JPS6370566A - Photoelectric conversion element - Google Patents
Photoelectric conversion elementInfo
- Publication number
- JPS6370566A JPS6370566A JP61216243A JP21624386A JPS6370566A JP S6370566 A JPS6370566 A JP S6370566A JP 61216243 A JP61216243 A JP 61216243A JP 21624386 A JP21624386 A JP 21624386A JP S6370566 A JPS6370566 A JP S6370566A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- conversion element
- film
- photoconductive film
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 34
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 239000011159 matrix material Substances 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000004043 responsiveness Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910003322 NiCu Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、充電変換素子に関し、更に詳しくは、光導Ｎ
膜を用い且つ応答性を改善した光電変換素子に関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a charging conversion element, and more particularly to a light guide N
The present invention relates to a photoelectric conversion element that uses a film and has improved responsiveness.
従来技術
光電変換素子のうちＣｄＳ、ＣｄＳｅ等の光導電膜を用
いたものは、十分高い信号出力が得られるため実時間型
の読み取り方式を用いることが出来、マトリクス駆動が
可能で、スイッチ素子数を低減できるなどの利点を持っ
ている。Among conventional photoelectric conversion elements, those using photoconductive films such as CdS and CdSe can obtain sufficiently high signal output, so real-time reading methods can be used, matrix driving is possible, and the number of switch elements can be reduced. It has the advantage of being able to reduce
その一般的構成は、第７図および第８図に示すようであ
る。Its general configuration is shown in FIGS. 7 and 8.
第７図に示す光電変換素子１１は、絶縁性基板１２上に
、ＣｄＳやＣｄＳｅの如き材料の光導電１臭１４を形成
し、その光導電膜１４の上面に、対の電極１５．１６を
形成した構造である。In the photoelectric conversion element 11 shown in FIG. 7, a photoconductive film 14 made of a material such as CdS or CdSe is formed on an insulating substrate 12, and a pair of electrodes 15 and 16 are formed on the upper surface of the photoconductive film 14. This is the structure formed.
また、第８図に示す光電変換素子２１は、絶縁性基板２
２上に、電極２５を形成し、その電極２５の上に光導電
ｌｌ！２４を形成し、更にその光導電膜２４の上に透明
電極２６を形成した構造である。Furthermore, the photoelectric conversion element 21 shown in FIG.
2, an electrode 25 is formed on the electrode 25, and a photoconductive layer is formed on the electrode 25. 24 is formed, and a transparent electrode 26 is further formed on the photoconductive film 24.
これらの光１！変換素子１１又は２１において、光導電
！ｌｌ！１４又は２４の上面に光を照射すると、電極１
５．１６の間の抵抗値又は電極２５．２６の間の抵抗値
が変化する。These lights 1! In the conversion element 11 or 21, photoconductive! ll! When the upper surface of electrode 14 or 24 is irradiated with light, electrode 1
The resistance between 5.16 and 25.26 or the resistance between electrodes 25.26 changes.
そこで、光強度を電気信号に変換することができる。Therefore, the light intensity can be converted into an electrical signal.
従来技術の問題点
従来の光導電膜を用いた光電変換素子では、その返答性
を数ｕｓｅｃ以下とするのは困難であり、高速読み取り
を行う必要のある用途には使用できないという問題点が
あった。Problems with the Prior Art It is difficult for photoelectric conversion elements using conventional photoconductive films to have a response time of several seconds or less, and there is a problem in that they cannot be used in applications that require high-speed reading. Ta.
発明の目的
本発明の目的とするところは、光導電膜を用い且つ応答
性を改善した光電変換素子を提供することにある。OBJECTS OF THE INVENTION It is an object of the present invention to provide a photoelectric conversion element that uses a photoconductive film and has improved responsiveness.
発明の構成
本発明の光電変換素子は、光導電膜の上面に第１１！極
と第２電掻とを形成し、その光導電膜の上面に光を照射
し、そのときの両電極間の抵抗値の変化により光強度を
電気信号に変換する光電変換素子において、光導電膜の
下面に第３の電極を形成し、その第３電極と第１電極と
を接続したことを構成上の特徴とするものである。Structure of the Invention The photoelectric conversion element of the present invention has an 11th! In a photoelectric conversion element that forms a pole and a second electrode, irradiates the upper surface of the photoconductive film with light, and converts the light intensity into an electrical signal by changing the resistance value between both electrodes at that time, the photoconductive The structure is characterized in that a third electrode is formed on the lower surface of the membrane, and the third electrode and the first electrode are connected.
本発明において、実施態様として、第３の電極はマトリ
ックス配線のブロック毎に形成し、第１のＮ極と電気的
に接続している。In the present invention, as an embodiment, the third electrode is formed for each block of matrix wiring and is electrically connected to the first N-pole.
また、第３の電極は、第１の電極と第２の電極のギャッ
プ中央付近にまで設け、光導電膜にバイアス電圧を有効
に働かせるように構成している。Further, the third electrode is provided near the center of the gap between the first electrode and the second electrode, so as to effectively apply a bias voltage to the photoconductive film.
また、第１の電極と第３の電極とは光導電膜の上下では
お互いに重ならないように構成している。Further, the first electrode and the third electrode are configured so as not to overlap each other above and below the photoconductive film.
作用
第１電極と第２電極との間には直流電圧が印加され、光
強度による両電極間の抵抗値の変化が光電流の変化とし
て検出される。A DC voltage is applied between the working first electrode and the second electrode, and a change in resistance between the two electrodes due to light intensity is detected as a change in photocurrent.
ところが、第１電極と接続された第３電極が存在するた
め、第２１１１極と第３電極の間にも直流電圧が印加さ
れたことになる。However, since there is a third electrode connected to the first electrode, a DC voltage is also applied between the 2111th pole and the third electrode.
すなわち、第１電極と第２電極の間の直流電圧によって
光導電膜の横方向に電界を生じ、且つ、第２電極と第３
電極の間の直流電圧によって光導電膜の膜厚方向にも電
界を生じる。That is, an electric field is generated in the lateral direction of the photoconductive film by a DC voltage between the first electrode and the second electrode, and an electric field is generated between the second electrode and the third electrode.
An electric field is also generated in the thickness direction of the photoconductive film due to the DC voltage between the electrodes.
そうすると、両電界によって光導ｍｆｌのバンド構造が
変化し、光照射によって生成されるキャリアの緩和過程
が変化する。そして、これにより応答性が改善される。Then, the band structure of the light guide mfl changes due to both electric fields, and the relaxation process of carriers generated by light irradiation changes. This also improves responsiveness.
実施例
以下、図に示す実施例に基づいて本発明を更に詳しく説
明する・ここに第１図＋ａｌ、 （ｂｌは本発明の一実
施例の光１！変換棄子を示すもので、（ａｌは［ｂｌに
おけるｘ−ｘ’断面図、山）は平面図である。第２図は
第１図に示す光電変換素子とその読み出し回路を示す回
路図である。第３図Ｆａｌ、 （ｂｌは第３電極の形成
工程を示す断面図及び平面図、第４図（８）。EXAMPLES Hereinafter, the present invention will be explained in more detail based on the examples shown in the figures. Herein, FIG. is a cross-sectional view taken along line x-x' in bl, (mountain) is a plan view. FIG. 2 is a circuit diagram showing the photoelectric conversion element shown in FIG. 1 and its readout circuit. FIG. 4(8) is a cross-sectional view and a plan view showing the formation process of the third electrode.
（ｂ）は光導電膜の形成工程を示す断面図及び平面図、
第５図ｔａｇ、 （ｂｌは第１電極及び第２電極の形成
工程を示す断面図及び平面図、第６図ｆａｔ、 （ｂｌ
は透明絶縁膜および読み出し電極の形成工程を示す断面
図及び平面図である。なお、図に示す実施例により本発
明が限定されるものではない。(b) is a cross-sectional view and a plan view showing the process of forming a photoconductive film,
Figure 5 tag, (bl is a cross-sectional view and plan view showing the formation process of the first electrode and second electrode, Figure 6 fat, (bl
2A and 2B are a cross-sectional view and a plan view showing a process of forming a transparent insulating film and a readout electrode. Note that the present invention is not limited to the embodiments shown in the figures.
第１図に示す光ｍ変換素子１において、絶縁性基板２の
上面に第３の電極３が形成され、その上面に光導電膜４
が形成され、その光導電膜４の上面に第１電極５及び第
２電極６ａ、６ｂ＋ ・・・が形成され、更にそれらの
上面に透明絶縁膜７が形成され、その透明絶縁膜７の上
面に読み出し電極Ａ、Ｂ、・・・を形成して構成されて
いる。In the light m conversion element 1 shown in FIG. 1, a third electrode 3 is formed on the upper surface of an insulating substrate 2, and a photoconductive film 4 is formed on the upper surface.
is formed, a first electrode 5 and second electrodes 6a, 6b+, etc. are formed on the upper surface of the photoconductive film 4, a transparent insulating film 7 is further formed on the upper surface thereof, and the upper surface of the transparent insulating film 7 is formed. The reading electrodes A, B, . . . are formed on the electrodes.
ここで注忘すべきことは、本発明に係る光電変換素子１
の特徴として、第３Ｎ極３が形成されていることである
。What should be noted here is that the photoelectric conversion element 1 according to the present invention
The feature is that a third north pole 3 is formed.
その第３電極３は、第１電極５と第２１！！極６゜＋６
に＋ ・・・の間部分に対応する光導電膜４の下面に形
成されており、両電極５．６＆、６に、・・・とは光導
電１臭４の膜厚方向において重ならないように両電極５
．６＆、６＆、・・・のギャップ中央付近に位置して配
置され、第１電極５とは電気的に接続されて光導電膜４
にバイアス電圧が有効に働くように構成されている。こ
れは暗Ｗ流を抑止するためである。The third electrode 3 is connected to the first electrode 5 and the 21st! ! pole 6°+6
It is formed on the lower surface of the photoconductive film 4 corresponding to the part between + and . Both electrodes 5
．． 6&, 6&, . . . and is electrically connected to the first electrode 5 to form a photoconductive film 4
The structure is such that the bias voltage works effectively. This is to suppress the dark W flow.
第２図はこの光電変換素子１とその読み出し回路を示す
電気回路図である。FIG. 2 is an electrical circuit diagram showing this photoelectric conversion element 1 and its readout circuit.
すなわち、第１電極５．５’、・・・（および第３電極
３．３’、・・・）は、スイッチＳ、、Ｓ、、・・・に
よって選択されたものが電源Ｅからの直流電圧を印加さ
れ、選択されなかったものが接地される。That is, the first electrodes 5.5', . . . (and the third electrodes 3.3', . Voltage is applied, and those not selected are grounded.
一方、読み出し電極Ａ、Ｂ、・・・は、スイッチＳ□、
Ｓ、、・・・によって選択されたものが負倚抵抗Ｒに接
続され、他は負荷抵抗Ｒから切り離される。On the other hand, the readout electrodes A, B, . . . are connected to the switches S□,
Those selected by S, . . . are connected to the negative resistance R, and the others are disconnected from the load resistance R.
そこで例えば第２図に示すようにスイッチＳＩとスイッ
チＳ、とをオンとすれば、先導？ｔｌｌ！４の一つの画
素に対応する部分の抵抗値ｒ、の変化が検出され、出力
電圧■。とじて得られる。なお、この画素は、第１図（
ｂｌにおいて、第１電極５と第２電極６．の間部分であ
る。So, for example, if switch SI and switch S are turned on as shown in Fig. 2, will it lead? tll! A change in the resistance value r of a portion corresponding to one pixel of 4 is detected, and the output voltage . Obtained by binding. Note that this pixel is shown in Figure 1 (
In bl, the first electrode 5 and the second electrode 6. This is the part between.
同様にして、スイッチＳｌ、Ｓ２＋ ・・・とスイッチ
Ｓ、、Ｓ、、・・・とのマトリクス駆動によって、各画
素を順次選択的に読み出すことが出来る。Similarly, each pixel can be sequentially and selectively read out by driving the switches Sl, S2+, . . . and switches S, , S, . . . in a matrix.
したがって、この光電変換素子１は、−次元のイメージ
センサである。Therefore, this photoelectric conversion element 1 is a -dimensional image sensor.
次に、第３′ＦｇＪ〜第６図を参照し、上記光Ｎ変換素
子１の製作例について説明する。Next, an example of manufacturing the optical N conversion element 1 will be described with reference to 3'FgJ to FIG. 6.
１作男
（１）第３図＋ａ＋、 （ｂｌに示すように、ガラス基
板２ （コーニング社製＃７０５９）上に、ＥＢ薄着法
により厚さ約３０００人のＴ、膜を形成し、通常のフォ
トリソグラフィ法を用いてバターニングし、第３の電極
３を形成した。この第３の電極３は第２の共通電極とし
てマトリックス配線のブロック毎に形成（第１図（ｂｌ
参照）し、後述するように第１の共通電極としての第１
の電極５と光導ｍｌ膜４の上下では重ならないようにバ
ターニングしている。1. (1) As shown in Figure 3 + a + (bl), a film with a thickness of about 3,000 thick was formed on the glass substrate 2 (Corning #7059) by the EB thin deposition method, and then A third electrode 3 was formed by patterning using a photolithography method.This third electrode 3 was formed for each block of matrix wiring as a second common electrode (see FIG.
) and the first common electrode as the first common electrode as described later.
The upper and lower portions of the electrode 5 and the light guide ML film 4 are patterned so that they do not overlap.
（２）粒子径が０．２μｍ〜２μｍ（例えば平均粒径約
１μｍ）のＣｄＳｅ微結晶粉に、活性化処理（ＣｄＣ１
＊４．４モル％ドープ、Ｎ２雰囲気８００℃処理）を施
し、次にＣｄＣ１＊４．５モル％と粘度調整のためのエ
チレングリコールとを通量添加し、サンドミル中で２０
時間混合し、光導電材ペーストを作成した。(2) CdSe microcrystalline powder with a particle size of 0.2 μm to 2 μm (for example, an average particle size of about 1 μm) is subjected to activation treatment (CdC1
*4.4 mol% dope, N2 atmosphere 800°C treatment), then CdC1*4.5 mol% and ethylene glycol for viscosity adjustment were added through the flow, and the mixture was heated in a sand mill for 20
A photoconductive material paste was prepared by mixing for a period of time.
（３） 第４図（ａｌ、 （ｂｌに示すように、上記
光導電材ペーストを、第３電極３および基板２上に、ス
クリーン印刷により塗布し、次いでＮ２ ＋０２雰囲気
中で１００℃×１時間熱処理を施し、更に３００℃×１
時間熱処理を施し、更に５００℃×３０分間熱処理を施
し、微結晶粒を焼結、成長させて光導電膜４を形成した
。焼成後の光導？！膜４の膜厚は、約６．５μｍで、粗
度約０．７μｍであった。(3) As shown in Figure 4 (al, (bl), the photoconductive material paste was applied onto the third electrode 3 and the substrate 2 by screen printing, and then heat-treated at 100°C for 1 hour in an N2+02 atmosphere. and further heated to 300℃ x 1
A heat treatment was performed for a time, and then a heat treatment was performed at 500° C. for 30 minutes to sinter and grow the microcrystalline grains, thereby forming a photoconductive film 4. Light guide after firing? ! The film thickness of the film 4 was about 6.5 μm, and the roughness was about 0.7 μm.
（４）基板２．第３電極３及び光導電膜４の上に、厚さ
約３μｍのレジスト層をコーティングし、モノクロロベ
ンゼン中に２５℃×３０分間浸漬し、Ｎ、中で７０℃×
３０分間熱処理し、ＵＶ光にて露光し、第１の共通電極
としての第１電極５および第２電極６１，６ｂ、・・・
用のレジストパターンを形成した。(4) Substrate 2. A resist layer with a thickness of approximately 3 μm was coated on the third electrode 3 and the photoconductive film 4, and immersed in monochlorobenzene at 25°C for 30 minutes.
Heat treated for 30 minutes and exposed to UV light, the first electrode 5 as the first common electrode and the second electrodes 61, 6b, . . .
A resist pattern was formed.
＋５１ＥＢ蒸着法により厚さ約８０００人のＴ ｉ膜を
形成し、アセトン中でレジストを剥離し、第５図（ａｇ
、 （ｂｌに示すように、第１電極５及び第２電極６□
、６ｂ、・・・を形成した。なお、これら第１電極５お
よび第２電極６１．６ｉ、、・・・と前記第３Ｎ極３と
は、光導電膜４の上下方向において重ならないようにバ
ターニングすると共に第１の電極５と第３の電極３とは
光導電ＰＪ４の存在していない基板上で電気的に接続さ
れるように構成している。A Ti film with a thickness of about 8,000 thick was formed by +51EB vapor deposition method, and the resist was peeled off in acetone.
, (as shown in bl, the first electrode 5 and the second electrode 6□
, 6b, . . . were formed. The first electrode 5 and the second electrode 61.6i, . . . and the third N-pole 3 are patterned so that they do not overlap in the vertical direction of the photoconductive film 4, and It is configured to be electrically connected to the third electrode 3 on the substrate where the photoconductive PJ 4 is not present.
（６）第６図ｔａ＋に示すように、厚さ約５μｍのポリ
イミド膜を透明絶縁１！１７としてコーティングし、次
いで第２Ｍ極６１．６Ｉ、、・・・と読み出し電極Ａ、
Ｂ、・・・とを接続するためのコンタクトホール７□、
・・・をエツチングにより形成し、次いで第６Ｈａ１山
）に示すように、上部配線形成のためＤＣスパッタ法に
よりＡ１を厚さ約２０００人、ＴＩを厚さ約３０００人
、ＮｉＣｕを厚さ約１００００人に着膜し、通常のフォ
トリソグラフィ法でバターニングし、読み出し電ｌｉＡ
、・・・を形成した。(6) As shown in FIG. 6 ta+, a polyimide film with a thickness of approximately 5 μm is coated as a transparent insulation 1!17, and then the second M poles 61.6I, . . . , the readout electrodes A,
Contact hole 7□ for connecting B,...
... was formed by etching, and then as shown in the 6th Ha1 peak), A1 was formed to a thickness of approximately 2,000 mm, TI to a thickness of approximately 3,000 mm, and NiCu to a thickness of approximately 10,000 mm by DC sputtering to form the upper wiring. The film is deposited on a person, patterned using normal photolithography, and readout electrodes
,... were formed.
（７）以上により線密度８ドツト／ ｍ 、画素数１７
２８の密着形−次元イメージセンサとして光電変換素子
１を製作した。(7) As a result of the above, the linear density is 8 dots/m and the number of pixels is 17.
A photoelectric conversion element 1 was manufactured as a contact type 28-dimensional image sensor.
（８） 上記光電変換素子ｌに波長６９５ｎｍ、強度
約６４μＷ／−の光を照射したところ、第１１極５およ
び第３電極３に印加する電圧１２Ｖにおいて、約３０μ
Ａの出力電流を得ることができ、その応答速度は２ｍ５
ｅｃ以下であった。これは第３電極３を有しない従来の
光電変換素子に比べて約２倍以上応答速度が速くなった
。また、第３電極３をＴｉにて形成したことにより耐熱
性、耐蝕性に擾れていた。(8) When the photoelectric conversion element 1 was irradiated with light having a wavelength of 695 nm and an intensity of approximately 64 μW/-, the voltage of 12 V applied to the eleventh pole 5 and the third electrode 3 was approximately 30 μ.
An output current of A can be obtained, and the response speed is 2m5.
It was below ec. This is about twice the response speed compared to a conventional photoelectric conversion element that does not have the third electrode 3. Furthermore, since the third electrode 3 was formed of Ti, the heat resistance and corrosion resistance were poor.
発明の効果
本発明によれば、光導？！！模の上面に第１電極と第２
電極とを形成し、その光導電膜の上面に光を照射し、そ
のときの両電極間の抵抗値の変化により光強度を電気信
号に変換する光電変換素子において、光導１！膜の下面
に第３の電極を形成し、その第３電極と第１電極とを接
続したことを特徴とする光電変換素子が提供され、これ
により光導電膜を用い且つ高速応答性を持つ充電変換素
子が得られる。この光電変換素子は、大面積にわたる均
一な光導電膜を形成することができるので、密着型イメ
ージ素子として特に有用である。Effects of the Invention According to the present invention, light guiding? ! ! The first electrode and the second electrode are on the top surface of the pattern.
In a photoelectric conversion element that forms an electrode, irradiates the upper surface of the photoconductive film with light, and converts the light intensity into an electrical signal by changing the resistance value between both electrodes at that time, the light guide 1! A photoelectric conversion element is provided, characterized in that a third electrode is formed on the lower surface of the film, and the third electrode and the first electrode are connected. A conversion element is obtained. Since this photoelectric conversion element can form a uniform photoconductive film over a large area, it is particularly useful as a contact type image element.
第１図ｆａｔ、 （ｂｌは本発明の一実施例の光電変換
素子を示すもので、（ａｌは山）におけるｘ−ｘ’断面
図、 Ｑ）ｌは平面図である。第２図は第１図に示す光
電変換素子とその読み出し回路を示す回路図である。
第３１１（ａｌ、 （ｂｌは第３電極の形成工程を示す
断面図及び平面図、第４図ｔａｒ、 Ｑ）ｌは光導Ｗｉ
膜の形成工程を示す断面図及び平面図、第５図ｆａｔ、
（ｂｌは第１電極及び第２１１極の形成工程を示す断
面図及び平面図、第６図（ａｌ、 （ｂｌは透明絶縁膜
および読み出し電極の形成工程を示す断面図及び平面図
である。第７図は従来の充電変換素子の一例を示す模式
的断面図、第８図は従来の光電変換素子の他の一例を示
す模式的断面図である。
（符号の説明）
１・・・光電変換素子 ２・・・絶縁性基板３・・・
第３電極 ４・・・光導１！膜５・・・第１電極
６１．６＋、、〜・・・第２電極
７・・・透明絶縁膜
Ａ、 Ｂ、〜・・・読み出し電極。FIG. 1 fat, (bl shows a photoelectric conversion element according to an embodiment of the present invention, (al is a mountain) xx' cross-sectional view, and Q)l is a plan view. FIG. 2 is a circuit diagram showing the photoelectric conversion element shown in FIG. 1 and its readout circuit. 311(al) (bl is a cross-sectional view and a plan view showing the formation process of the third electrode, FIG. 4 tar, Q)l is the light guide Wi
A cross-sectional view and a plan view showing the film formation process, FIG.
(bl is a cross-sectional view and a plan view showing the formation process of the first electrode and the 211th electrode, FIG. Fig. 7 is a schematic cross-sectional view showing an example of a conventional charging conversion element, and Fig. 8 is a schematic cross-sectional view showing another example of a conventional photoelectric conversion element. (Explanation of symbols) 1... Photoelectric conversion Element 2... Insulating substrate 3...
Third electrode 4...Light guide 1! Membrane 5...First electrode 61.6+, . . . Second electrode 7...Transparent insulating film A, B, . . . Readout electrode.
Claims (1)
その光導電膜の上面に光を照射し、そのときの両電極間
の抵抗値の変化により光強度を電気信号に変換する光電
変換素子において、 光導電膜の下面に第３の電極を形成し、そ の第３電極と第１電極とを接続したことを特徴とする光
電変換素子。[Claims] 1. Forming a first electrode and a second electrode on the upper surface of the photoconductive film,
In a photoelectric conversion element that irradiates the upper surface of the photoconductive film with light and converts the light intensity into an electrical signal by changing the resistance value between both electrodes at that time, a third electrode is formed on the lower surface of the photoconductive film. , a photoelectric conversion element characterized in that the third electrode and the first electrode are connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61216243A JPS6370566A (en) | 1986-09-12 | 1986-09-12 | Photoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61216243A JPS6370566A (en) | 1986-09-12 | 1986-09-12 | Photoelectric conversion element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6370566A true JPS6370566A (en) | 1988-03-30 |
Family
ID=16685516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61216243A Pending JPS6370566A (en) | 1986-09-12 | 1986-09-12 | Photoelectric conversion element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6370566A (en) |
-
1986
- 1986-09-12 JP JP61216243A patent/JPS6370566A/en active Pending
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