JPS6364974A - Manufacture of electroconductive sialon sintered body - Google Patents
Manufacture of electroconductive sialon sintered bodyInfo
- Publication number
- JPS6364974A JPS6364974A JP61208956A JP20895686A JPS6364974A JP S6364974 A JPS6364974 A JP S6364974A JP 61208956 A JP61208956 A JP 61208956A JP 20895686 A JP20895686 A JP 20895686A JP S6364974 A JPS6364974 A JP S6364974A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- sintered body
- sialon
- tin
- sialon sintered
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000000843 powder Substances 0.000 claims description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 16
- 238000005121 nitriding Methods 0.000 claims description 7
- 238000005245 sintering Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000000465 moulding Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 229910003564 SiAlON Inorganic materials 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 238000009760 electrical discharge machining Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- BYFGZMCJNACEKR-UHFFFAOYSA-N aluminium(i) oxide Chemical compound [Al]O[Al] BYFGZMCJNACEKR-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010574 gas phase reaction Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007569 slipcasting Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Products (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、サイアロン焼結体の製造方法に関するもので
あり、特にβサイアロン相とＴｉＮ相を主体とする導電
性サイアロン焼結体の製造方法に関するものである。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for manufacturing a sialon sintered body, and particularly a method for manufacturing a conductive sialon sintered body mainly composed of a β-sialon phase and a TiN phase. It is related to.
βサイアロン焼結体は、高温強度および耐酸化性に優れ
、熱膨張係数が小さく耐熱衝撃性が非常に大きい等の利
点があるため、近年種々の分野において利用されている
。このβサイアロン焼結体は、例えば特公昭５８−１４
３９１号公報または特公昭５８−５２９４９号公報など
により知られているように、窒化ケイ素、窒化アルミニ
ウムおよびアルミナからなる第１成分と、イツトリウム
、スカンジウム、セリウム、ランタンおよびランタニド
系譜金属のうちの少なくとも１つの元素の酸化物からな
る第２成分とからなる粉末混合物を成形し、この成形体
を加圧下または非加圧下において保護雰囲気内で焼結す
ることにより得られている。β-sialon sintered bodies have been used in various fields in recent years because they have advantages such as excellent high-temperature strength and oxidation resistance, a small coefficient of thermal expansion, and very high thermal shock resistance. This β-sialon sintered body is, for example,
As is known from Japanese Patent Publication No. 391 or Japanese Patent Publication No. 58-52949, a first component consisting of silicon nitride, aluminum nitride, and alumina, and at least one of yttrium, scandium, cerium, lanthanum, and lanthanide family metals. It is obtained by molding a powder mixture consisting of a second component consisting of oxides of two elements, and sintering this molded body in a protective atmosphere with or without pressure.
しかし、βサイアロン焼結体は加工性に難点があり、通
常、ダイヤモンド砥石を用いて加工が行なわれているも
のの、加工時間及びコストが非常に大きくなるという問
題点がある。However, the β-SiAlON sintered body has difficulties in workability, and although it is usually processed using a diamond grindstone, there is a problem in that the processing time and cost are extremely large.
このため、最近、一般式Ｓ ｊ＠ −１Ａ ｌｚ Ｏｚ
Ｎ ＠−２で表わされるβサイアロンのうち、特に２
が１ないし４．２である組成物に、容量比にして１５〜
５部のｒＶａ、Ｖａ、ＶＩａ族元素の酸化物、窒化物、
炭化物、硼化物のうち１種以上の化合物および／または
５ｉＣ１Ａ１４Ｃ；より選ばれた１種以上を添加するこ
とにより導電性を付与し、放電加工を可能としたサイア
ロン焼結体を得ることが提案されている（特開昭５９−
２０７８８１号公報）。For this reason, recently the general formula S j@ -1A lz Oz
Of the β-sialons represented by N@-2, especially 2
is 1 to 4.2, and the volume ratio is 15 to 4.2.
5 parts of rVa, Va, oxides, nitrides of group VIa elements,
It has been proposed to add one or more compounds selected from carbides and borides and/or one or more selected from 5iC1A14C to obtain a sialon sintered body that imparts conductivity and enables electrical discharge machining. (Unexamined Japanese Patent Publication No. 1983-
207881).
本発明者は上記公知事実に従い、導電性を有するサイア
ロン焼結体を作製し、放電加工して複雑形状の製品を得
るべく種々実験検討を行なった結果、実用的にはより一
層放電加工性を改善し、さらに加工性に優れた焼結体を
得ることが必要であることが判明した。In accordance with the above-mentioned known facts, the present inventor prepared a conductive sialon sintered body and conducted various experiments and studies to obtain a product with a complex shape by electrical discharge machining. It has been found that it is necessary to improve the process and obtain a sintered body with excellent workability.
すなわち、上記提案による導電性サイアロンは、実施例
１．２，３に見られるように電気抵抗率がいずれの場合
とも１０−”（Ω・Ｑｌ）以上であり、放電加工は可能
であるものの加工速度が遅いとが、−室以上の厚さの焼
結体のワイヤーカットは不可能になる等の問題点がある
ことが明らかとなった。In other words, as seen in Examples 1, 2, and 3, the conductive Sialon proposed above has an electrical resistivity of 10-'' (Ω・Ql) or more in all cases, and although electrical discharge machining is possible, it is difficult to process. It has become clear that if the speed is slow, there are problems such as making it impossible to wire-cut a sintered body with a thickness greater than 100 mm.
また、上記提案によるサイアロンは実施例に見られるよ
うにホットプレス焼結を行なうことが主体となっており
、製品の形状が極めて限定されることも問題点として浮
び上がってきた。Furthermore, as seen in the examples, the SiAlON proposed above is mainly based on hot press sintering, and the problem has also emerged that the shape of the product is extremely limited.
本発明は、上記事情に鑑み、より放電加工性に優れ、か
つ本来βサイアロンが持つ耐酸化性、耐熱衝撃性等の劣
化を最小限に抑制した導電性サイアロン焼結体の製造方
法を提供とすることを目的とするものである。In view of the above circumstances, the present invention provides a method for manufacturing a conductive sialon sintered body that has better electrical discharge machinability and minimizes deterioration of the oxidation resistance, thermal shock resistance, etc. that β-sialon inherently has. The purpose is to
上記目的を達成するために本発明は、主としてＳｉ、Ｎ
４粉末、Ａｌ２Ｏ３粉末、ＡＩＮポリタイプ粉末（ＡＩ
Ｎを含む）、Ｓｉｎ、粉末および１種以上のｍａ族元素
の酸化物または窒化物粉末およびこれらに対し、２５〜
７０容量％のＴｉＮ粉末を添加し、混合、成形の後、こ
の成形体を１６００〜２０００℃において常圧または加
圧窒素中で焼結することにより、βサイアロン相および
ＴｉＮ相を主体として残部が、Ｓｉ、Ａｌ、１種以上の
ｍａ族元素、０、Ｎからなる粒界相で構成される導電性
サイアロン焼結体を得る方法において、前記ＴｉＮ粉末
がＴ ｉ Ｏ。In order to achieve the above object, the present invention mainly focuses on Si, N
4 powder, Al2O3 powder, AIN polytype powder (AI
(including N), Sin, powder, and oxide or nitride powder of one or more MA group elements, and for these,
After adding 70% by volume of TiN powder, mixing and shaping, the compact is sintered at 1,600 to 2,000°C under normal pressure or pressurized nitrogen to form a mixture consisting mainly of β-SiAlON phase and TiN phase, with the remainder being , Si, Al, one or more Ma group elements, 0, and a method for obtaining a conductive sialon sintered body comprising a grain boundary phase consisting of 0 and N, wherein the TiN powder is TiO.
を還元、窒化したものであることを特徴とする導電性サ
イアロン焼結体の製造方法である。This is a method for producing a conductive sialon sintered body, characterized in that the conductive sialon sintered body is reduced and nitrided.
１ ＴｉＮの各種類゛ 法
本製造法における最大の特徴は、ＴｉＮ粉末としてＴｉ
ｅ、を還元、窒化し製造したＴｉＮ粉末を用いることで
ある。ここでＴｉＮの製造方法として表１に記すような
各種の方法がある。大別すると、
■Ｔｉを直接窒化しＴｉＮとする、
■Ｔｉｅ、を還元、窒化する、
■Ｔ ｉ Ｈ、を窒化する、
■気相反応によりＴ ｉ Ｎとする、
の４方法に分けられる。ここで現在量産化されているプ
ロセスは、■のＴｉを直接窒化するやり方である０本発
明者は、各種プロセスにより作られたＴｉＮ粉末を集め
検討を行なった。粉末の粒子構造を第１図に示す（比表
面積も併示）、これより直接窒化法による粉末は、塊状
のものを粉砕しているため、微粒のものがかなり多く含
まれることがわかる。また、Ｔｉｅ、より還元、窒化し
たものは比表面積は、直接窒化によるものと変わらない
が、粒径がよくそろっている。一方、気相反応により作
製したものは、上記のものに比べ粒径が非常に細かく、
比表面積も約７倍となる。そこで、これらのＴ ｉ Ｎ
粉末を用い、導電性サイアロンを作製したところ、同一
の体積％を加えた場合にも電気抵抗率に大きな差が生じ
ることが判明した。1. Various types of TiN ゛ The biggest feature of this method is that TiN can be used as TiN powder.
The method is to use TiN powder produced by reducing and nitriding e. Here, there are various methods for manufacturing TiN as shown in Table 1. Broadly speaking, there are four methods: (1) directly nitriding Ti to make TiN, (2) reducing and nitriding Ti, (2) nitriding TiH, and (2) making TiN by gas phase reaction. The process that is currently being mass-produced here is the direct nitriding of Ti (2).The present inventor collected and studied TiN powder produced by various processes. The particle structure of the powder is shown in Figure 1 (the specific surface area is also shown), and it can be seen from this that the powder produced by the direct nitriding method contains a considerable amount of fine particles because the powder is pulverized in the form of lumps. In addition, the specific surface area of Tie, which is further reduced and nitrided, is the same as that of direct nitridation, but the particle size is well matched. On the other hand, those produced by gas phase reactions have much finer particle sizes than those mentioned above.
The specific surface area is also approximately 7 times larger. Therefore, these T i N
When conductive sialon was produced using the powder, it was found that there was a large difference in electrical resistivity even when the same volume % was added.
すなわち、Ｔｉｅ、の還元、窒化によるＴｉＮを用いた
場合には、直接窒化によるＴ ｉ Ｎを用いた場合に比
べ、極めて電気抵抗率が低いことが判明した。電気抵抗
率が低いほど放電加工性は良好となり、加工速度も大き
くすることができ、加工の効率が上昇する。また、同一
の電気抵抗率とするためのＴｉＮ量も少なくてすみ、耐
酸化性、耐熱衝撃性を向上することが可能となる。That is, it has been found that when TiN obtained by reduction and nitridation of Tie is used, the electrical resistivity is extremely lower than when TiN obtained by direct nitridation is used. The lower the electrical resistivity, the better the electrical discharge machinability, the higher the machining speed, and the higher the machining efficiency. In addition, the amount of TiN required to maintain the same electrical resistivity can be reduced, making it possible to improve oxidation resistance and thermal shock resistance.
ここでＴ ｉ Ｎ粉末の添加量２５〜７０容量％とする
のは、２５容量％未満では、ＴｉＮ粒子相互の接触が不
十分であり、良好な放電加工性を得られず、また抵抗率
のバラツキも大きいためであり、７０容量％を越えると
βサイアロン本来の特長である耐酸化性、高温強度等の
特性の低下が著しいからである。より好ましいＴｉＮ量
は、３０〜５０容量％である。The reason why the amount of TiN powder added is 25 to 70% by volume is because if it is less than 25% by volume, contact between TiN particles will be insufficient, good electrical discharge machinability will not be obtained, and the resistivity will decrease. This is because the variation is large, and if it exceeds 70% by volume, the characteristics inherent to β-sialon, such as oxidation resistance and high-temperature strength, are significantly reduced. A more preferable amount of TiN is 30 to 50% by volume.
なお、本発明においては、ｍａ族元素が添加されるが、
これは常圧焼結、ガス圧焼結等を可能にするためである
。ここでｍａ族元素は焼結時に液相を形成し焼結を促進
する。モしてβサイアロン中には固溶しないため、焼結
体中においては粒界相の主成分となる。このような作用
をもたらすためにはＭｇＯ等の使用も可能であるが、高
温強度を高く保持するためにはｍａ族元素が望ましい。In addition, in the present invention, a Ma group element is added,
This is to enable normal pressure sintering, gas pressure sintering, etc. Here, the Ma group elements form a liquid phase during sintering and promote sintering. Since it is not solidly dissolved in β-SiAlON, it becomes the main component of the grain boundary phase in the sintered body. Although it is possible to use MgO or the like to bring about such an effect, it is preferable to use a Ma group element in order to maintain high high-temperature strength.
なお、焼結は常圧又は加圧窒素中で１６００〜２０００
℃で行なうのが好ましい、 １６００℃未満の焼結温度
では緻密化が十分に進まず、焼結温度が２０００℃を越
える場合には高圧の窒素ガス中で焼結した場合でも焼結
体からの分解ガスの発生を完全には抑制できなくなる。In addition, sintering is performed at normal pressure or pressurized nitrogen at a temperature of 1600 to 2000
It is preferable to carry out the sintering at a temperature of 1,600°C. If the sintering temperature is less than 1,600°C, densification will not proceed sufficiently, and if the sintering temperature exceeds 2,000°C, even if sintered in high pressure nitrogen gas, the sintered body will not be sintered. The generation of decomposed gas cannot be completely suppressed.
また、ｍａ族元素の酸化物、窒化物のかわりに、焼結中
にこれら物質に変わるもの、例えばｍａ族元素の硝酸塩
、水酸化物、アルコキシド等を用いてもよい。Furthermore, instead of the oxides and nitrides of the MA group elements, substances that convert into these substances during sintering, such as nitrates, hydroxides, alkoxides, etc. of the MA group elements, may be used.
さらにまた、本発明において混合粉末を成形する際には
、射出成形、プレス、ラバープレス、スリップキャスト
等の成形方法を用いることができ、また焼結後ＨＩＰ処
理により更に特性の向上を図ったり、熱処理を行ない粒
界相を強化することも可能である。Furthermore, when molding the mixed powder in the present invention, molding methods such as injection molding, pressing, rubber pressing, and slip casting can be used, and the properties can be further improved by HIP treatment after sintering. It is also possible to perform heat treatment to strengthen the grain boundary phase.
実施例Ｉ
Ｓｉ、Ｎ、粉末（粒径０．７μ墓、α化率９３％）、Ａ
ＩＮポリタイプ粉末（結晶型２１Ｒ１粒程２μｍ、９８
．８％）、Ａｌ、Ｏ，粉末（粒度０．５ μｍ、９９．
５％）、Ｙ２Ｏ３粉末（粒径１μｍ、９９．９９％）を
用い、βサイアロンにおいてｚ ＝０．５となるように
配合した（ Ｙ ｘ Ｏｓ量は７％）。Example I Si, N, powder (particle size 0.7 μm, gelatinization rate 93%), A
IN polytype powder (crystal type 21R 1 grain size 2 μm, 98
．． 8%), Al, O, powder (particle size 0.5 μm, 99.
5%) and Y2O3 powder (particle size 1 μm, 99.99%) were blended so that z = 0.5 in β-sialon (Y x Os amount was 7%).
これに対し、製造プロセスの異なる３種類のＴ ｉ Ｎ
を３５容量％添加し、これらを混合、成形後、１７５０
℃、４時間、１気圧窒素雰囲気中で焼結した。On the other hand, three types of T i N with different manufacturing processes
After adding 35% by volume, mixing and molding, 1750
C. for 4 hours in a nitrogen atmosphere at 1 atmosphere.
得られた焼結体の電気抵抗率、密度、常温強度を 。The electrical resistivity, density, and room temperature strength of the obtained sintered body.
表２に示す。It is shown in Table 2.
表２
これらよりＴｉｅ、還元窒化によるＴｉＮを用い、ると
同量のＴｉＮを添加した場合でも電気抵抗が大きく低下
することがわかる。Table 2 From these results, it can be seen that when Tie and TiN obtained by reduction nitridation are used, the electrical resistance is greatly reduced even when the same amount of TiN is added.
実施例２
実施例１と同様の粉末を用い、ｚ ＝０．４のβサイア
ロン組成になるよう配合し、これに３１容量％の実施例
１で用いたＴ ｉ Ｎを添加した。これを混合、成形後
、１７８０℃、４時間、５気圧の窒素雰囲気中で焼結し
た。得られた焼結体の組織を第２図に示す、また、原料
粉末の比表面積、電気抵抗率を表３に示す。Example 2 Using the same powder as in Example 1, it was blended to have a β-sialon composition of z = 0.4, and 31% by volume of T i N used in Example 1 was added thereto. After mixing and shaping, the mixture was sintered at 1780° C. for 4 hours in a nitrogen atmosphere of 5 atm. The structure of the obtained sintered body is shown in FIG. 2, and the specific surface area and electrical resistivity of the raw material powder are shown in Table 3.
表３
第２図より、Ｔｉ’Ｎ原料Ａより作製した焼結体中のＴ
ｉＮの粒径は、Ｂ、Ｃより作製したものに比べ、著しく
細かいことがわかる。Table 3 From Figure 2, T in the sintered body made from Ti'N raw material A
It can be seen that the particle size of iN is significantly smaller than those made from B and C.
そして、電気抵抗率もこれに対応して著しく低くなる。Correspondingly, the electrical resistivity also becomes significantly lower.
実施例３
実施例１と同様の粉末を用い、ｚ＝０．５のβサイアロ
ン組成となるように配合し、これに２０〜７５容量％の
Ｔ ｉ Ｎ （Ａ粉末）を添加した。これを混合、成形
の後、１７５０℃、４時間、１気圧の窒素中で焼結した
０表４に焼結体の相対密度、電気抵抗率。Example 3 Using the same powder as in Example 1, it was blended to have a β-sialon composition with z=0.5, and 20 to 75% by volume of T i N (A powder) was added thereto. After mixing and molding, this was sintered at 1750°C for 4 hours in 1 atmosphere of nitrogen.Table 4 shows the relative density and electrical resistivity of the sintered body.
高温強度（１１００℃）を示す。Shows high temperature strength (1100°C).
表４
以上より、Ｓｉ、Ｎ、粉末、Ａｌ２Ｏ，粉末、Ａ Ｉ
Ｎポリタイプ粉末およびまたはＳ ｉ Ｏ、粉末および
１種以上のｍａ族元素の化合物およびこれらに対し、２
５〜７０容量％のＴｉＮ粉末を添加し、混合、成形。Table 4 From the above, Si, N, powder, Al2O, powder, A I
N polytype powder and or S i O, powder and compound of one or more ma group elements and for these, 2
Add 5-70% by volume of TiN powder, mix and mold.
焼結して導電性サイアロン焼結体を得る製造方法におい
て、Ｔ ｉ Ｏ，を還元したＴｉＮ粉末より作られたＴ
ｉＮを用いることにより電気抵抗率が低く、機械的性質
の優れた導電性サイアロン焼結体が得られることがわか
る。In a manufacturing method for obtaining a conductive sialon sintered body by sintering, T
It can be seen that by using iN, a conductive sialon sintered body with low electrical resistivity and excellent mechanical properties can be obtained.
本発明により、放電加工性に優れ、かつ本来のβサイア
ロンが持つ耐酸化性、耐熱衝撃性等の劣化を最小限に抑
制した導電性サイアロン焼結体の製造が可能となる。こ
れにより、従来のサイアロンでは不可能であった複雑形
状の穴加工等が可能となり、ダイス、構造用部材等とし
ての応用範囲が拡がる他、導電性を利用したヒーター等
の分野ヘサイアロンを適用することが可能となる。According to the present invention, it is possible to produce a conductive sialon sintered body that has excellent electrical discharge machinability and minimizes deterioration of the oxidation resistance, thermal shock resistance, etc. of the original β-sialon. This makes it possible to drill holes with complex shapes that were impossible with conventional Sialons, expanding the range of applications for dies, structural members, etc., and also allowing SiAlons to be applied to fields such as heaters that utilize conductivity. becomes possible.
第１図は各種プロセスにより作られたＴ ｉ Ｎ粉末の
粒子構造を示す顕微鏡写真、第２図はＴ ｉ Ｎ粉末Ａ
、Ｂ、Ｃを原料として作られた焼結体のミクロ組織を示
す顕微鏡写真である。
第 】 図
２、＆餐／＠ Ｘ ６ＱＯ０１，’れＦｉｔｄ／ｇ Ｘ
ＢＣ＋＋）０第 ２ 図
Ａ Ｘ ２００ＧFigure 1 is a micrograph showing the particle structure of T i N powder made by various processes, and Figure 2 is T i N powder A.
, B, and C are micrographs showing the microstructures of sintered bodies made from raw materials. ] Figure 2, & Dinner/@X 6QO01,'ReFitd/g X
BC++)0 2nd figure A X 200G
Claims (1)
粉末を用いることを特徴とする、導電相がＴｉＮ相であ
る導電性サイアロン焼結体の製造方法。TiN obtained by reducing and nitriding TiO_2
A method for producing a conductive sialon sintered body whose conductive phase is a TiN phase, the method comprising using powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208956A JPS6364974A (en) | 1986-09-05 | 1986-09-05 | Manufacture of electroconductive sialon sintered body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61208956A JPS6364974A (en) | 1986-09-05 | 1986-09-05 | Manufacture of electroconductive sialon sintered body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6364974A true JPS6364974A (en) | 1988-03-23 |
| JPH0424308B2 JPH0424308B2 (en) | 1992-04-24 |
Family
ID=16564932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61208956A Granted JPS6364974A (en) | 1986-09-05 | 1986-09-05 | Manufacture of electroconductive sialon sintered body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6364974A (en) |
-
1986
- 1986-09-05 JP JP61208956A patent/JPS6364974A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0424308B2 (en) | 1992-04-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0925166A (en) | Aluminum nitride sintered compact and its production | |
| JPS61111970A (en) | Silicon nitride sintered body and manufacture | |
| JPS59207881A (en) | Ceramic sintered body and manufacture | |
| JPS6364974A (en) | Manufacture of electroconductive sialon sintered body | |
| JPH07172921A (en) | Aluminum nitride sintered material and its production | |
| JPS6364975A (en) | Manufacture of electroconductive sialon sintered body | |
| JPS5891065A (en) | Manufacture of silicon carbide ceramic sintered body | |
| JPS59190268A (en) | Silicon carbide sintered body | |
| JP2631115B2 (en) | Manufacturing method of silicon nitride sintered body | |
| JP4301617B2 (en) | Method for manufacturing aluminum nitride sintered body for DBC circuit board and method for manufacturing DBC circuit board | |
| JPH0477699B2 (en) | ||
| JPH0380750B2 (en) | ||
| JPH01153574A (en) | Sintered material of electrically conductive sialon | |
| JPH0283265A (en) | Production of silicon nitride | |
| JPH08319168A (en) | Production of sialon ceramic | |
| JPS60239360A (en) | Silicon carbide ceramic sintered body | |
| JPH0840776A (en) | Sintered substance based on si3n4/bn and their production | |
| JPS6126566A (en) | Method of sintering sic composite body | |
| JP2571303B2 (en) | Silicon carbide sintered body and method for producing the same | |
| JPH05279130A (en) | Silicon carbide-silicon nitride composite material and its production | |
| JPS6230665A (en) | High temperature strength sintered body | |
| JPH02157169A (en) | Electrical conductive sialon sintered body, production thereof and die for drawing | |
| JPS62288166A (en) | Manufacture of tungsten carbide-oxide composite sintered body | |
| JP2817908B2 (en) | Method for producing silicon oxynitride-based ceramics having hot workability | |
| JPH01179761A (en) | Conductive silicon nitride sintered body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |