JPS636729U - - Google Patents
Info
- Publication number
- JPS636729U JPS636729U JP10130186U JP10130186U JPS636729U JP S636729 U JPS636729 U JP S636729U JP 10130186 U JP10130186 U JP 10130186U JP 10130186 U JP10130186 U JP 10130186U JP S636729 U JPS636729 U JP S636729U
- Authority
- JP
- Japan
- Prior art keywords
- etching
- cooler
- semiconductor wafers
- piping
- vapor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
Landscapes
- Weting (AREA)
Description
第１図は本考案のエツチング装置の断面図、第
２図は従来のエツチング装置の断面図、第３図は
従来の装置に蓋をした場合の断面図である。
１……ウエハー、２……キヤリア、３……エツ
チング層、４……エツチング液、４ａ……結露エ
ツチング液、５……ヒーター、６……蒸気、７…
…蓋、８……冷却器、８ａ……螺旋状配管、９…
…冷却水、１０……配管。
FIG. 1 is a sectional view of the etching apparatus of the present invention, FIG. 2 is a sectional view of a conventional etching apparatus, and FIG. 3 is a sectional view of the conventional apparatus with a lid. DESCRIPTION OF SYMBOLS 1... Wafer, 2... Carrier, 3... Etching layer, 4... Etching liquid, 4a... Dew condensation etching liquid, 5... Heater, 6... Steam, 7...
...Lid, 8...Cooler, 8a...Spiral piping, 9...
...Cooling water, 10...Piping.
Claims (1)
てエツチングを行う半導体ウエハー製造用エツチ
ング装置において、エツチング液を入れたエツチ
ング槽に蓋を被せ、このエツチング槽の上方に設
けられた冷却器にエツチング液の蒸気を配管によ
り導き、冷却器内で蒸気を結露させて配管に戻し
、エツチング槽と冷却器との間で気液循環を行わ
せることを特徴とする半導体ウエハー製造用エツ
チング装置。 In an etching device for manufacturing semiconductor wafers that immerses semiconductor wafers in an etching solution and performs etching by heating, the etching tank containing the etching solution is covered with a lid, and the vapor of the etching solution is placed in a cooler installed above the etching tank. An etching apparatus for manufacturing semiconductor wafers, characterized in that vapor is guided through piping, condensed in a cooler and returned to the piping, and gas-liquid circulation is performed between an etching bath and a cooler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10130186U JPS636729U (en) | 1986-06-30 | 1986-06-30 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10130186U JPS636729U (en) | 1986-06-30 | 1986-06-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS636729U true JPS636729U (en) | 1988-01-18 |
Family
ID=30971919
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10130186U Pending JPS636729U (en) | 1986-06-30 | 1986-06-30 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS636729U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007500431A (en) * | 2003-07-24 | 2007-01-11 | ケムトレース プレシジョン クリーニング， インコーポレイテッド | Ultrasonic assisted etching using corrosive liquid |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213133A (en) * | 1983-05-18 | 1984-12-03 | Hitachi Ltd | Etching method for semiconductor wafer |
| JPS6010733A (en) * | 1983-06-30 | 1985-01-19 | Nec Corp | Manufacturing device for semiconductor wafer |
| JPS61101032A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Treating equipment |
-
1986
- 1986-06-30 JP JP10130186U patent/JPS636729U/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59213133A (en) * | 1983-05-18 | 1984-12-03 | Hitachi Ltd | Etching method for semiconductor wafer |
| JPS6010733A (en) * | 1983-06-30 | 1985-01-19 | Nec Corp | Manufacturing device for semiconductor wafer |
| JPS61101032A (en) * | 1984-10-24 | 1986-05-19 | Hitachi Ltd | Treating equipment |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007500431A (en) * | 2003-07-24 | 2007-01-11 | ケムトレース プレシジョン クリーニング， インコーポレイテッド | Ultrasonic assisted etching using corrosive liquid |
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