JPS6366785A - Magnetic bubble memory device - Google Patents

Abstract

PURPOSE:To easily produce the title device without increasing process by spa tially inverting a magnetic bubble detector with an 0 phase block and a mag netic bubble detector with a pi phase block by 180 deg. and disposing. CONSTITUTION:In the bubble detector D0 of the O phase block BR0 of the magnetic bubble detector D and the bubble detector Dpi of the pi phase block BRpi, a bubble enlargement pattern S and a bubble detecting magnetic resistance element parts d0, dpi, are oppositely formed in the figures (a), (b) and the mag netic bubbles are respectively transferred in the opposite direction as shown in a transfer direction P. In such a case, the magnetic resistance element parts d0, dpi are constituted of a thick film and integrally formed as a part of a bubble transfer path on the same layer as a bubble enlargement pattern S. Thereby, the time when the magnetic bubble passes through the magnetic resis tance element parts d0, dpi differs by 180 deg. in the rotating magnetic field and a timing (phase) for reading operation can be made different mutually by 180 deg..

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a magnetic bubble memory device suitable for high-density and high-integration storage capacity, and particularly to the configuration of a magnetic bubble detector.

[Conventional technology]

In recent years, with the increase in density and integration of storage capacity, a magnetic bubble memory device with a so-called 0-π configuration, in which two sets of magnetic bubble memory elements are formed on one substrate to increase the capacity, has been developed, for example, in Japanese Patent Application Laid-Open No. This method has been proposed in Japanese Patent No. 57-143788 and the like.

This O-π configuration consists of two magnetic bubble memory element blocks that input and output information writing and reading for each bit, and a 0-phase block and a π
It is composed of phase blocks. This configuration has the feature that 2 bits of information can be input/output in one cycle, and information can be input/output at twice the speed.

[Problem that the invention seeks to solve]

The conventional magnetic bubble detector based on the O-π configuration method is a thin film type, which increases the manufacturing process, and since it uses a thin film, it is difficult to manufacture, and there are problems in terms of reliability. Ta.

SUMMARY OF THE INVENTION An object of the present invention is to provide a magnetic bubble memory device using a 0-π configuration method and having a bubble detector that can be easily manufactured without increasing the number of processes.

Another object of the invention is to provide reliable bubble detection ((:)
An object of the present invention is to provide a magnetic bubble memory device using an O-π configuration method.

[Means for solving problems]

According to an embodiment of the present invention, the magnetic bubble detector of the O-phase block and the magnetic bubble detector of the π-phase block are spatially reversed by 180 degrees, thereby forming a thick-film type magnetic bubble detector. A magnetic bubble memory device is provided.

[Effect]

In the present invention, since the magnetic bubble detector is arranged spatially inverted by 180 degrees between the 0-phase block and the π-phase block, the timing of reading information differs by 180 degrees, resulting in 2 bits per cycle. Information is output.

〔Example〕

Hereinafter, the present invention will be explained in detail using the drawings.

Note that in FIGS. 1 to 4, arrows in four directions (left, right, top, and bottom) indicate reference directions within the chip, and the correspondence relationships in all the figures are the same.

FIG. 3 is a block diagram of a magnetic bubble memory element CHI for explaining the magnetic bubble memory device according to the present invention. In the figure, m is a minor loop that stores information, G is a bubble generation circuit when writing information, D is a magnetic bubble detector that detects read information and converts it into an electrical signal, DM is a main detector, and DD is a dummy detector. It is a vessel.

WL is a write line that transfers write information, RL is a read line that transfers read information, WG is a write gate that transfers write information to the minor loop m, and RG is a read gate that transfers read information from the minor loop m to the read line RL. Mm is a pine loop that exclusively stores information on defective pine loops, and this pine loop Mm is also provided with a dedicated write gate MWG and read gate MRG. BP is a bonding pad as a terminal, the thick line is a conductor pattern, and the thin line is a chevron pattern transfer path that transfers magnetic bubbles as information. In the figure, the left side is the 0-phase block BRo, and the right side is the 0-phase block BRo. is the π-phase block BRπ, and 0
Magnetic bubble generator Go, Gπ and magnetic bubble detector Do,
When expressed in terms of a rotating magnetic field, the operating phases of Dπ differ by 180 degrees.

FIG. 4 is an enlarged plan view of the essential parts of the bubble expander in the magnetic bubble detector shown in FIG.
(b) shows the bubble expander part at π of the π phase detector. In the figure, S is the transfer pattern in the magnetic bubble expander, and this pattern S is the rotating magnetic field Hr
(not shown), it has the function of transferring the magnetic bubble B in the direction of the arrow P and expanding it horizontally at the same time, and is made of a soft ferromagnetic film (thickness: 3000 to 5000) such as permalloy. There is.

Generally, there are two types of magnetic bubble detectors: thick-film type and thin-film type. Both types use magnetoresistive effect in the bubble detector element that converts magnetic bubbles into electrical signals, and the above-mentioned magnetic bubble transfer It is made of a soft ferromagnetic film such as permalloy, which is the same as the wire. For the thick film type, the bubble detector element is also on the same layer as the bubble transfer path and has the same film thickness (3000 to 5000).
It is a mold that is formed all at the same time. On the other hand, the thin film type has a dedicated layer for the bubble detector element separate from the bubble transfer path layer, and its thickness is approximately 1/10 of the thickness of the bubble transfer path. It is formed.

By the way, the magnetic bubble detectors Do and Dπ based on the 0-π configuration method shown in FIG. 4 are of a thin film type.

In the figure, d, dπ are bubble detection magnetoresistive element parts, which are formed in a layer different from that of the transfer pattern S. This magnetoresistive element portion d0. In order to realize the 0-π configuration method, dπ is arranged so that the relative positions based on the transfer pattern S are approximately 1804 times different in phase between (a) and (b) in terms of a rotating magnetic field. That is, the magnetoresistive effect do is arranged on the bubble entrance side of the transfer pattern S, and the magnetoresistive element dπ is arranged on the bubble exit side of the transfer pattern S.

This results in a 180 degree difference in operation timing.

However, in the magnetic bubble memory device constructed in this manner, the magnetic bubble detectors Do and Dπ are constructed of a thin film type, which is disadvantageous in terms of the manufacturing process and the like.

Therefore, in the magnetic bubble memory device according to the 0-π configuration method according to the present invention, the magnetic bubble detectors are as shown in FIG. The arrangement is such that the two are reversed 180 degrees.

Fig. 2 is an enlarged plan view of the main parts showing details of the magnetic bubble detector shown in Fig. 1. The figure shows the bubble detector Do of the O-phase block BRo, and (b) shows the bubble detector of the π-phase block BRπ. It shows Dπ. In the figure, a bubble expansion pattern S and a bubble detection magnetoresistive element section d. , dπ are formed in opposite directions in FIG. In this case, the magnetoresistive element part d
. , dπ are of a thick film type, and are collectively formed in the same layer as the bubble expansion pattern S as part of the bubble transfer path.

According to such a configuration, the points at which the magnetic bubbles pass through the magnetoresistive element portions d, dπ differ by 180 degrees in terms of the rotating magnetic field, and as a result, the timings (phases) of read operations differ by 180 degrees from each other. can be sent.

〔Effect of the invention〕

As explained above, according to the present invention, by arranging the 0-phase block detector and the π-phase block detector so as to be reversed by 180 degrees, the magnetic bubble detector can be configured as a thick film type, and it can be easily fabricated. Extremely excellent effects can be obtained, such as making it easier to operate and realizing a highly reliable magnetic bubble detector.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a magnetic bubble memory element showing one embodiment of the magnetic bubble memory device according to the present invention, FIG. 2 is an enlarged plan view of essential parts showing the magnetic bubble detector of FIG. 1, FIG. FIG. 4 is a plan view showing a magnetic bubble memory element and its magnetic bubble detector for explaining the magnetic bubble memory device according to the present invention. CHI...magnetic bubble memory element (element), m...
Pine pullup, Mm... Pine pullup, G... Magnetic bubble generator, WL-- Write line, WG... Write gate, MWG... Map information 1F write gate, RG... Read gate, RL ...Read line, MRG...Map information reading gate, D...Magnetic bubble detector, Do...O phase detector, Dπ...π
Phase detector, d...0-phase detector element, dπ...π-phase detector element, DM...main detector, DD...dummy detector, BP...bonding parameter Figure 2) R85g Be IIIIIIIII S...Magnetic buffer expander

Claims (1)

[Claims] 1. A magnetic bubble memory element block of the O-π configuration method is formed on the substrate, and the magnetic bubble detector of the O-phase block and the magnetic bubble detector of the π-phase block are spatially reversed by 180 degrees. A magnetic bubble memory device characterized by: