する光学系の構成を示す、1は半導体レー
ザー装置であり、光源であるチップ(図示せず)とチッ
プの保護と同時に、コリメート・レンズ2へ入射するま
での収差補正を目的とした一光学部品の機能をもつカバ
ーガラス(図示せず)を有している。この半導体レーザ
ー装置1からの楕円放射光はコリメート・レンズ2にお
いて楕円平行光に集光された後、第2図(a)において
は凹形シリンドリカル・レンズ3、凸形シリンドリカル
・レンズ4により、第2図(b)においては整形プリズ
ム5により略同平行光にビーム整形される方式となって
いる。以下、略同平行光にビーム整形された光は対物レ
ンズ(図示せず)によってディスク記録面(図示せず)
上に集光される。なお、第2図(b)においては整形プ
リズム5は1個であるが2flXlの組合せで行なう場
合もある。
Conventional technology The optical system of an optical disk device basically shapes the elliptical radiation of a semiconductor laser into a substantially circular beam after being emitted from the laser, and focuses the beam onto the disk recording surface to a diameter of 1 μm or less. be. Figure 2 shows the configuration of a conventional optical system that shapes an elliptical synchrotron beam into a substantially circular shape. 1 is a semiconductor laser device, which protects a chip (not shown) as a light source and a collimating lens. It has a cover glass (not shown) which functions as an optical component for the purpose of correcting aberrations until the light enters the light beam. The elliptically emitted light from the semiconductor laser device 1 is condensed into elliptically parallel light by a collimating lens 2, and then, as shown in FIG. In FIG. 2(b), the beam is shaped into substantially parallel beams by a shaping prism 5. Thereafter, the beam is shaped into substantially parallel light beams and is passed through an objective lens (not shown) to the disk recording surface (not shown).
The light is focused on the top. Although the number of shaping prisms 5 is one in FIG. 2(b), a combination of 2flX1 may be used.

発明が解決しようとする問題点 従来の整形ビーム方式の光学系においては、■ 楕円放
射光から略同平行光にする段階では既に光束はφ5〜6
μmとなっていて、対応するレンズまたはプリズムもこ
れをカバーするだけの大きなものとなり、結局は完成後
の光学ブロックも大きくなる傾向がある、■ シリンド
リカル・レンズで整形する場合は、凹、凸の組合せが必
要であり、レンズ・ホルダーを含め部品点数が増加する
傾向がある、■ プリズムで整形する場合、ブルースタ
ー角を利用することが多いため、入射角の関係で光学ブ
ロック全体が異形構造になりやすい、という問題があっ
た。
Problems to be Solved by the Invention In the conventional shaped beam type optical system, ■ At the stage of converting elliptical radiation into substantially parallel beams, the luminous flux already has a diameter of φ5 to 6.
μm, and the corresponding lens or prism is large enough to cover this, and the optical block after completion tends to be large.■ When shaping with a cylindrical lens, concave and convex combination is required, and the number of parts including the lens holder tends to increase. ■ When shaping with a prism, the Brewster angle is often used, so the entire optical block has an irregular structure due to the angle of incidence. The problem was that it was easy to do so.

本発明は以上の問題点を解決するもので、光デイスク装
置における光学系を小型化でき、さらには整形ビーム用
光学系の部品点数を削減することができる半導体レーザ
ー装置を提供することを目的とするものである。
The present invention solves the above problems, and aims to provide a semiconductor laser device that can miniaturize the optical system in an optical disk device and further reduce the number of parts of the shaped beam optical system. It is something to do.

問題点を解決するための手段 上記の問題点を解決するため、本発明は半導体レーザー
装置において、光源としてのチップの前面に、前記チッ
プから出射する楕円出射光のX軸およびY軸に対応して
シリンドリカル・レンズを設置し、前記楕円出射光を略
円形に整形して、放射するようにしたものである。
Means for Solving the Problems In order to solve the above-mentioned problems, the present invention provides a semiconductor laser device in which a semiconductor laser device is provided with a structure in which the front surface of a chip serving as a light source corresponds to the X-axis and Y-axis of the elliptical emitted light emitted from the chip. A cylindrical lens is installed to shape the elliptical emitted light into a substantially circular shape and radiate it.

作用 上記の構成により、光源であるチップからの楕円出射光
を半導体レーザー装置内で光束径の小さい時点で略円形
にビーム整形することができ、従来のビーム整形を行な
うための光学部品を不要とすることができる。
Effect With the above configuration, the elliptical emitted light from the chip that is the light source can be shaped into a substantially circular beam within the semiconductor laser device when the beam diameter is small, eliminating the need for conventional optical components for beam shaping. can do.

実施例 本発明の一実施例を図面に基づいて説明する。Example An embodiment of the present invention will be described based on the drawings.

第1図(a)に本発明による半導体レーザー装置の断面
、第1図(b)に前記半導体レーザー装置の出射面に取
り付けられるシリンドリカル・レンズを示す。11は半
導体レーザー装置、12は半導体レーザー装置11の光
源であるチップである。13はガバーガラスの機能に加
え、前記チップ12からの楕円出射光を略円形に整形す
る機能を付加した凹形シリンドリカル・レンズであり、
従来のカバーガラスに置き換えるものである。
FIG. 1(a) shows a cross section of a semiconductor laser device according to the present invention, and FIG. 1(b) shows a cylindrical lens attached to the emission surface of the semiconductor laser device. 11 is a semiconductor laser device, and 12 is a chip that is a light source of the semiconductor laser device 11. 13 is a concave cylindrical lens which, in addition to the function of a cover glass, has an additional function of shaping the elliptical output light from the chip 12 into a substantially circular shape;
It replaces the conventional cover glass.

この半導体レーザー装置11によると、装置内でチップ
12からの発光出射直後の光束の小さい時点で、楕円出
射光を略円形にビーム整形をすることができる。
According to this semiconductor laser device 11, the elliptical emitted light can be beam-shaped into a substantially circular shape at a point in time when the luminous flux is small immediately after the light emission from the chip 12 within the device.

発明の効果 以上、本発明によれば、半導体レーザー装置内にてビー
ム整形を行なうため、従来のビーム整形用光学部品が不
要となり光学ブロック全体を小型化と低コスト化ができ
、この工業上の価値は大きい。
In addition to the effects of the invention, according to the present invention, since beam shaping is performed within the semiconductor laser device, conventional optical components for beam shaping are not required, and the entire optical block can be downsized and cost reduced. Great value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図(a)は本発明の一実施例を示す半導体レーザー
装置の断面図、第1図(b)はシリンドリカル・レンズ
の斜視図、第2図(a)および(b)はそれぞれ楕円放
射光を略円形にビーム整形する光学系の構成図である。 11・・・半導体レーザー、12・・・チップ、13・
・・凹形シリンドリカル・レンズ 代理人   森  本  義  弧 部1図 1f−一一↑禅イ1ζし−“リ−11 12−ナツツ0
FIG. 1(a) is a cross-sectional view of a semiconductor laser device showing an embodiment of the present invention, FIG. 1(b) is a perspective view of a cylindrical lens, and FIGS. 2(a) and (b) are elliptical radiation FIG. 2 is a configuration diagram of an optical system that beam-shapes light into a substantially circular shape. 11... Semiconductor laser, 12... Chip, 13.
・・Concave cylindrical lens representative Yoshi Morimoto Arc part 1 Figure 1f-11 ↑ Zeni 1ζshi-"Lee-11 12-Natsutsu 0

Claims (1)

【特許請求の範囲】[Claims] 1、光源としてのチップの前面に、前記チップから出射
する楕円出射光のX軸およびY軸に対応してシリンドリ
カル・レンズを設置し、前記楕円出射光を略円形に整形
して、放射するようにした半導体レーザー装置。
1. A cylindrical lens is installed on the front surface of the chip as a light source, corresponding to the X-axis and Y-axis of the elliptical output light emitted from the chip, so that the elliptical output light is shaped into a substantially circular shape and then radiated. semiconductor laser device.
JP61029786A 1986-02-12 1986-02-12 Semiconductor laser device Pending JPS62186219A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61029786A JPS62186219A (en) 1986-02-12 1986-02-12 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61029786A JPS62186219A (en) 1986-02-12 1986-02-12 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS62186219A true JPS62186219A (en) 1987-08-14

Family

ID=12285682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61029786A Pending JPS62186219A (en) 1986-02-12 1986-02-12 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS62186219A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430627A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Air filter
JPS6430628A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
JPS6430629A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
JPS6430630A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
CN102879908A (en) * 2012-10-24 2013-01-16 北京凯普林光电科技有限公司 Compensation light source system and dynamic image detecting device for train operation fault

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6430627A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Air filter
JPS6430628A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
JPS6430629A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
JPS6430630A (en) * 1987-07-24 1989-02-01 Matsushita Electric Ind Co Ltd Burner
CN102879908A (en) * 2012-10-24 2013-01-16 北京凯普林光电科技有限公司 Compensation light source system and dynamic image detecting device for train operation fault
CN102879908B (en) * 2012-10-24 2015-01-21 北京凯普林光电科技有限公司 Compensation light source system and dynamic image detecting device for train operation fault

Similar Documents

Publication Publication Date Title
US4206494A (en) High throughput illuminator
JPH0412039B2 (en)
JPS62186219A (en) Semiconductor laser device
JPS5857385U (en) Laser irradiation device
JPH0718983B2 (en) Optical collimator device
JP2002116501A (en) Illuminator
JPH06150701A (en) Projection light source device
JPS6265012A (en) Light emitting element
JPS58114338A (en) Optical pickup
JPH0334387A (en) Semiconductor laser device
JP2748341B2 (en) Optical unit and light irradiation device to which the optical unit is joined
JPH0241607Y2 (en)
JPS63269130A (en) Parallel light forming device
JPS63269131A (en) Parallel light forming device
JPS62132385A (en) Photocoupler
JPH0780673A (en) Laser beam machine
JP2889596B2 (en) LD light source device
JPH04174422A (en) Light source
JPH0324784A (en) Semiconductor laser device
JPS62196620A (en) Laser module
JPH077234A (en) Dye laser oscillation equipment
JPH10172325A (en) Illumination optical device
JPS6450460U (en)
JP2000089159A (en) Light source device
JPH0425815A (en) Beam shaping device