JPS6370402A - Resistance trimming - Google Patents
Resistance trimmingInfo
- Publication number
- JPS6370402A JPS6370402A JP61214644A JP21464486A JPS6370402A JP S6370402 A JPS6370402 A JP S6370402A JP 61214644 A JP61214644 A JP 61214644A JP 21464486 A JP21464486 A JP 21464486A JP S6370402 A JPS6370402 A JP S6370402A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- resistance value
- overvoltage
- trimming
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009966 trimming Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 claims description 25
- 238000010438 heat treatment Methods 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005488 sandblasting Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】 〈産業上の利用分野〉 本発明は、抵抗器の抵抗値トリミング方法に関する。[Detailed description of the invention] <Industrial application field> The present invention relates to a method for trimming the resistance value of a resistor.
〈従来の技術〉
一般に、チップ抵抗器などの厚膜抵抗器Ｉこおいては、
所定の抵抗値を得るためにトリミングを行なっている。<Prior art> Generally, in thick film resistors such as chip resistors,
Trimming is performed to obtain a predetermined resistance value.
このトリミングの方法としては、レーザ光線によって抵
抗膜を切削するレーザトリミング法、研摩粉を高速噴射
して抵抗膜を切削するサンドブラスト法などがある。Examples of this trimming method include a laser trimming method in which the resistive film is cut with a laser beam, and a sandblasting method in which the resistive film is cut by jetting abrasive powder at high speed.
〈発明が解決しようとする問題点〉
ところが、レーザトリミング法では、局所的に加熱され
るために、不要な抵抗値シフトが生じるという欠点があ
り、一方、サンドブラスト法では、トリミング部分が荒
れてノイズや安定性が悪くなるという欠点があり、さら
に、レーザトリミングは製造途中の工程で行なわれろた
めに、その後の工程で熱か加わることにより抵抗１直う
く変動するという欠点がある。<Problems to be Solved by the Invention> However, the laser trimming method has the disadvantage that unnecessary resistance value shifts occur due to local heating, while the sandblasting method has the disadvantage that the trimmed area becomes rough and generates noise. Furthermore, since laser trimming is performed during the manufacturing process, there is a disadvantage that the resistance will fluctuate by 1 when heat is applied in a subsequent process.
このような欠点を解消するトリミング方法として、最終
工程において、完成品である抵抗器に対してパルス状の
過電圧を印加するパルス［・リミング法がある。As a trimming method to eliminate such drawbacks, there is a pulse trimming method in which a pulse-like overvoltage is applied to the finished resistor in the final step.
ところが、このパルストリミング方法は、コンデンサか
らの放電により所要電圧値のパルス波を生成するため、
電圧値レベルが異なる毎に容量の異なるコンデンサを用
意しなければならず、そのため、この方法を実竜する装
置の回路構咬がｉ夏准化、大型化するばかりでなく、調
整できる抵抗値範囲が限定され、広い抵抗値範囲の調整
には向かないという電点がある。However, this pulse trimming method generates a pulse wave of the required voltage value by discharging from the capacitor, so
Capacitors with different capacitances must be prepared for each different voltage level, which not only makes the circuit structure of the device that implements this method more compact and larger, but also increases the range of resistance values that can be adjusted. There is an electric point that is not suitable for adjusting a wide resistance value range.
本発明は、］二述の点に鑑みてなされたものであって、
簡単な回路構成の装置により調整できる抵抗値範囲が広
く、しかも、高精度の抵抗器を製造可能な抵抗値トリミ
ング方法を提供することを目的とする。The present invention has been made in view of the following points,
It is an object of the present invention to provide a resistance value trimming method that can adjust a wide range of resistance values using a device with a simple circuit configuration and can manufacture highly accurate resistors.
〈問題点を解決するための手段〉
本発明では、上述の目的を達成するために、抵抗器に過
電圧を、該抵抗器の抵抗体が自己発熱によって加熱され
る程度の所定の期間に亘って印加するようにしている。<Means for Solving the Problems> In the present invention, in order to achieve the above-mentioned object, an overvoltage is applied to a resistor for a predetermined period of time such that the resistor of the resistor is heated by self-heating. I am trying to apply it.
く作用〉
上記構成によれば、過電圧および自己発熱の作用によっ
て抵抗体の抵抗値が下方調整されることになる。この場
合、過電圧は、抵抗器の完成品に印加すればよい。Effects> According to the above configuration, the resistance value of the resistor is adjusted downward due to the effects of overvoltage and self-heating. In this case, the overvoltage may be applied to the finished resistor.
〈実施例〉
以下、図面によって本発明の実施例について詳細に説明
する。第１図は本発明方法の実施に供する回路図である
。この実施例では、チップ抵抗器に適用して説明する。<Example> Hereinafter, an example of the present invention will be described in detail with reference to the drawings. FIG. 1 is a circuit diagram for implementing the method of the present invention. This embodiment will be explained by applying it to a chip resistor.
このチップ抵抗器１は、たとえば、アルミナ等絶縁性９
基板に、厚膜印刷などの手法によって酸化ルテニウム等
の抵抗膜およびＡｇ−Ｐ（Ｉ等の電極が形成され、さら
に、保護膜としてのガラスコートが被覆されて成る。This chip resistor 1 is made of insulating material 9 such as alumina, for example.
A resistive film such as ruthenium oxide and an electrode such as Ag-P(I) are formed on the substrate by a technique such as thick film printing, and the substrate is further coated with a glass coat as a protective film.
本発明の抵抗値トリミング方法は、保護膜が形成された
後の最終工程で次のようにして行なわれる。すなわち、
このチップ抵抗器ｌは、スイッチ２を介して交流電源３
に接続される。このスイッチ２のオン時間は、タイマ４
により設定される。The resistance value trimming method of the present invention is carried out as follows in the final step after the protective film is formed. That is,
This chip resistor l is connected to an AC power supply 3 via a switch 2.
connected to. The on time of switch 2 is determined by timer 4.
Set by.
電源電圧は、チップ抵抗器１の定格電圧よりも大きい過
電圧、この実施例では、２００〜４００ｖであり、周波
数は、商用周波数である。The power supply voltage is an overvoltage greater than the rated voltage of the chip resistor 1, in this example, 200 to 400V, and the frequency is a commercial frequency.
この過電圧をチップ抵抗器ｌの抵抗体が自己発熱によっ
て加熱される程度の所定の期間、例えば、１〜５秒間に
亘ってタイマ４により前記スイッチ２をオンして印加す
る。この過電圧の値および印加時間などのトリミングの
条件は、予め行ｆＪっ几実験データに基づいて決定され
る。This overvoltage is applied by turning on the switch 2 by the timer 4 for a predetermined period of time long enough to heat the resistor of the chip resistor 1 by self-heating, for example, 1 to 5 seconds. Trimming conditions such as the value and application time of this overvoltage are determined in advance based on experimental data.
第２図：よ、本発明方法による印加電圧と抵抗値の変化
率との関係を示す特性図である。同図において、ライン
Ａ Ｉは抵抗値１００にΩの２．ＯＸｌ。FIG. 2 is a characteristic diagram showing the relationship between applied voltage and rate of change in resistance value according to the method of the present invention. In the figure, the line A I has a resistance value of 100 and a resistance of 2.0Ω. OXl.
２５ｍｍ形状の角チツプ抵抗器、ラインＡ２は抵抗値Ｉ
Ｎ・１Ωの２．ＯＸｌ、２５ｉｎ形状の角チツプ抵抗器
、ラインＢ１は抵抗値１００にΩの３．２Ｘｌ。25mm square chip resistor, line A2 has resistance value I
2 of N・1Ω. OXl, 25 inch square chip resistor, line B1 is 3.2Xl with resistance value 100Ω.
［３ｖｎ形状の角チツプ抵抗器、ラインＢ２は抵抗値Ｉ
ＭΩの３．２Ｘ１．６ｍｍ形状の角チツプ抵抗器の特性
をそれぞれ示しており、各場合の印加時間はそれぞれ５
秒間である。この第２図に示されるように、５秒間に亘
って過電圧を印加することにより、各チップ抵抗器の抵
抗値を０〜７％の範囲内で低下させることが可能である
。[3vn-shaped square chip resistor, line B2 has resistance value I
The characteristics of a MΩ 3.2 x 1.6 mm square chip resistor are shown, and the application time in each case is 5.
seconds. As shown in FIG. 2, by applying overvoltage for 5 seconds, it is possible to reduce the resistance value of each chip resistor within a range of 0 to 7%.
このように抵抗値が低下するのは、過電圧および自己発
熱によってチップ抵抗器Ｉの抵抗体を構成する分子配列
が変化して電流が流れやすくなるためと考えられる。The reason why the resistance value decreases in this way is considered to be that the overvoltage and self-heating change the molecular arrangement of the resistor of the chip resistor I, making it easier for current to flow.
また、第２図に結果を示した実験と同様のチップ抵抗器
について、過電圧の印加時間を種々変更して、各印加時
間毎に、印加電圧／抵抗値変化率の関係を求めたところ
、印加時間が１〜ｌＯ秒の範囲では、各抵抗器の示す印
加電圧／変化率ラインは、第２図の各ラインＡ Ｉ 、
Ａ ２ 、Ｂ ｔ 、Ｂ ２と同様のカーブを描き、印
加時間が長くなるのに伴ない、下方へ（すなわち、マ、
ｒナス変化本か増える方向に）僅かずつ移行することを
示した。これは、印加時間が長くなるにつれて、自己発
熱量が増えるためと考えられる。In addition, for a chip resistor similar to the experiment whose results are shown in Figure 2, we varied the overvoltage application time and determined the relationship between applied voltage and resistance change rate for each application time. When the time is in the range of 1 to 10 seconds, the applied voltage/rate of change line shown by each resistor is the line A I in FIG. 2,
A curve similar to A 2 , B t , and B 2 is drawn, and as the application time increases, the curve decreases downward (i.e., M,
It was shown that there was a slight shift (in the direction of an increase in the number of eggplant changes). This is considered to be because the amount of self-heating increases as the application time increases.
二のことつ＼ら、過電圧の電圧値を設定するとともに、
その印加時間を調整することによって、抵抗値の下方調
整を微量的に行なえることがわかる。Second, while setting the overvoltage voltage value,
It can be seen that by adjusting the application time, the resistance value can be slightly adjusted downward.
このように過電圧および自己発熱作用の両者によって抵
抗値を調整することにより、単にパルス状の過電圧を印
加するパルストリミング法に比べて広い抵抗値範囲で調
整できることになる。しかも、保護膜を被覆し１こ後の
最終工程でトリミングを行なうことができるので、レー
ザトリミング法のようにトリミング後の工程で抵抗値が
変動するといったことかなく、さらに、レーザトリミン
グ法やサンドブラスト法のように抵抗体を傷つけること
なくトリミングが可能でうり、高精度の抵抗器を歩留ま
りよく製造することが可能である。By adjusting the resistance value using both the overvoltage and the self-heating effect in this way, the resistance value can be adjusted over a wider range than the pulse trimming method that simply applies a pulsed overvoltage. Moreover, trimming can be performed in the final step after coating with a protective film, so there is no change in resistance value in the process after trimming as in the laser trimming method. Unlike conventional methods, trimming can be performed without damaging the resistor, and high-precision resistors can be manufactured at a high yield.
上述の実施例では、交流の過電圧を印加する場合につい
て説明したけれども、本発明は交流に限るものではなく
、直流の過電圧を所定の期間に亘って印加するようにし
てもよい。Although the above-mentioned embodiment describes the case where AC overvoltage is applied, the present invention is not limited to AC overvoltage, and DC overvoltage may be applied over a predetermined period.
〈発明の効果〉
以上のように本発明によれば、抵抗器に過電圧を、該抵
抗器の抵抗体が自己発熱によって加熱される程度の所定
の期間に亘って印加するようにしたので、過電圧および
加熱の両者によって抵抗値が調整されることになり、こ
れによって、従来例のパルストリミング法に比べて簡単
な回路構成の装置により広い範囲での抵抗値の調整が可
能となり、さらに、レーザトリミング法やサンドブラス
ト法のように抵抗体を傷つけずに完成品に対して調整を
行なえるので、高精度の抵抗器を歩留りよく製造するこ
とが可能となる。<Effects of the Invention> As described above, according to the present invention, an overvoltage is applied to a resistor over a predetermined period of time to the extent that the resistor of the resistor is heated by self-heating. The resistance value is adjusted by both heating and heating, and this makes it possible to adjust the resistance value over a wider range using a device with a simpler circuit configuration than the conventional pulse trimming method. Since adjustments can be made to the finished product without damaging the resistor, unlike the sandblasting method and sandblasting method, it is possible to manufacture highly accurate resistors at a high yield.
第１図は本発明方法の実施に供する回路図、第２図は本
発明方法による印加電圧と抵抗値の変化率との関係を示
す特性図である。
１・・千ツブ抵抗器、２・・・スイッチ、３・交流１源
。FIG. 1 is a circuit diagram for implementing the method of the present invention, and FIG. 2 is a characteristic diagram showing the relationship between applied voltage and rate of change in resistance value according to the method of the present invention. 1. 1,000-tube resistor, 2. Switch, 3. AC 1 source.
Claims (1)
によって加熱される程度の所定の期間に亘って印加する
ことを特徴とする抵抗値トリミング方法。(1) A resistance value trimming method characterized in that an overvoltage is applied to a resistor over a predetermined period of time to the extent that the resistor of the resistor is heated by self-heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61214644A JPS6370402A (en) | 1986-09-11 | 1986-09-11 | Resistance trimming |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61214644A JPS6370402A (en) | 1986-09-11 | 1986-09-11 | Resistance trimming |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6370402A true JPS6370402A (en) | 1988-03-30 |
Family
ID=16659168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61214644A Pending JPS6370402A (en) | 1986-09-11 | 1986-09-11 | Resistance trimming |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6370402A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5780708A (en) * | 1980-11-07 | 1982-05-20 | Nissan Motor | Method of producing thick film resistor |
| JPS59207687A (en) * | 1983-05-11 | 1984-11-24 | 松下電器産業株式会社 | Method of producing printed film resistor |
-
1986
- 1986-09-11 JP JP61214644A patent/JPS6370402A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5780708A (en) * | 1980-11-07 | 1982-05-20 | Nissan Motor | Method of producing thick film resistor |
| JPS59207687A (en) * | 1983-05-11 | 1984-11-24 | 松下電器産業株式会社 | Method of producing printed film resistor |
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